523
Index
Mobile ionic charge, 91
Mobility degradation, 331–332
Mobility fluctuation model, 266
Model card
definition of different parameters
and functions, 435t
generate, 434–435
model usage, 436–437
model validation, 436
Modeling
base-width modulation and highlevel injection, 395–412
carrier recombination in depletion
regions, 394–395
channel transports using drain
mosfet, 364–366
channel transports using source
resistance, 366–367
mismatch, 433–434
modeling NQS effect in MOSFET,
275–279
parasitic circuit elements, 385–392
statistical compact, 297–308
systematic process variability,
430–433
Model parameters for MOS level 1
compact model, 160t
Moderate inversion, 149
region, 109, 170–171
Monte Carlo (MC)
simulation, 304, 308f
statistical modeling, 433
Moore’s law, 313
MOS capacitor theory, 136
MOSFETs, See Metal-oxidesemiconductor field–effect
transistors (MOSFETs)
MOS structure, capacitance of, 114–123
Multigate device structures
bulk-multigate, 314–317
UTB-SOI, 317–318
Multigate structure, 315
N
Narrow channel effect in MOSFETs,
186f
Narrow width effect (NWE), 183
Natural length, 350
N-channel MOSFETs (nMOSFETs)
I ds – V ds characteristics of, 159f
n-channel MOSFETs (nMOSFETs),
138, 179
channel hot electrons in, 210f
charge distribution in, 206f
cross section of, 211f
current voltage characteristics
of, 158f
depletion region widening
at drain end of channel
of, 161f
energy band diagram of, 142f
hot carrier current effect in, 213f
hot carrier effect in, 213f
I ds versus V gs characteristics of, 219f
induced substrate current I sub versus
gate voltage V gs , 216f
schematic diagram of, 139f, 156f
universal mobility behavior of
inversion layer electrons
in, 193f
Negative differential resistance
(NDR), 346
NFACTOR, 197
NMOS device characteristics, 427f
Noise description, 261
Noise models, MOSFETs, 261–273
flicker noise, 265–273
fundamental sources, 262
thermal noise, 262–265
Nonlinear hybrid-π model, 381
Non-quasistatic (NQS)
analysis, 255
effect, 3, 261, 274–279
Nonuniform doping effects, 3
npn-BJT transistor, 372, 374
basic Ebers–Moll model for, 378f
basic feature of, 373f
biasing condition of, 375f
components of base charge, 403f
equivalent circuit of enhanced
vertical, 386f
four different regions operation
of, 376f
Gummel plot, 393, 393f
layout of vertical, 374f
nonlinear hybrid-π EM1
model, 382f
Index
Mobile ionic charge, 91
Mobility degradation, 331–332
Mobility fluctuation model, 266
Model card
definition of different parameters
and functions, 435t
generate, 434–435
model usage, 436–437
model validation, 436
Modeling
base-width modulation and highlevel injection, 395–412
carrier recombination in depletion
regions, 394–395
channel transports using drain
mosfet, 364–366
channel transports using source
resistance, 366–367
mismatch, 433–434
modeling NQS effect in MOSFET,
275–279
parasitic circuit elements, 385–392
statistical compact, 297–308
systematic process variability,
430–433
Model parameters for MOS level 1
compact model, 160t
Moderate inversion, 149
region, 109, 170–171
Monte Carlo (MC)
simulation, 304, 308f
statistical modeling, 433
Moore’s law, 313
MOS capacitor theory, 136
MOSFETs, See Metal-oxidesemiconductor field–effect
transistors (MOSFETs)
MOS structure, capacitance of, 114–123
Multigate device structures
bulk-multigate, 314–317
UTB-SOI, 317–318
Multigate structure, 315
N
Narrow channel effect in MOSFETs,
186f
Narrow width effect (NWE), 183
Natural length, 350
N-channel MOSFETs (nMOSFETs)
I ds – V ds characteristics of, 159f
n-channel MOSFETs (nMOSFETs),
138, 179
channel hot electrons in, 210f
charge distribution in, 206f
cross section of, 211f
current voltage characteristics
of, 158f
depletion region widening
at drain end of channel
of, 161f
energy band diagram of, 142f
hot carrier current effect in, 213f
hot carrier effect in, 213f
I ds versus V gs characteristics of, 219f
induced substrate current I sub versus
gate voltage V gs , 216f
schematic diagram of, 139f, 156f
universal mobility behavior of
inversion layer electrons
in, 193f
Negative differential resistance
(NDR), 346
NFACTOR, 197
NMOS device characteristics, 427f
Noise description, 261
Noise models, MOSFETs, 261–273
flicker noise, 265–273
fundamental sources, 262
thermal noise, 262–265
Nonlinear hybrid-π model, 381
Non-quasistatic (NQS)
analysis, 255
effect, 3, 261, 274–279
Nonuniform doping effects, 3
npn-BJT transistor, 372, 374
basic Ebers–Moll model for, 378f
basic feature of, 373f
biasing condition of, 375f
components of base charge, 403f
equivalent circuit of enhanced
vertical, 386f
four different regions operation
of, 376f
Gummel plot, 393, 393f
layout of vertical, 374f
nonlinear hybrid-π EM1
model, 382f