494
References
Chapter 7
1. A. van der Ziel, Noise in Solid State Devices and Circuit, Wiley-Interscience,
New York, 1986.
2. A. Ambrozy, Electronic Noise, McGraw-Hill, New York, 1982.
3. P.R. Gray and R.G. Meyer, Analysis and Design of Analog Integrated Circuits, Wiley,
New York, 1993.
4. Y. Tsividis and C. McAndrew, Operation and Modeling of the MOS Transistor,
Oxford University Press, Oxford, 2010.
5. M. Haartman and M. Ostling, Low Frequency Noise in Advanced MOSA Devices,
Springer, New York, 2007.
6. M.J. Deen, C.-H. Chen, S. Asgaran, G.A. Rezvani, J. Tao, and Y. Kiyota, “Highfrequency noise of modern MOSFETs: Compact modeling and measurement
issues,” IEEE Transactions on Electron Devices, vol. 53, no. 9, pp. 2062–2081, 2006.
7. P. Jindal, “Compact noise models for MOSFETs,” IEEE Transactions on Electron
Devices, vol. 53, no. 9, pp. 2051–2061, 2006.
8. A. Van der Ziel, Noise: Source. Characterization, and Measurements, Prentice Hall,
Englewood Cliffs, NJ, 1970.
9. A.G. Jordan and N.A. Jordan, “Theory of the noise in metal oxide semiconductor
devices,” IEEE Transactions on Electron Devices, vol. 12, no. 3, pp. 148–156, 1965.
10. B. Wang, R. Hellums, and C.G. Sodini, “MOSFET thermal noise modeling for
analog integrated circuits,” IEEE Journal of Solid-State Circuits, vol. 29, no. 7,
pp. 833–835, 1994.
11. D.P. Triantis, A.N. Birbas, and D. Kondis, “Thermal noise modeling for short
channel MOSFETs,” IEEE Transactions on Electron Devices, vol. 43, no. 11,
pp. 1950–1955, 1996.
12. L.W. Nagel, SPICE2—A Computer Program to Simulate Semiconductor Circuits,
Memo ERL-M250, Electronic Research Laboratory, University of California,
Berkeley, CA, 1975.
13. P. Jindal and A. Van der Ziel, “Carrier fluctuation noise in a MOSFET channel
due to traps in the oxide,” Solid-State Electronics, vol. 216, pp. 901–903, 1978.
14. F.M. Klaassen, “Characterization of low l/f noise in MOS transistors,” IEEE
Transactions on Electron Devices, vol. 18, no. 10, pp. 887–891, 1971.
15. B.J. Gross and C.G. Sodini, “1/f noise in MOSFETs with ultrathin gate dielectric,”
in IEEE International Electron Devices Meeting Technical Digest, pp. 881–884, 1992.
16. T.G.M. Kleinpenning, “On l/f trapping noise in MOST’s,” IEEE Transactions on
Electron Devices, vol. 37, no. 9, pp. 2084–2089, 1990.
17. L.K.J. Vandamme, X. Li, and D. Rigaud, “1/f noise in MOS devices, mobility
or number fluctuations?,” IEEE Transactions on Electron Devices, vol. 41, no. 11,
pp. 1936–1945, 1994.
18. F.N. Hooge, “l/f noise sources,” IEEE Transactions on Electron Devices, vol. 41, no. 11,
pp. 1926–1935, 1994.
19. O. Jantsch, “Flicker (l/f) noise generated by a random walk of electrons in interface,” IEEE Transactions on Electron Devices, vol. 34, no. 5, pp. 1100–1113, 1987.
20. H. Mikeoshiba, “l/f noise in n-channel silicon-gate MOS transistors,” IEEE
Transactions on Electron Devices, vol. 29, no. 6, pp. 965–970, 1982.
References
Chapter 7
1. A. van der Ziel, Noise in Solid State Devices and Circuit, Wiley-Interscience,
New York, 1986.
2. A. Ambrozy, Electronic Noise, McGraw-Hill, New York, 1982.
3. P.R. Gray and R.G. Meyer, Analysis and Design of Analog Integrated Circuits, Wiley,
New York, 1993.
4. Y. Tsividis and C. McAndrew, Operation and Modeling of the MOS Transistor,
Oxford University Press, Oxford, 2010.
5. M. Haartman and M. Ostling, Low Frequency Noise in Advanced MOSA Devices,
Springer, New York, 2007.
6. M.J. Deen, C.-H. Chen, S. Asgaran, G.A. Rezvani, J. Tao, and Y. Kiyota, “Highfrequency noise of modern MOSFETs: Compact modeling and measurement
issues,” IEEE Transactions on Electron Devices, vol. 53, no. 9, pp. 2062–2081, 2006.
7. P. Jindal, “Compact noise models for MOSFETs,” IEEE Transactions on Electron
Devices, vol. 53, no. 9, pp. 2051–2061, 2006.
8. A. Van der Ziel, Noise: Source. Characterization, and Measurements, Prentice Hall,
Englewood Cliffs, NJ, 1970.
9. A.G. Jordan and N.A. Jordan, “Theory of the noise in metal oxide semiconductor
devices,” IEEE Transactions on Electron Devices, vol. 12, no. 3, pp. 148–156, 1965.
10. B. Wang, R. Hellums, and C.G. Sodini, “MOSFET thermal noise modeling for
analog integrated circuits,” IEEE Journal of Solid-State Circuits, vol. 29, no. 7,
pp. 833–835, 1994.
11. D.P. Triantis, A.N. Birbas, and D. Kondis, “Thermal noise modeling for short
channel MOSFETs,” IEEE Transactions on Electron Devices, vol. 43, no. 11,
pp. 1950–1955, 1996.
12. L.W. Nagel, SPICE2—A Computer Program to Simulate Semiconductor Circuits,
Memo ERL-M250, Electronic Research Laboratory, University of California,
Berkeley, CA, 1975.
13. P. Jindal and A. Van der Ziel, “Carrier fluctuation noise in a MOSFET channel
due to traps in the oxide,” Solid-State Electronics, vol. 216, pp. 901–903, 1978.
14. F.M. Klaassen, “Characterization of low l/f noise in MOS transistors,” IEEE
Transactions on Electron Devices, vol. 18, no. 10, pp. 887–891, 1971.
15. B.J. Gross and C.G. Sodini, “1/f noise in MOSFETs with ultrathin gate dielectric,”
in IEEE International Electron Devices Meeting Technical Digest, pp. 881–884, 1992.
16. T.G.M. Kleinpenning, “On l/f trapping noise in MOST’s,” IEEE Transactions on
Electron Devices, vol. 37, no. 9, pp. 2084–2089, 1990.
17. L.K.J. Vandamme, X. Li, and D. Rigaud, “1/f noise in MOS devices, mobility
or number fluctuations?,” IEEE Transactions on Electron Devices, vol. 41, no. 11,
pp. 1936–1945, 1994.
18. F.N. Hooge, “l/f noise sources,” IEEE Transactions on Electron Devices, vol. 41, no. 11,
pp. 1926–1935, 1994.
19. O. Jantsch, “Flicker (l/f) noise generated by a random walk of electrons in interface,” IEEE Transactions on Electron Devices, vol. 34, no. 5, pp. 1100–1113, 1987.
20. H. Mikeoshiba, “l/f noise in n-channel silicon-gate MOS transistors,” IEEE
Transactions on Electron Devices, vol. 29, no. 6, pp. 965–970, 1982.