521
Index
J
Junction capacitance, 73–76
of typical pn-junction, 75f
L
Large-signal model, 77
Lateral BJTs, 372
LDCM, See Location depth corner
modeling (LDCM)
LDD, See Lightly doped drain (LDD)
Leakage current, 70–71
Length
Debye, 350
natural, 350
screening, 349–350
LER, See Line–edge roughness (LER)
Lightly doped drain (LDD), 214, 250
Linear hybrid-π small signal model,
382–385
input resistance, 383–384
output resistance, 384–385
Linear region operation, 154
Line-edge roughness (LER), 287, 290
Line-width roughness (LWR), 287
Local oxidation of silicon (LOCOS)
isolation process, 186–187
in CMOS technology, 186f
Local process variability, 287, 298–299,
301–303
Location depth corner modeling
(LDCM), 296
Long channel capacitance model,
246–247
Long channel charge model, 241–246
accumulation, 246
strong inversion, 241–244
weak inversion, 244–246
Lower limit (LL) values, 294–295
Low field mobility
degradation, 332
of inversion carriers
in MOSFETs, 193f
model, 196
Low-frequency noise, 266
Low-level avalanche current, 212
Low-level injection, 40
LWR, See Line–width roughness (LWR)
M
Majority carrier distribution tails or
spillover, 60f
Mathiessen’s rule, 32
Maxwell–Boltzmann (M–B) distribution
functions, 22f
Maxwell’s field equation, 44
Metal-oxide-semiconductor (MOS)
capacitor system, 83, 93f, 236
under applied bias, 94–99
applied gate bias V g , 94f
applied gate voltage, V g = 0, 87f
band bending of, 87f
band structure for, 89f
basic characteristics of, 114
behavior of, 84
C–V characteristics of ideal, 120f
depletion, 105–107
different regimes of, 105f
effect of applied voltage, 96f, 97f, 98f
energy band diagram of three
separate materials form, 85f
equilibrium, 83–94
equilibrium band structure of a
p-type, 101f
extrinsic capacitances, 226
individual component of total, 115f
intrinsic capacitances, 226
inversion, 107–114
low frequency (LF) C–V
characteristics of, 115–119, 122f
polysilicon depletion effect in, 122f
structure, 114–123
surface potential versus gate voltage
for, 111f
theory, 99–114
two-dimensional (2D) cross section
of ideal, 84f
Metal-oxide-semiconductor field-effect
transistors (MOSFETs), 1, 225,
261, 285, 343, 371, 423
accumulation region, 246
advanced compact, 13
basic features of, 133–134, 134f
basic theory of, 132
Boltzmann distribution, 352
bulk-charge effect in, 162
capacitance model, 226–237, 226f
Index
J
Junction capacitance, 73–76
of typical pn-junction, 75f
L
Large-signal model, 77
Lateral BJTs, 372
LDCM, See Location depth corner
modeling (LDCM)
LDD, See Lightly doped drain (LDD)
Leakage current, 70–71
Length
Debye, 350
natural, 350
screening, 349–350
LER, See Line–edge roughness (LER)
Lightly doped drain (LDD), 214, 250
Linear hybrid-π small signal model,
382–385
input resistance, 383–384
output resistance, 384–385
Linear region operation, 154
Line-edge roughness (LER), 287, 290
Line-width roughness (LWR), 287
Local oxidation of silicon (LOCOS)
isolation process, 186–187
in CMOS technology, 186f
Local process variability, 287, 298–299,
301–303
Location depth corner modeling
(LDCM), 296
Long channel capacitance model,
246–247
Long channel charge model, 241–246
accumulation, 246
strong inversion, 241–244
weak inversion, 244–246
Lower limit (LL) values, 294–295
Low field mobility
degradation, 332
of inversion carriers
in MOSFETs, 193f
model, 196
Low-frequency noise, 266
Low-level avalanche current, 212
Low-level injection, 40
LWR, See Line–width roughness (LWR)
M
Majority carrier distribution tails or
spillover, 60f
Mathiessen’s rule, 32
Maxwell–Boltzmann (M–B) distribution
functions, 22f
Maxwell’s field equation, 44
Metal-oxide-semiconductor (MOS)
capacitor system, 83, 93f, 236
under applied bias, 94–99
applied gate bias V g , 94f
applied gate voltage, V g = 0, 87f
band bending of, 87f
band structure for, 89f
basic characteristics of, 114
behavior of, 84
C–V characteristics of ideal, 120f
depletion, 105–107
different regimes of, 105f
effect of applied voltage, 96f, 97f, 98f
energy band diagram of three
separate materials form, 85f
equilibrium, 83–94
equilibrium band structure of a
p-type, 101f
extrinsic capacitances, 226
individual component of total, 115f
intrinsic capacitances, 226
inversion, 107–114
low frequency (LF) C–V
characteristics of, 115–119, 122f
polysilicon depletion effect in, 122f
structure, 114–123
surface potential versus gate voltage
for, 111f
theory, 99–114
two-dimensional (2D) cross section
of ideal, 84f
Metal-oxide-semiconductor field-effect
transistors (MOSFETs), 1, 225,
261, 285, 343, 371, 423
accumulation region, 246
advanced compact, 13
basic features of, 133–134, 134f
basic theory of, 132
Boltzmann distribution, 352
bulk-charge effect in, 162
capacitance model, 226–237, 226f