522
Index
Metal-oxide-semiconductor fieldeffect transistors (MOSFETs),
(Continued)
characteristics of, 138
characterization of parametric
variability, 291–293
charge-based capacitance model, 237
charge-based compact models, 7,
12–14
compact models for small geometry,
175–221
Complete equivalent circuit, 236f
complexities of, 7
2D cross section of, 177f
2D cross section of n-channel, 136f
design theory of, 4
determination of process variabilitysensitive, 298–301
device selection criteria, 425f
different components of gate overlap
capacitance, 251f
double integral model for, 145
drain (d), 131
drain current model, 138–171
effective vertical electric field on, 191f
effect of nonuniform channel doping
profile on, 178f
Elmore’s equivalent circuit, 278f
flicker characteristics of nMOSFET
and pMOSFET, 272f
four-terminal of, 132
gain factor of, 153
GIDL current in, 218f
history of, 4–7
hot carrier effect in, 210f
ideal structure of four-terminal, 133f
intrinsic capacitances, 238
I–V and C–V behavior of, 2
Log (I ds ) versus V gs characteristics
of, 168f
low field mobility of inversion
carriers in, 193f
measured and simulated tunneling
currents in, 220f
modeling efective gate resistance for
RF analysis, 281f
modeling of, 140
narrow channel effect in, 186f
noise models, 261–273
noise spectra of nMOSFET and
pMOSFET, 273f
nonreciprocal effect, 237
nonuniform vertical channel doping
profile of, 179f
NQS effect, 274–279
operation, 135
output characteristics, 203f
output characteristics of, 158f
overview of, 132–135
Pao-Sah model for, 145
plots for, 217f
pn-junctions, 371
QM effects in, 10
quasistatic operation, 227
for RF analysis, 279f, 283f
RF model for GHz applications, 283
schematic circuit element, 227f
short channel effect in, 184f, 185f
small signal equivalent circuit
model, 273f
source(s), 131
square law model, 157
subthreshold slope degradation,
329–330
surface potential–based, 7, 9–12
threshold voltage-based, 7–9
threshold voltage model, 135–138
total drain current in, 147
trans-capacitances, 238
transisent and small signal
equivalent circuit model, 276f
two-dimensional (2D) cross section
of, 186f
velocity saturation in, 196
VLSI circuits consist of, 3
Metal-oxide-semiconductor (MOS)
transistor, evolution of, 6
Meyer model
limitations, 236–237
simple equivalent circuit, 236f
Simulation Program with Integrated
Circuit Emphasis (SPICE), 229
strong inversion, 231–233
three lumped capacitances, 229–230
weak inversion, 234–236
Miller effect, 247
Mismatch coefficient, 292
Mismatch modeling, 433–434
Index
Metal-oxide-semiconductor fieldeffect transistors (MOSFETs),
(Continued)
characteristics of, 138
characterization of parametric
variability, 291–293
charge-based capacitance model, 237
charge-based compact models, 7,
12–14
compact models for small geometry,
175–221
Complete equivalent circuit, 236f
complexities of, 7
2D cross section of, 177f
2D cross section of n-channel, 136f
design theory of, 4
determination of process variabilitysensitive, 298–301
device selection criteria, 425f
different components of gate overlap
capacitance, 251f
double integral model for, 145
drain (d), 131
drain current model, 138–171
effective vertical electric field on, 191f
effect of nonuniform channel doping
profile on, 178f
Elmore’s equivalent circuit, 278f
flicker characteristics of nMOSFET
and pMOSFET, 272f
four-terminal of, 132
gain factor of, 153
GIDL current in, 218f
history of, 4–7
hot carrier effect in, 210f
ideal structure of four-terminal, 133f
intrinsic capacitances, 238
I–V and C–V behavior of, 2
Log (I ds ) versus V gs characteristics
of, 168f
low field mobility of inversion
carriers in, 193f
measured and simulated tunneling
currents in, 220f
modeling efective gate resistance for
RF analysis, 281f
modeling of, 140
narrow channel effect in, 186f
noise models, 261–273
noise spectra of nMOSFET and
pMOSFET, 273f
nonreciprocal effect, 237
nonuniform vertical channel doping
profile of, 179f
NQS effect, 274–279
operation, 135
output characteristics, 203f
output characteristics of, 158f
overview of, 132–135
Pao-Sah model for, 145
plots for, 217f
pn-junctions, 371
QM effects in, 10
quasistatic operation, 227
for RF analysis, 279f, 283f
RF model for GHz applications, 283
schematic circuit element, 227f
short channel effect in, 184f, 185f
small signal equivalent circuit
model, 273f
source(s), 131
square law model, 157
subthreshold slope degradation,
329–330
surface potential–based, 7, 9–12
threshold voltage-based, 7–9
threshold voltage model, 135–138
total drain current in, 147
trans-capacitances, 238
transisent and small signal
equivalent circuit model, 276f
two-dimensional (2D) cross section
of, 186f
velocity saturation in, 196
VLSI circuits consist of, 3
Metal-oxide-semiconductor (MOS)
transistor, evolution of, 6
Meyer model
limitations, 236–237
simple equivalent circuit, 236f
Simulation Program with Integrated
Circuit Emphasis (SPICE), 229
strong inversion, 231–233
three lumped capacitances, 229–230
weak inversion, 234–236
Miller effect, 247
Mismatch coefficient, 292
Mismatch modeling, 433–434