519
Index
Electron affinity, 85
Electron drift, 31
current density, 33
Electronic design automation (EDA)
tools, 1
Electronic energy level, 90
Electron lifetime, 65
Electrostatics, 318–324, 333–334
Elmore’s approach, 275
EM2 BJT model, 385
EM model, See Ebers–Moll (EM) model
EM1 model
DC model for, 377–385
injection version, 380
transport model, 381
EM2 model, 385
Energy band diagram of semiconductor,
21f
Energy band model, 20–21
Excess carriers, 40
Extrinsic semiconductor, 26–31
energy band diagram representation
in, 28
Fermi level in, 28–30
form covalent bonds, 27f
F
Fermi–Dirac (F–D) distribution
functions, 22f
Fermi–Dirac statistics, 361
Fermi function, 22
Fick’s first law of diffusion, 147, 391, 397
Field-effect transistors (FETs), 314, 343
acoustic phonon scattering, 331–332
common multiple-gate, 318–332
compact modeling of, 3
Coulomb scattering, 331–332
3D cross section of typical
multifin, 315f
FinFET, 309, 314
independent multiple-gate, 332–336
surface roughness scattering,
331–332
UTB-MOSFETs provide major issues
solutions, 314
Fin, 315
First-order drain current model, 153
Fixed corner models, 295–297, 305t, 433
Fixed-oxide charge, 90–91
Fix’s first law, 37
Flat band condition, 94
Flat band voltage, 88, 92, 94
total shift in, 92
Flicker noise, 266–273
characteristics of nMOSFET and
pMOSFET, 272f
Hooge’s empirical relation, 266
linear region, 270
model, 266–273
noise spectra of an nMOSFET and a
pMOSFET, 273f
physical mechanism, 266
physical origin different
theories, 266
saturation region, 271
small signal equivalent circuit model
of MOSFET, 273f
subthreshold region, 271–273
1/f noise, See Flicker noise; Lowfrequency noise
Forbidden band, 20
Forbidden gap, 20
Formation of built-in electric field, 52f
Forward
characteristics of real
pn-junction, 68f
early voltage (V AF ), 407
emission coefficient, 406
kneecurrent, 411
Free electrons, 20
Front-end process variability, 285–291
Fully depleted channel device, 345
G
Gate current model, 219–220, 221f
Gate current, tunneling components
of, 220
Gate electrode, 132
Gate-induced drain leakage (GIDL),
9, 218
body current model, 218–219
current in nMOSFET device, 218f
Gate-induced source leakage (GISL),
9, 218
Gate leakage current, 3
Gate over drive voltage, 154
Index
Electron affinity, 85
Electron drift, 31
current density, 33
Electronic design automation (EDA)
tools, 1
Electronic energy level, 90
Electron lifetime, 65
Electrostatics, 318–324, 333–334
Elmore’s approach, 275
EM2 BJT model, 385
EM model, See Ebers–Moll (EM) model
EM1 model
DC model for, 377–385
injection version, 380
transport model, 381
EM2 model, 385
Energy band diagram of semiconductor,
21f
Energy band model, 20–21
Excess carriers, 40
Extrinsic semiconductor, 26–31
energy band diagram representation
in, 28
Fermi level in, 28–30
form covalent bonds, 27f
F
Fermi–Dirac (F–D) distribution
functions, 22f
Fermi–Dirac statistics, 361
Fermi function, 22
Fick’s first law of diffusion, 147, 391, 397
Field-effect transistors (FETs), 314, 343
acoustic phonon scattering, 331–332
common multiple-gate, 318–332
compact modeling of, 3
Coulomb scattering, 331–332
3D cross section of typical
multifin, 315f
FinFET, 309, 314
independent multiple-gate, 332–336
surface roughness scattering,
331–332
UTB-MOSFETs provide major issues
solutions, 314
Fin, 315
First-order drain current model, 153
Fixed corner models, 295–297, 305t, 433
Fixed-oxide charge, 90–91
Fix’s first law, 37
Flat band condition, 94
Flat band voltage, 88, 92, 94
total shift in, 92
Flicker noise, 266–273
characteristics of nMOSFET and
pMOSFET, 272f
Hooge’s empirical relation, 266
linear region, 270
model, 266–273
noise spectra of an nMOSFET and a
pMOSFET, 273f
physical mechanism, 266
physical origin different
theories, 266
saturation region, 271
small signal equivalent circuit model
of MOSFET, 273f
subthreshold region, 271–273
1/f noise, See Flicker noise; Lowfrequency noise
Forbidden band, 20
Forbidden gap, 20
Formation of built-in electric field, 52f
Forward
characteristics of real
pn-junction, 68f
early voltage (V AF ), 407
emission coefficient, 406
kneecurrent, 411
Free electrons, 20
Front-end process variability, 285–291
Fully depleted channel device, 345
G
Gate current model, 219–220, 221f
Gate current, tunneling components
of, 220
Gate electrode, 132
Gate-induced drain leakage (GIDL),
9, 218
body current model, 218–219
current in nMOSFET device, 218f
Gate-induced source leakage (GISL),
9, 218
Gate leakage current, 3
Gate over drive voltage, 154