516
Index
Bulk resistance, 71
Bulk silicon, carrier mobility in, 32
Buried-halo MOSFET (BH-MOSFET),
309, 310f
Buried oxide (BOx), 318
C
CAD, See Circuit computer–aided
design (CAD)
Capacitance, 3
collector-base junction, 373–374
depletion layer, 73
junction, 73–76
Capacitance model, MOSFET, 226–237
intrinsic charges and capacitances,
226–229
limitations of Meyer model, 236–237
Meyer model, 229–236
Capacitance-voltage (C–V)
characteristics, 2, 426
deep depletion, 119–121
high frequency (HF), 119
of ideal MOS capacitor system, 120f
low frequency (LF), 115–119, 122f
Capacitance-voltage (C–V) model, 274
common multigate, 336–338
independent multigate, 338–340
Carrier density fluctuation model, 266
Carrier generation (G), 39
Carrier injection, 40
Carrier mobility, temperature
dependence of, 209
Carrier recombination (R), 39
Centerline process technology, 294
Channel length modulation (CLM), 157,
175, 250
early voltage due to, 204
effect of, 159f
Channel region, 132
Charge-based capacitance models, 229
channel charge partition, 239
channel length modulation
(CLM), 250
lightly doped drain (LDD), 250
long channel capacitance model,
246–247
long channel charge model, 241–246
Miller effect, 247
short channel capacitance model, 250
short channel charge model, 248–250
Ward-Dutton partition, 239
Charge-based compact models, 7, 12–14
Charge density fluctuation model,
266, 327
Charges
location of, 90f
types of, 89, 90f
Charge-sheet model, 146–150
diffusion component of drain
current, 148–150
drain current as function of gate
voltage obtained by, 150f
drift component of drain current,
147–148
Circuit computer-aided design (CAD), 1,
19, 132, 225, 261, 274, 423
compact model for circuit, 3, 5
conventional process variability
modeling, 294–296
DC MOSFET model for, 170
diode equivalent circuit for, 77–78
generate compact device model
library, 424f
MOSFET model for, 152
nanoscale device technology for, 183
parameters of Level 1 MOSFET
model for, 160t
usage of compact models in
circuit, 16f
VLSI devices for, 150
Circuit simulation
compact models for, 1–3
compact device models, 2–3
compact interconnect models, 3
CMOS, See Complementary metaloxide-semiconductor (CMOS)
CMOS field-effect transistor
(CMOSFET)
2D-cross section of ideal advanced,
133f
CMOS transistor, 132
Collector-base (CB) junction capacitance,
373–374
Common gate, 318
Common multigate (CMG)
C–V model, 336–338
structure, 318
Index
Bulk resistance, 71
Bulk silicon, carrier mobility in, 32
Buried-halo MOSFET (BH-MOSFET),
309, 310f
Buried oxide (BOx), 318
C
CAD, See Circuit computer–aided
design (CAD)
Capacitance, 3
collector-base junction, 373–374
depletion layer, 73
junction, 73–76
Capacitance model, MOSFET, 226–237
intrinsic charges and capacitances,
226–229
limitations of Meyer model, 236–237
Meyer model, 229–236
Capacitance-voltage (C–V)
characteristics, 2, 426
deep depletion, 119–121
high frequency (HF), 119
of ideal MOS capacitor system, 120f
low frequency (LF), 115–119, 122f
Capacitance-voltage (C–V) model, 274
common multigate, 336–338
independent multigate, 338–340
Carrier density fluctuation model, 266
Carrier generation (G), 39
Carrier injection, 40
Carrier mobility, temperature
dependence of, 209
Carrier recombination (R), 39
Centerline process technology, 294
Channel length modulation (CLM), 157,
175, 250
early voltage due to, 204
effect of, 159f
Channel region, 132
Charge-based capacitance models, 229
channel charge partition, 239
channel length modulation
(CLM), 250
lightly doped drain (LDD), 250
long channel capacitance model,
246–247
long channel charge model, 241–246
Miller effect, 247
short channel capacitance model, 250
short channel charge model, 248–250
Ward-Dutton partition, 239
Charge-based compact models, 7, 12–14
Charge density fluctuation model,
266, 327
Charges
location of, 90f
types of, 89, 90f
Charge-sheet model, 146–150
diffusion component of drain
current, 148–150
drain current as function of gate
voltage obtained by, 150f
drift component of drain current,
147–148
Circuit computer-aided design (CAD), 1,
19, 132, 225, 261, 274, 423
compact model for circuit, 3, 5
conventional process variability
modeling, 294–296
DC MOSFET model for, 170
diode equivalent circuit for, 77–78
generate compact device model
library, 424f
MOSFET model for, 152
nanoscale device technology for, 183
parameters of Level 1 MOSFET
model for, 160t
usage of compact models in
circuit, 16f
VLSI devices for, 150
Circuit simulation
compact models for, 1–3
compact device models, 2–3
compact interconnect models, 3
CMOS, See Complementary metaloxide-semiconductor (CMOS)
CMOS field-effect transistor
(CMOSFET)
2D-cross section of ideal advanced,
133f
CMOS transistor, 132
Collector-base (CB) junction capacitance,
373–374
Common gate, 318
Common multigate (CMG)
C–V model, 336–338
structure, 318