14
T. Onishi
H
OH
rotation
Diagonal
conduction
Protonpumping
OHO covalent bonding
at diagonal centre
OH covalent bonding
at lattice position
Fig. 1.14 Schematic figure of proton-conduction within Al 4 O 4 square in LaAlO 3 perovskite.
(Reprinted by permission from Springer Nature Singapore Pte Ltd., [17], COPYRIGHT (2018).
Black and white circles denote aluminium and oxygen, respectively)
Fig. 1.15 Schematic figure of nanoscale hydrogen release from perovskite hydride. Blue, black
and grey spheres denote hydrogen, magnesium and potassium atoms, respectively
1.5.2 Perovskite for Next Generation Electronic Device
1.5.2.1 Ferroelectric Perovskite
Ferroelectric can be applicable to high-performance memory. It is well known that
perovskite titanium oxides such as BaTiO 3 and PbTiO 3 exhibit ferroelectricity [51].
The direction of a nanoscale spontaneous electric polarisation is changeable by
applying electric field. As shown in Fig. 1.16, electric polarisation can be reversed
by applying an opposite electric field. In present, PbZr x Ti 1–x O 3 perovskite has been
widely utilised as raw material of ferroelectric random access memory (FeRAM).
T. Onishi
H
OH
rotation
Diagonal
conduction
Protonpumping
OHO covalent bonding
at diagonal centre
OH covalent bonding
at lattice position
Fig. 1.14 Schematic figure of proton-conduction within Al 4 O 4 square in LaAlO 3 perovskite.
(Reprinted by permission from Springer Nature Singapore Pte Ltd., [17], COPYRIGHT (2018).
Black and white circles denote aluminium and oxygen, respectively)
Fig. 1.15 Schematic figure of nanoscale hydrogen release from perovskite hydride. Blue, black
and grey spheres denote hydrogen, magnesium and potassium atoms, respectively
1.5.2 Perovskite for Next Generation Electronic Device
1.5.2.1 Ferroelectric Perovskite
Ferroelectric can be applicable to high-performance memory. It is well known that
perovskite titanium oxides such as BaTiO 3 and PbTiO 3 exhibit ferroelectricity [51].
The direction of a nanoscale spontaneous electric polarisation is changeable by
applying electric field. As shown in Fig. 1.16, electric polarisation can be reversed
by applying an opposite electric field. In present, PbZr x Ti 1–x O 3 perovskite has been
widely utilised as raw material of ferroelectric random access memory (FeRAM).