486
References
19. Y.P. Varshni, “Temperature dependence of energy gap in semiconductors,”
Physica, vol. 34, no. 1, pp. 149–154, 1967.
20. S.K. Ghandhi, The Theory and Practice of Microelectronics, Wiley, New York,
1984.
21. N.D. Arora, J.R. Hauser, and D.J. Roulston, “Electron and hole mobilities in
silicon as a function of concentration and temperature,” IEEE Transactions on
Electronic Devices, vol. 29, no. 2, pp. 292–295, 1982.
22. W. Shockley and W.T. Read, “Statistics of the recombination of holes and electrons,” Physical Review, vol. 87, no. 5, pp. 835–842, 1952.
23. R.N. Hall, “Electron-hole recombination in germanium,” Physical Review, vol. 87,
no. 2, pp. 387–387, 1952.
24. S. Saha, C.S. Yeh, and B. Gadepally, “Impact ionization rate of electrons for
accurate simulation of substrate current in submicron devices,” Solid-State
Electronics, vol. 36, no. 10, pp. 1429–1432, 1993.
25. S. Saha, “Extraction of substrate current model parameters from device simulation,” Solid-State Electronics, vol. 37, no. 10, pp. 1786–1788, 1994.
26. G.W. Neudeck, The PN Junction Diode, vol. II, 2nd edition, Modular Series on
Solid-State Devices, Addision-Wesley, Reading, MA, 1987.
27. C. Zener, “A theory of electrical breakdown of solid dielectrics,” Proceedings of
the Royal Society of London, vol. A145, no. 8555, pp. 523–529, 1934.
28. E.O. Kane, “Zener tunneling in semiconductors,” Journal of Physics and Chemistry
of Solids, vol. 12, no. 2, 181–188, 1960.
Chapter 3
1. E.H. Nicollian and J.R. Brews, MOS (Metal Oxide Semiconductor) Physics and
Technology, John Wiley & Sons, New York, 1982.
2. N.D. Arora, MOSFET Models for VLSI Circuit Simulation: Theory and Practice,
Springer-Verlag, Wien, Austria, 1993.
3. R.S. Muller and T.I. Kamins with M. Chan, Device Electronics for Integrated
Circuits, 3rd edition, John Wiley & Sons, New York, 2003.
4. P. Ranade, H. Takeuchi, T.-J. King, and C. Hu, “Work function engineering of
molybdenum gate electrodes by nitrogen implantation,” Electrochemical and
Solid-State Letters, vol. 4, no. 11, pp. G85–G87, 2001.
5. S.M. Sze, Semiconductor Physics and Technology, John Wiley & Sons, New York,
1982.
6. T.P. Chow and A.J. Steckl, “Refractory metal silicides: Thin film properties and
processing technology,” IEEE Transactions on Electronic Devices, vol. 30, no. 11,
pp. 1480–1497, 1983.
7. Y. Tsividis, Operation and Modeling of the MOS Transistors, 2nd edition, Oxford
University Press, New York, 1999.
8. N. Lifshitz, “Dependence of the work function difference between the polysilicon gate and silicon substrate on the doping level in polysilicon,” IEEE
Transactions on Electronic Devices, vol. 32, no. 3, pp. 617–621, 1985.
References
19. Y.P. Varshni, “Temperature dependence of energy gap in semiconductors,”
Physica, vol. 34, no. 1, pp. 149–154, 1967.
20. S.K. Ghandhi, The Theory and Practice of Microelectronics, Wiley, New York,
1984.
21. N.D. Arora, J.R. Hauser, and D.J. Roulston, “Electron and hole mobilities in
silicon as a function of concentration and temperature,” IEEE Transactions on
Electronic Devices, vol. 29, no. 2, pp. 292–295, 1982.
22. W. Shockley and W.T. Read, “Statistics of the recombination of holes and electrons,” Physical Review, vol. 87, no. 5, pp. 835–842, 1952.
23. R.N. Hall, “Electron-hole recombination in germanium,” Physical Review, vol. 87,
no. 2, pp. 387–387, 1952.
24. S. Saha, C.S. Yeh, and B. Gadepally, “Impact ionization rate of electrons for
accurate simulation of substrate current in submicron devices,” Solid-State
Electronics, vol. 36, no. 10, pp. 1429–1432, 1993.
25. S. Saha, “Extraction of substrate current model parameters from device simulation,” Solid-State Electronics, vol. 37, no. 10, pp. 1786–1788, 1994.
26. G.W. Neudeck, The PN Junction Diode, vol. II, 2nd edition, Modular Series on
Solid-State Devices, Addision-Wesley, Reading, MA, 1987.
27. C. Zener, “A theory of electrical breakdown of solid dielectrics,” Proceedings of
the Royal Society of London, vol. A145, no. 8555, pp. 523–529, 1934.
28. E.O. Kane, “Zener tunneling in semiconductors,” Journal of Physics and Chemistry
of Solids, vol. 12, no. 2, 181–188, 1960.
Chapter 3
1. E.H. Nicollian and J.R. Brews, MOS (Metal Oxide Semiconductor) Physics and
Technology, John Wiley & Sons, New York, 1982.
2. N.D. Arora, MOSFET Models for VLSI Circuit Simulation: Theory and Practice,
Springer-Verlag, Wien, Austria, 1993.
3. R.S. Muller and T.I. Kamins with M. Chan, Device Electronics for Integrated
Circuits, 3rd edition, John Wiley & Sons, New York, 2003.
4. P. Ranade, H. Takeuchi, T.-J. King, and C. Hu, “Work function engineering of
molybdenum gate electrodes by nitrogen implantation,” Electrochemical and
Solid-State Letters, vol. 4, no. 11, pp. G85–G87, 2001.
5. S.M. Sze, Semiconductor Physics and Technology, John Wiley & Sons, New York,
1982.
6. T.P. Chow and A.J. Steckl, “Refractory metal silicides: Thin film properties and
processing technology,” IEEE Transactions on Electronic Devices, vol. 30, no. 11,
pp. 1480–1497, 1983.
7. Y. Tsividis, Operation and Modeling of the MOS Transistors, 2nd edition, Oxford
University Press, New York, 1999.
8. N. Lifshitz, “Dependence of the work function difference between the polysilicon gate and silicon substrate on the doping level in polysilicon,” IEEE
Transactions on Electronic Devices, vol. 32, no. 3, pp. 617–621, 1985.