496
References
39. R. Singh, A. Juge, R. Joly, and G. Morin, “An investigation into the nonquasistatic effects in MOS devices with an wafer S-parameter techniques,” in
Proceedings of the IEEE International Conference on Microelectron Test Structures,
Barcelona, Spain, 1993.
40. Y. Cheng, M. Schroter, C. Enz, M. Matloubian, and D. Pehlke, “RF modeling
issues of deep-submicron MOSFETs for circuit design,” in 5th International
Conference on Solid-State and Integrated-Circuit Technology, pp. 416–419, 1998.
41. M. Bagheri and Y. Tsividis, “A small signal dc-to-high frequency non-quasistatic
model for the four-terminal MOSFET valid in all regions of operation,” IEEE
Transactions on Electron Devices, vol. 32, no. 11, pp. 2383–2391, 1985.
42. H.J. Park, P.K. Ko, and C. Hu, “A charge-conserving non-quasi-static MOSFET
model for SPICE transient analysis,” in IEEE International Electron Devices Meeting
Technical Digest, pp. 652–655, 1987.
43. C. Turchetti, P. Mancini, and G. Masetti, “A CAD-oriented non-quasi-static
approach for the transient analysis of MOS IC’s,” IEEE Journal of Solid-State
Circuits, vol. 21, no. 5, pp. 827–836, 1986.
44. Y.P. Tsividis, Operation and Modeling of the MOS Transistor. New York: McGrawHill, 1987.
45. W.C. Elmore, “The transient response of damped linear networks with particular
regard to wideband amplifiers,” Journal of Applied Physics, vol. 19, no. 1, pp. 55–63,
January 1948.
46. J.G. Fossum, H. Jeong, and S. Veeraraghavan, “Significance of the channelcharge partition in the transient MOSFET model,” IEEE Transactions on Electron
Devices, vol. 33, no. 10, pp. 1621–1623, October 1986.
47. M.F. Sevat, “On the channel charge division in MOSFET modeling,” in IEEE
International Conference on Computer-Aided Design, Digest of Technical Papers,
pp. 208–210, 1987.
48. B.J. Sheu and P.K. Ko, “Measurement and modeling of short-channel MOS
transistor gate capacitances,” IEEE Journal of Solid-State Circuits, vol. 22, no. 3,
pp. 464–472, 1987.
49. W. Liu, C. Bowen, and M.-C. Chang, “A CAD-compatible non-quasi-static
MOSFET model,” in IEEE International Electron Devices Meeting Technical Digest,
pp. 151–154, 1996.
50. A.A. Abidi, A. Rofougaran, G. Chang, J. Rael, J. Chang, M. Rofougaran, and
P. Chang, “The future of CMOS wireless transceivers,” in ISSCC Technical
Digest, pp. 118–119, 1997.
51. W. Liu, R. Gharpurey, M.C. Chang, U. Erdogan, R. Aggarwal, and J.P. Mattia,
“RF MOSFET modeling accounting for distributed sub-state and channel
resistance with emphasis on the BSIM3v3 SPICE model,” in IEEE International
Electron Devices Meeting Technical Digest, pp. 309–312, 1997.
52. M.C. Ho, F. Brauchler, and J.Y. Yang, “Scalable RF Si MOSFET distributed
lumped element model based on BSIM3v3,” Electronics Letters, vo1. 33, no. 23,
pp. 1992–1993, 1997.
53. D.R. Pehlke, M. Schroter, A. Burnstein, M. Matloubian, and M.F. Chang, “High
frequency application of MOS compact model and their development for scalable RF model libraries,” in Proceedings of the IEEE Custom Integrated Circuits
Conference, pp. 219–222, 1998.
54. J.-J. Ou, J. Xiaodong, I. Ma, C. Hu, and P.R. Gray, “CMOS RF modeling for GHz
communication IC’s,” in Symposium on VLSI Technology, pp. 94–95, 1998.
References
39. R. Singh, A. Juge, R. Joly, and G. Morin, “An investigation into the nonquasistatic effects in MOS devices with an wafer S-parameter techniques,” in
Proceedings of the IEEE International Conference on Microelectron Test Structures,
Barcelona, Spain, 1993.
40. Y. Cheng, M. Schroter, C. Enz, M. Matloubian, and D. Pehlke, “RF modeling
issues of deep-submicron MOSFETs for circuit design,” in 5th International
Conference on Solid-State and Integrated-Circuit Technology, pp. 416–419, 1998.
41. M. Bagheri and Y. Tsividis, “A small signal dc-to-high frequency non-quasistatic
model for the four-terminal MOSFET valid in all regions of operation,” IEEE
Transactions on Electron Devices, vol. 32, no. 11, pp. 2383–2391, 1985.
42. H.J. Park, P.K. Ko, and C. Hu, “A charge-conserving non-quasi-static MOSFET
model for SPICE transient analysis,” in IEEE International Electron Devices Meeting
Technical Digest, pp. 652–655, 1987.
43. C. Turchetti, P. Mancini, and G. Masetti, “A CAD-oriented non-quasi-static
approach for the transient analysis of MOS IC’s,” IEEE Journal of Solid-State
Circuits, vol. 21, no. 5, pp. 827–836, 1986.
44. Y.P. Tsividis, Operation and Modeling of the MOS Transistor. New York: McGrawHill, 1987.
45. W.C. Elmore, “The transient response of damped linear networks with particular
regard to wideband amplifiers,” Journal of Applied Physics, vol. 19, no. 1, pp. 55–63,
January 1948.
46. J.G. Fossum, H. Jeong, and S. Veeraraghavan, “Significance of the channelcharge partition in the transient MOSFET model,” IEEE Transactions on Electron
Devices, vol. 33, no. 10, pp. 1621–1623, October 1986.
47. M.F. Sevat, “On the channel charge division in MOSFET modeling,” in IEEE
International Conference on Computer-Aided Design, Digest of Technical Papers,
pp. 208–210, 1987.
48. B.J. Sheu and P.K. Ko, “Measurement and modeling of short-channel MOS
transistor gate capacitances,” IEEE Journal of Solid-State Circuits, vol. 22, no. 3,
pp. 464–472, 1987.
49. W. Liu, C. Bowen, and M.-C. Chang, “A CAD-compatible non-quasi-static
MOSFET model,” in IEEE International Electron Devices Meeting Technical Digest,
pp. 151–154, 1996.
50. A.A. Abidi, A. Rofougaran, G. Chang, J. Rael, J. Chang, M. Rofougaran, and
P. Chang, “The future of CMOS wireless transceivers,” in ISSCC Technical
Digest, pp. 118–119, 1997.
51. W. Liu, R. Gharpurey, M.C. Chang, U. Erdogan, R. Aggarwal, and J.P. Mattia,
“RF MOSFET modeling accounting for distributed sub-state and channel
resistance with emphasis on the BSIM3v3 SPICE model,” in IEEE International
Electron Devices Meeting Technical Digest, pp. 309–312, 1997.
52. M.C. Ho, F. Brauchler, and J.Y. Yang, “Scalable RF Si MOSFET distributed
lumped element model based on BSIM3v3,” Electronics Letters, vo1. 33, no. 23,
pp. 1992–1993, 1997.
53. D.R. Pehlke, M. Schroter, A. Burnstein, M. Matloubian, and M.F. Chang, “High
frequency application of MOS compact model and their development for scalable RF model libraries,” in Proceedings of the IEEE Custom Integrated Circuits
Conference, pp. 219–222, 1998.
54. J.-J. Ou, J. Xiaodong, I. Ma, C. Hu, and P.R. Gray, “CMOS RF modeling for GHz
communication IC’s,” in Symposium on VLSI Technology, pp. 94–95, 1998.