520
Index
Gate resistance, modeling, 279–282
Gate voltage, 168
Gauss’s law, 5, 45, 322
GCA, See Gradual channel
approximation (GCA)
Generation and recombination
in an indirect bandgap
semiconductor, 42f
GHz applications, MOSFET RF model
for, 283
GIDL, See Gate-induced drain leakage
(GIDL)
GISL, See Gate-induced source leakage
(GISL)
Global process variability, 286–287, 286f
GNR, See Graphene nanoribbons
(GNR)
Golden
die, 426
wafer, 426
Gradual channel approximation (GCA),
136, 318
Graphene nanoribbons (GNR), 357
Green IC technology, 343
Gummel plot, 393, 393f
Gummel–Poon (GP) model, 4
H
Halo doping, 177f, 180
nonuniform lateral channel doping
profile due to, 181f
High frequency (HF)
C–V characteristics, 119
C–V plot, 119
High-level injection, 40, 395–412
Hiroshima University STARC IGFET
Model (HiSIM), 149
Hooge’s empirical relation, 266
Hot carrier current effect in nMOSFETs,
213f
Hot carrier effect
in MOSFETs, 210f
in nMOSFETs, 213f
Hot electrons, 210
Householder’s method, 324, 334
HSPICE circuit computer-aided design
(CAD), 423
I
ICs, See Integrated circuits (ICs)
Ideal drain current model, 361–364
Ideality factor, 69
Ideal MOSFET device structure, 133f
Ihantola–Moll model, 161
Impact ionization, 175
coefficients, 212
Impurities, types of, 26
Indefinite admittance matrix, 238
Independent multigate
C–V model, 338–340
FET model, 332–336
Independent multigate (IMG), 318
Indirect bandgap semiconductors,
41f, 42
Indirect recombination process,
42, 43f
Induced charge density, variation
of, 105f
Inductance (L), 3
Integrated circuits (ICs), 251, 286, 343,
371, 424
analysis of, 1
invention of, 1
technology for, work functions
of commonly used gate
material, 87t
transistors, 19
Inter-die process variability, 286
Interface states, 90
Interface-trapped charge, 90
International Technology Roadmap for
Semiconductors, 288
Intra-die process variability, 287
Intrinsic capacitance model,
238, 336
Intrinsic energy level, 24
Intrinsic Fermi level, 24, 44
Intrinsic process variability, 285
Intrinsic semiconductors, 23–26
Inverse early voltage, 405
Inversion charge density, 160–161
Inversion condition, 98, 98f
Inversion layer quantization, 113f
Ionized impurity scattering, 192
IR drop, 3
I–V (current-voltage) relation, 299
Index
Gate resistance, modeling, 279–282
Gate voltage, 168
Gauss’s law, 5, 45, 322
GCA, See Gradual channel
approximation (GCA)
Generation and recombination
in an indirect bandgap
semiconductor, 42f
GHz applications, MOSFET RF model
for, 283
GIDL, See Gate-induced drain leakage
(GIDL)
GISL, See Gate-induced source leakage
(GISL)
Global process variability, 286–287, 286f
GNR, See Graphene nanoribbons
(GNR)
Golden
die, 426
wafer, 426
Gradual channel approximation (GCA),
136, 318
Graphene nanoribbons (GNR), 357
Green IC technology, 343
Gummel plot, 393, 393f
Gummel–Poon (GP) model, 4
H
Halo doping, 177f, 180
nonuniform lateral channel doping
profile due to, 181f
High frequency (HF)
C–V characteristics, 119
C–V plot, 119
High-level injection, 40, 395–412
Hiroshima University STARC IGFET
Model (HiSIM), 149
Hooge’s empirical relation, 266
Hot carrier current effect in nMOSFETs,
213f
Hot carrier effect
in MOSFETs, 210f
in nMOSFETs, 213f
Hot electrons, 210
Householder’s method, 324, 334
HSPICE circuit computer-aided design
(CAD), 423
I
ICs, See Integrated circuits (ICs)
Ideal drain current model, 361–364
Ideality factor, 69
Ideal MOSFET device structure, 133f
Ihantola–Moll model, 161
Impact ionization, 175
coefficients, 212
Impurities, types of, 26
Indefinite admittance matrix, 238
Independent multigate
C–V model, 338–340
FET model, 332–336
Independent multigate (IMG), 318
Indirect bandgap semiconductors,
41f, 42
Indirect recombination process,
42, 43f
Induced charge density, variation
of, 105f
Inductance (L), 3
Integrated circuits (ICs), 251, 286, 343,
371, 424
analysis of, 1
invention of, 1
technology for, work functions
of commonly used gate
material, 87t
transistors, 19
Inter-die process variability, 286
Interface states, 90
Interface-trapped charge, 90
International Technology Roadmap for
Semiconductors, 288
Intra-die process variability, 287
Intrinsic capacitance model,
238, 336
Intrinsic energy level, 24
Intrinsic Fermi level, 24, 44
Intrinsic process variability, 285
Intrinsic semiconductors, 23–26
Inverse early voltage, 405
Inversion charge density, 160–161
Inversion condition, 98, 98f
Inversion layer quantization, 113f
Ionized impurity scattering, 192
IR drop, 3
I–V (current-voltage) relation, 299