525
Index
R
Radio frequency (RF), 1, 261
applications, modeling parasitic
elements for, 279–283
Random discrete doping (RDD),
287–290, 299, 308–309, 314–315
Random process variability, 287
RDD, See Random discrete doping (RDD)
Recombination centers, 42
Regional drain current model, 150–171
bulk-charge model, 160–161
core model, 152–160
limitations, 169–171
square root approximation of bulkcharge model, 161–163
subthreshold region, 163–169
Resistance
bulk, 71
energy losses in, 3
series, 71f, 332
sheet, 34–35
Reverse characteristics of real
pn-junction, 70f
Reverse SCE (RSCE), 15
S
Saturation drain current (I dsat ), 155
Saturation velocity, temperature
dependence of, 209
Saturation voltage (V dsa ), 155
SC, See Structural confinement (SC)
Scaling rule, 316–317
SCBE, See Substrate current–induced
body effect (SCBE)
Schematic 2D cross section of n-channel
MOSFET, 136f
Schematic diagram of nMOSFET device,
139f, 156f
Schichmann and Hodges model, 6
Schrödinger–Poisson approach, 331
Screening length, 349–350
S/D (source-drain) parasitic series
resistance, 205
temperature dependence of, 209
Semiconductor
bandgap in, 41f
carrier transport in, 31–39
current continuity in, 50f
dynamic characteristics of, 139–140
effect of band bending on, 93–94
electrical properties of, 21
energy band diagram of, 21f
equations, 44–51
Fermi–Dirac (F–D) distribution
functions, 22f
Fermi level in degenerately doped,
30–31
field distributions in, 50
indirect bandgap, 41f, 42
induced charge in, 107
industry, 287
Maxwell–Boltzmann (M–B)
distribution functions, 22f
nonuniformly doped, 38–39
physics, 19–20
resistivity of, 33
Series resistance, 71f, 332
S-factor, 168
Shallow trench isolation (STI),
132, 133f, 187
Sheet resistance, 34–35
Shockley–Read–Hall (SRH), 43
theory of generation and
recombination, 68
Short channel capacitance model, 250
Short channel charge model, 248–250
Short channel effects (SCEs), 3, 183, 313,
329–330
Silicon
effective mass ratio for, 26t
electron and hole mobilities in, 32f
Poisson’s equation for, 45
surface and bulk impact ionization
coefficients in, 213t
Silicon dioxide (SiO 2 ), 83
energy band diagram for, 85f
Silicon-on-insulator (SOI), 9, 313, 315, 317
Simulation Program with Integrated
Circuit Emphasis (SPICE), 4,
153, 229
Level 1 model, 160
Simulation Program with Integrated
Circuit Emphasis (SPICE2)
model, 161, 264
Small signal dynamic model, 225
Smart cut, 317
Index
R
Radio frequency (RF), 1, 261
applications, modeling parasitic
elements for, 279–283
Random discrete doping (RDD),
287–290, 299, 308–309, 314–315
Random process variability, 287
RDD, See Random discrete doping (RDD)
Recombination centers, 42
Regional drain current model, 150–171
bulk-charge model, 160–161
core model, 152–160
limitations, 169–171
square root approximation of bulkcharge model, 161–163
subthreshold region, 163–169
Resistance
bulk, 71
energy losses in, 3
series, 71f, 332
sheet, 34–35
Reverse characteristics of real
pn-junction, 70f
Reverse SCE (RSCE), 15
S
Saturation drain current (I dsat ), 155
Saturation velocity, temperature
dependence of, 209
Saturation voltage (V dsa ), 155
SC, See Structural confinement (SC)
Scaling rule, 316–317
SCBE, See Substrate current–induced
body effect (SCBE)
Schematic 2D cross section of n-channel
MOSFET, 136f
Schematic diagram of nMOSFET device,
139f, 156f
Schichmann and Hodges model, 6
Schrödinger–Poisson approach, 331
Screening length, 349–350
S/D (source-drain) parasitic series
resistance, 205
temperature dependence of, 209
Semiconductor
bandgap in, 41f
carrier transport in, 31–39
current continuity in, 50f
dynamic characteristics of, 139–140
effect of band bending on, 93–94
electrical properties of, 21
energy band diagram of, 21f
equations, 44–51
Fermi–Dirac (F–D) distribution
functions, 22f
Fermi level in degenerately doped,
30–31
field distributions in, 50
indirect bandgap, 41f, 42
induced charge in, 107
industry, 287
Maxwell–Boltzmann (M–B)
distribution functions, 22f
nonuniformly doped, 38–39
physics, 19–20
resistivity of, 33
Series resistance, 71f, 332
S-factor, 168
Shallow trench isolation (STI),
132, 133f, 187
Sheet resistance, 34–35
Shockley–Read–Hall (SRH), 43
theory of generation and
recombination, 68
Short channel capacitance model, 250
Short channel charge model, 248–250
Short channel effects (SCEs), 3, 183, 313,
329–330
Silicon
effective mass ratio for, 26t
electron and hole mobilities in, 32f
Poisson’s equation for, 45
surface and bulk impact ionization
coefficients in, 213t
Silicon dioxide (SiO 2 ), 83
energy band diagram for, 85f
Silicon-on-insulator (SOI), 9, 313, 315, 317
Simulation Program with Integrated
Circuit Emphasis (SPICE), 4,
153, 229
Level 1 model, 160
Simulation Program with Integrated
Circuit Emphasis (SPICE2)
model, 161, 264
Small signal dynamic model, 225
Smart cut, 317