518
Index
DITS, See Drain-induced threshold
voltage shift (DITS)
Donor atoms, 26
Dopants, 26
Double-gate FET (DG-FET), 320, 323, 333
2D cross-sectional view of channel
region, 333f
Double-gate FinFET (DG-FinFet),
315–316
Poisson’s drift/diffusion equations,
318
Double-gate MOSFET (DG-MOSFET), 314
3D cross section of ideal, 315f
energy-band diagrams for, 331f
Drain current model, 138–171, 190–209,
325–328, 335–336, 360–367
basic feature of nonzero slope for
saturated, 159f
charge density model, 327
charge-sheet model, 146–150
current voltage characteristics of
nMOSFET device, 154f, 158f
diffusion component of, 148–150
drain current formulation, 139–142
drift component of, 147–148
drift-diffusion equation, 325
energy band diagram of nMOSFET
device, 142f
formulation, 139–144
as function of gate voltage obtained
by charge sheet model, 150f
Gauss’s law, 326
ideal, 361–364
I ds – V ds characteristics of nMOSFET
device, 159f
I–V characteristics, 327f
linear region, 197–200
modeling channel transports using
drain MOSFET, 364–366
modeling channel transports using
source resistance, 366–367
Pao-Sah model, 144–146
regional, 150–171
saturation region, 200–201
schematic diagram of nMOSFET
device, 156f
simulate SCE lightly doped
DG-nMOSFETs, 330f
subthreshold region, 197
Taylor’s series expansion, 326
volume inversion lightly doped
DG-nMOSFETs, 328, 328f
Drain-induced barrier lowering
(DIBL), 175
early voltage due to, 204
Drain-induced threshold voltage shift
(DITS), 183
Drain voltage, 215
short channel effect in MOSFETs due
to, 185f
DRAM, See Dynamic random–access
memory (DRAM)
Drift component of drain, 147
Drift current, 33
Drift-diffusion equation, 325
Drift velocity, 31
of electrons and holes in silicon, 36t
parameters for field dependence of, 35t
Dynamic model
common multigate C–V model,
336–338
independent multigate C–V model,
338–340
large signal, 225
small signal, 225
Dynamic random-access memory
(DRAM), 10
E
Early effect, 371–372, 395–397
Early voltage, 203
forward, 407
inverse, 405
Ebers–Moll (EM) model, 4, 371
Effective channel
length (L eff ), 189–190
width (W eff ), 189–190
Effective gate voltage, 154
Effective mobility, 191
Effective vertical electric field on
MOSFET inversion carriers,
191f
Electrical confinement (EC), 330
Electrical resistivity, 33–34
Electrical test (ET) data, 295–296
Electric field, 31, 55–58
built-in, 38–39
Index
DITS, See Drain-induced threshold
voltage shift (DITS)
Donor atoms, 26
Dopants, 26
Double-gate FET (DG-FET), 320, 323, 333
2D cross-sectional view of channel
region, 333f
Double-gate FinFET (DG-FinFet),
315–316
Poisson’s drift/diffusion equations,
318
Double-gate MOSFET (DG-MOSFET), 314
3D cross section of ideal, 315f
energy-band diagrams for, 331f
Drain current model, 138–171, 190–209,
325–328, 335–336, 360–367
basic feature of nonzero slope for
saturated, 159f
charge density model, 327
charge-sheet model, 146–150
current voltage characteristics of
nMOSFET device, 154f, 158f
diffusion component of, 148–150
drain current formulation, 139–142
drift component of, 147–148
drift-diffusion equation, 325
energy band diagram of nMOSFET
device, 142f
formulation, 139–144
as function of gate voltage obtained
by charge sheet model, 150f
Gauss’s law, 326
ideal, 361–364
I ds – V ds characteristics of nMOSFET
device, 159f
I–V characteristics, 327f
linear region, 197–200
modeling channel transports using
drain MOSFET, 364–366
modeling channel transports using
source resistance, 366–367
Pao-Sah model, 144–146
regional, 150–171
saturation region, 200–201
schematic diagram of nMOSFET
device, 156f
simulate SCE lightly doped
DG-nMOSFETs, 330f
subthreshold region, 197
Taylor’s series expansion, 326
volume inversion lightly doped
DG-nMOSFETs, 328, 328f
Drain-induced barrier lowering
(DIBL), 175
early voltage due to, 204
Drain-induced threshold voltage shift
(DITS), 183
Drain voltage, 215
short channel effect in MOSFETs due
to, 185f
DRAM, See Dynamic random–access
memory (DRAM)
Drift component of drain, 147
Drift current, 33
Drift-diffusion equation, 325
Drift velocity, 31
of electrons and holes in silicon, 36t
parameters for field dependence of, 35t
Dynamic model
common multigate C–V model,
336–338
independent multigate C–V model,
338–340
large signal, 225
small signal, 225
Dynamic random-access memory
(DRAM), 10
E
Early effect, 371–372, 395–397
Early voltage, 203
forward, 407
inverse, 405
Ebers–Moll (EM) model, 4, 371
Effective channel
length (L eff ), 189–190
width (W eff ), 189–190
Effective gate voltage, 154
Effective mobility, 191
Effective vertical electric field on
MOSFET inversion carriers,
191f
Electrical confinement (EC), 330
Electrical resistivity, 33–34
Electrical test (ET) data, 295–296
Electric field, 31, 55–58
built-in, 38–39