505
References
62. Y. Taur, “Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs,” IEEE Transactions on Electron Devices, vol. 48, no. 12,
pp. 2861–2869, 2001.
63. S. Venugopalan, D.D. Lu, Y. Kawakami, P.M. Lee, A.M. Niknejad, and C. Hu,
“BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit
simulations,” Solid-State Electronics, vol. 67, no. 1, pp. 79–89, 2012.
64. F. Balestra, S. Cristoloveanu, M. Benachir, J. Brini, and T. Elewa, “Double-gate
silicon-on-insulator transistor with volume inversion: A new device with greatly
enhanced performance,” IEEE Electron Device Letters, vol. 8, no. 9, pp. 410–412, 1987.
65. M.V. Dunga, C.-H. Lin, D.D. Lu, W. Xiong, C.R. Cleavelin, P. Patruno, J.-R.
Hwang, F.-L. Yang, A.M. Niknejad, and C. Hu, “BSIM-MG: A versatile multigate FET model for mixed-signal design,” in Symposium on VLSI Technology,
pp. 60–61, 2007.
66. X. Liang and Y. Taur, “A 2-D analytical solution for SCEs in DG MOSFETs,”
IEEE Transactions on Electron Devices, vol. 51, no. 9, pp. 1385–1391, 2004.
67. Q. Chen, E.M. Harrell, and J.D. Meindl, “A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs,” IEEE
Transactions on Electron Devices, vol. 50, no. 7, pp. 1631–1637, 2003.
68. K. Suzuki, T. Tanaka, Y. Tosaka, H. Horie, and Y. Arimoto, “Scaling theory for
double-gate SOI MOSFETs,” IEEE Transactions on Electron Devices, vol. 40, no. 12,
pp. 2326–2329, 1993.
69. K. Suzuki, Y. Tosaka, and T. Sugii, “Analytical threshold voltage model for
short channel n+/p+ double-gate SOI MOSFETs,” IEEE Transactions on Electron
Devices, vol. 43, no. 5, pp. 732–738, 1996.
70. K.K. Young, “Short-channel effect in fully depleted SOI MOSFET’s,” IEEE
Transactions on Electron Devices, vol. 36, no. 2, pp. 399–402, 1989.
71. W. Liu, BSIM4 and MOSFET Modeling for IC Simulation, World Scientific,
Singapore, 2011.
72. M.V. Dunga, C.-H. Lin, A.M. Niknejad, and C. Hu, “BSIM-CMG: A compact
model for multi-gate transistors,” in FinFETs and Other Multi-Gate Transistors,
J.-P. Colinge (ed.). Springer, New York, pp. 113–153, 2008.
73. D. Lu, C.-H. Lin, A.M. Niknejad, and C. Hu, “Multi-gate MOSFET compact model
BSIM-MG,” in Compact Modeling: Principles, Techniques and Applications, G.
Gildenblat (ed.). Springer, New York, pp. 395–429, 2010.
74. S. Khandelwal, J. Duarte, V. Sriramkumar, N. Paydavosi, D. Lu, C.-H. Lin, M.
Dunga, S. Yao, T. Morshed, A. Niknejad, and C. Hu, “BSIM-CMG 108.0.0 MultiGate MOSFET Compact Model Technical Manual,” University of California,
Berkeley, CA, 2014.
75. F. Stern, “Electronic properties of two-dimensional systems,” Reviews of Modern
Physics, vol. 54, pp. 437–672, 1982.
76. R. Rios, N.D. Arora, C.-L. Huang, N. Khabil, J. Faricelli, and L. Gruber, “A physical
compact MOSFET model, including quantum mechanicals effects, for statistical
circuit design applications,” in IEEE International Electron Devices Meeting Technical
Digest, pp. 947–950, 1995.
77. E. Merzbacher, Quantum Mechanics, Wiley, New York, 1997.
78. G. Baccarani and S. Reggiani, “A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects,” IEEE Transactions on Electron
Devices, vol. 46, no. 8, pp. 1656–1666, 1999.
References
62. Y. Taur, “Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs,” IEEE Transactions on Electron Devices, vol. 48, no. 12,
pp. 2861–2869, 2001.
63. S. Venugopalan, D.D. Lu, Y. Kawakami, P.M. Lee, A.M. Niknejad, and C. Hu,
“BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit
simulations,” Solid-State Electronics, vol. 67, no. 1, pp. 79–89, 2012.
64. F. Balestra, S. Cristoloveanu, M. Benachir, J. Brini, and T. Elewa, “Double-gate
silicon-on-insulator transistor with volume inversion: A new device with greatly
enhanced performance,” IEEE Electron Device Letters, vol. 8, no. 9, pp. 410–412, 1987.
65. M.V. Dunga, C.-H. Lin, D.D. Lu, W. Xiong, C.R. Cleavelin, P. Patruno, J.-R.
Hwang, F.-L. Yang, A.M. Niknejad, and C. Hu, “BSIM-MG: A versatile multigate FET model for mixed-signal design,” in Symposium on VLSI Technology,
pp. 60–61, 2007.
66. X. Liang and Y. Taur, “A 2-D analytical solution for SCEs in DG MOSFETs,”
IEEE Transactions on Electron Devices, vol. 51, no. 9, pp. 1385–1391, 2004.
67. Q. Chen, E.M. Harrell, and J.D. Meindl, “A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs,” IEEE
Transactions on Electron Devices, vol. 50, no. 7, pp. 1631–1637, 2003.
68. K. Suzuki, T. Tanaka, Y. Tosaka, H. Horie, and Y. Arimoto, “Scaling theory for
double-gate SOI MOSFETs,” IEEE Transactions on Electron Devices, vol. 40, no. 12,
pp. 2326–2329, 1993.
69. K. Suzuki, Y. Tosaka, and T. Sugii, “Analytical threshold voltage model for
short channel n+/p+ double-gate SOI MOSFETs,” IEEE Transactions on Electron
Devices, vol. 43, no. 5, pp. 732–738, 1996.
70. K.K. Young, “Short-channel effect in fully depleted SOI MOSFET’s,” IEEE
Transactions on Electron Devices, vol. 36, no. 2, pp. 399–402, 1989.
71. W. Liu, BSIM4 and MOSFET Modeling for IC Simulation, World Scientific,
Singapore, 2011.
72. M.V. Dunga, C.-H. Lin, A.M. Niknejad, and C. Hu, “BSIM-CMG: A compact
model for multi-gate transistors,” in FinFETs and Other Multi-Gate Transistors,
J.-P. Colinge (ed.). Springer, New York, pp. 113–153, 2008.
73. D. Lu, C.-H. Lin, A.M. Niknejad, and C. Hu, “Multi-gate MOSFET compact model
BSIM-MG,” in Compact Modeling: Principles, Techniques and Applications, G.
Gildenblat (ed.). Springer, New York, pp. 395–429, 2010.
74. S. Khandelwal, J. Duarte, V. Sriramkumar, N. Paydavosi, D. Lu, C.-H. Lin, M.
Dunga, S. Yao, T. Morshed, A. Niknejad, and C. Hu, “BSIM-CMG 108.0.0 MultiGate MOSFET Compact Model Technical Manual,” University of California,
Berkeley, CA, 2014.
75. F. Stern, “Electronic properties of two-dimensional systems,” Reviews of Modern
Physics, vol. 54, pp. 437–672, 1982.
76. R. Rios, N.D. Arora, C.-L. Huang, N. Khabil, J. Faricelli, and L. Gruber, “A physical
compact MOSFET model, including quantum mechanicals effects, for statistical
circuit design applications,” in IEEE International Electron Devices Meeting Technical
Digest, pp. 947–950, 1995.
77. E. Merzbacher, Quantum Mechanics, Wiley, New York, 1997.
78. G. Baccarani and S. Reggiani, “A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects,” IEEE Transactions on Electron
Devices, vol. 46, no. 8, pp. 1656–1666, 1999.