524
Index
npn-BJT transistor (Continued)
operation, 375f
parasitic series resistances, 387f
small signal model, 384f
structure for modeling early effect, 396f
transport version of Ebers–Moll
model, 381f
used to derive basic Ebers–Moll
model, 378f
n-type material, 26
n-type TFET (nTFET), 344, 359
NWE, See Narrow width effect (NWE)
O
One-sided step junction, 59–60
OTV, See Oxide thickness variation
(OTV)
Output characteristics, MOSFET, 203f
Output resistance (R out ), 202–204
Oxide charges, 89–91
fixed-oxide, 90–91
interface-trapped, 90
mobile ionic, 91
oxide-trapped, 91
Oxide thickness variation (OTV), 287,
290–291
Oxide-trapped charge, 91
P
Pao-Sah model, 5, 144–146
p-channel MOSFETs (pMOSFETs), 160,
179
PDF, See Probability distribution
function (PDF)
Pelgrom plot, 292, 303
Performance-aware model (PAM) cards,
296
Phonon scattering, 192, 194
Piece-wise multisectional model, 150
Pinched-off channel, 271
Pinch-off voltage, 155
p-i-n TFET, 344f, 347f, 350, 351f, 352, 358
pn-junction, 51, 51f
analysis of, 54
applied bias in, 64f
charge condition under depletion
approximation, 55f
current equation, 67–70
current voltage characteristics of, 67f
depletion approximation of, 57f
diode, 51
distribution of carriers n-region of, 64f
dynamic behavior, 73–77
energy band diagram of, 53f
equations, 60–65
in equilibrium, 59f
equivalent circuit for, 78f
under external bias, 58–60, 59f
features of, 51–53
forward characteristics of real, 68f
I–V characteristics of, 65–72, 67f
potential, 55–58
reverse characteristics of real, 70f
reverse (or leakage) current, 71
small signal behavior of, 77
types of stored charge in, 73
pnp-BJT transistor, 372
Pocket doping, nonuniform lateral
channel doping profile due
to, 181f
Point swing, 354
Poisson-carrier transport (core CMG
model)
drain current model, 325–328
electrostatics, 318–324
Poisson’s drift/diffusion equations, 318,
320, 333
Poisson’s equation, 5, 14, 44–45
formulation of, 100–103
Polysilicon gate depletion, 205–208
Power spectral density (PSD), 262
Probability distribution function
(PDF), 304
PSD, See Power spectral density (PSD)
p-type TFET (pTFET), 344, 356
Q
Quantum mechanical effects (QMEs), 3,
330–331
Quantum mechanics (QM), 20, 113–114
Quasi-Fermi level, 48, 269
Quasistatic (QS) assumption, 225, 261
two-dimensional (2D) numerical
simulation, 274
Quasistatic model, 228, 254–255
Index
npn-BJT transistor (Continued)
operation, 375f
parasitic series resistances, 387f
small signal model, 384f
structure for modeling early effect, 396f
transport version of Ebers–Moll
model, 381f
used to derive basic Ebers–Moll
model, 378f
n-type material, 26
n-type TFET (nTFET), 344, 359
NWE, See Narrow width effect (NWE)
O
One-sided step junction, 59–60
OTV, See Oxide thickness variation
(OTV)
Output characteristics, MOSFET, 203f
Output resistance (R out ), 202–204
Oxide charges, 89–91
fixed-oxide, 90–91
interface-trapped, 90
mobile ionic, 91
oxide-trapped, 91
Oxide thickness variation (OTV), 287,
290–291
Oxide-trapped charge, 91
P
Pao-Sah model, 5, 144–146
p-channel MOSFETs (pMOSFETs), 160,
179
PDF, See Probability distribution
function (PDF)
Pelgrom plot, 292, 303
Performance-aware model (PAM) cards,
296
Phonon scattering, 192, 194
Piece-wise multisectional model, 150
Pinched-off channel, 271
Pinch-off voltage, 155
p-i-n TFET, 344f, 347f, 350, 351f, 352, 358
pn-junction, 51, 51f
analysis of, 54
applied bias in, 64f
charge condition under depletion
approximation, 55f
current equation, 67–70
current voltage characteristics of, 67f
depletion approximation of, 57f
diode, 51
distribution of carriers n-region of, 64f
dynamic behavior, 73–77
energy band diagram of, 53f
equations, 60–65
in equilibrium, 59f
equivalent circuit for, 78f
under external bias, 58–60, 59f
features of, 51–53
forward characteristics of real, 68f
I–V characteristics of, 65–72, 67f
potential, 55–58
reverse characteristics of real, 70f
reverse (or leakage) current, 71
small signal behavior of, 77
types of stored charge in, 73
pnp-BJT transistor, 372
Pocket doping, nonuniform lateral
channel doping profile due
to, 181f
Point swing, 354
Poisson-carrier transport (core CMG
model)
drain current model, 325–328
electrostatics, 318–324
Poisson’s drift/diffusion equations, 318,
320, 333
Poisson’s equation, 5, 14, 44–45
formulation of, 100–103
Polysilicon gate depletion, 205–208
Power spectral density (PSD), 262
Probability distribution function
(PDF), 304
PSD, See Power spectral density (PSD)
p-type TFET (pTFET), 344, 356
Q
Quantum mechanical effects (QMEs), 3,
330–331
Quantum mechanics (QM), 20, 113–114
Quasi-Fermi level, 48, 269
Quasistatic (QS) assumption, 225, 261
two-dimensional (2D) numerical
simulation, 274
Quasistatic model, 228, 254–255