515
Index
Note: Locators followed by “f” and “t” denote figures and tables in the text
A
Accumulation charge, 96
ACM model, 13
Acoustic phonon scattering, 331–332
Advanced compact MOSFET, 13
Advanced thermal noise model, 264–265
Ambipolar behavior of TFETs, 345
Atoms, donor and acceptor, 27f
Auger recombination, 44
Avalanche breakdown voltage, 72
Avalanche current, low-level, 212
Avalanche regime, 141
B
Back-end process variability, 285
Backward propagation of variance
(BPV), 296
Band-bending potential
formulation of Poisson’s equation,
100–103
variation of, 107f
Bandgap widening, 114
Band-to-band recombination, 41, 41f
Band-to-band tunneling (BTBT), 3, 175, 218
Barrier height, 52
Basic model, thermal noise, 264
Berkeley Short Channel IGFET Model
(BSIM), 7, 324
first generation of, 7
version 4 (BSIM4), 300t, 301–302,
306t–307t, 423
measured data of nMOSFET,
429–431f
parameters used in, 186
temperature dependence of,
208–209
Bipolar junction transistors (BJTs), 1, 371
advanced model, 372
areas of applications, 371
basic features of, 372–374
basic operation, 374
bipolar transistors, 371
compact model, 377–415
components of base charge, 403f
Ebers–Moll (EM) model, 4
EM2 BJT model, 385
EM1 model, 371
equivalent circuit of SGP, 413f
invention of, 4
lateral, 372
mode of operations, 375–377
operating regimes, 4
parasitic circuit elements, 385
physical effects in, 4
Spice Gummel–Poon (SGP) model,
371–372
summary of compact, 412–415
vertical, 372
very-large-scale-ntegrated (VLSI)
circuits, 371
Body effect coefficient, 111, 176
Body factor, 137
Boltzmann
constant, 86
distribution, 343, 352
distribution function, 333
Breakdown condition, 72
Breakdown regime, 141
Breakdown voltage, 71–72
avalanche, 72
Brews charge-sheet model, 149
Built-in electric field, formation of, 52f
Built-in potential, 52–54
Bulk-charge coefficient, 162
Bulk-charge effect, 201–202
Bulk-charge model, 160–161
Bulk-charge sharing, 183
short channel effect in MOSFETs
caused by, 184f
Bulk mobility, 33
Index
Note: Locators followed by “f” and “t” denote figures and tables in the text
A
Accumulation charge, 96
ACM model, 13
Acoustic phonon scattering, 331–332
Advanced compact MOSFET, 13
Advanced thermal noise model, 264–265
Ambipolar behavior of TFETs, 345
Atoms, donor and acceptor, 27f
Auger recombination, 44
Avalanche breakdown voltage, 72
Avalanche current, low-level, 212
Avalanche regime, 141
B
Back-end process variability, 285
Backward propagation of variance
(BPV), 296
Band-bending potential
formulation of Poisson’s equation,
100–103
variation of, 107f
Bandgap widening, 114
Band-to-band recombination, 41, 41f
Band-to-band tunneling (BTBT), 3, 175, 218
Barrier height, 52
Basic model, thermal noise, 264
Berkeley Short Channel IGFET Model
(BSIM), 7, 324
first generation of, 7
version 4 (BSIM4), 300t, 301–302,
306t–307t, 423
measured data of nMOSFET,
429–431f
parameters used in, 186
temperature dependence of,
208–209
Bipolar junction transistors (BJTs), 1, 371
advanced model, 372
areas of applications, 371
basic features of, 372–374
basic operation, 374
bipolar transistors, 371
compact model, 377–415
components of base charge, 403f
Ebers–Moll (EM) model, 4
EM2 BJT model, 385
EM1 model, 371
equivalent circuit of SGP, 413f
invention of, 4
lateral, 372
mode of operations, 375–377
operating regimes, 4
parasitic circuit elements, 385
physical effects in, 4
Spice Gummel–Poon (SGP) model,
371–372
summary of compact, 412–415
vertical, 372
very-large-scale-ntegrated (VLSI)
circuits, 371
Body effect coefficient, 111, 176
Body factor, 137
Boltzmann
constant, 86
distribution, 343, 352
distribution function, 333
Breakdown condition, 72
Breakdown regime, 141
Breakdown voltage, 71–72
avalanche, 72
Brews charge-sheet model, 149
Built-in electric field, formation of, 52f
Built-in potential, 52–54
Bulk-charge coefficient, 162
Bulk-charge effect, 201–202
Bulk-charge model, 160–161
Bulk-charge sharing, 183
short channel effect in MOSFETs
caused by, 184f
Bulk mobility, 33