485
References
MOSFET model,” in Technical Proceedings Workshop on Compact Modeling, NSTI
Nanotech, pp. 724–729, 2012.
136. H. Agarwal, S. Khandelwal, J.P. Duarte, Y.S. Chauhan, A. Niknejad, and
C. Hu, “BSIM6.1.0 MOSFET Compact Model Technical Manual,” University of
California, Berkeley, CA, 2014.
137. S.K. Saha, “Modelling the effectiveness of computer-aided development
projects in the semiconductor industry,” International Journal of Engineering
Management and Economics, vol. 1, no. 2/3, pp. 162–178, 2010.
Chapter 2
1. A.S. Grove, Physics and Technology of Semiconductor Devices, John Wiley & Sons,
New York, 1967.
2. R.A. Smith, Semiconductors, 2nd edition, Cambridge University Press, London,
1978.
3. B.G. Streetman and S.K. Banerjee, Solid State Electronic Devices, 7th edition,
Prentice Hall, Englewood Cliffs, NJ, 2014.
4. R.M. Warner, Jr. and B.L. Grung, Transistors—Fundamentals for the Integrated
Circuit Engineer, John Wiley & Sons, New York, 1983.
5. S.M. Sze and K.K. Ng, Physics of Semiconductor Devices, John Wiley & Sons,
New York, 2007.
6. R.S. Muller and T.I. Kamins, Device Electronics for Integrated Circuits, John Wiley &
Sons, New York, 1986.
7. R.F. Pierret, Advanced Semiconductor Fundamentals, Addison-Wesley, Reading,
MA, 1987.
8. E.S. Yang, Microelectronic Devices, McGraw-Hill, New York, 1988.
9. S. Wang, Fundamentals of Semiconductor Theory and Devices, Prentice Hall,
Englewood Cliffs, NJ, 1989.
10. M. Zambuto, Semiconductor Devices, McGraw-Hill, New York, 1989.
11. M. Shur, Physics of Semiconductor Devices, Prentice Hall, Englewood Cliffs, NJ, 1990.
12. G.W. Neudeck, The PN Junction Diode, Addison-Wesley, Reading, MA, 1989.
13. D.J. Roulston, Bipolar Semiconductor Devices, McGraw-Hill, New York, 1990.
14. P. Balk, P.G. Burkhardt, and L.V. Gregor, “Orientation dependence of built-in
surface charge on thermally oxidized silicon,” IEEE Proceedings, vol. 53, no. 12,
pp. 2133–2134, 1965.
15. M. Aoki, K. Yano, T. Masuhara, S. Ikeda, and S. Meguro, “Optimum crystallographic orientation of submicron CMOS devices,” in IEEE International Electron
Devices Meeting Technical Digest, pp. 577–580, 1985.
16. M.A. Green, “Intrinsic concentration, effective density of states, and effective
mass in silicon,” Journal of Applied Physics, vol. 67, no. 6, pp. 2944–2954, 1990.
17. N. Arora, MOSFET Models for VLSI Circuit Simulation: Theory and Practice,
Springer-Verlag, Wien, Austria, 1993.
18. L. Nagel and D. Pederson, “Simulation program with integrated circuit emphasis,” University of California, Berkeley, CA, Electronics Research Laboratory
Memorandum No. UCB/ERL M352, 1973.
References
MOSFET model,” in Technical Proceedings Workshop on Compact Modeling, NSTI
Nanotech, pp. 724–729, 2012.
136. H. Agarwal, S. Khandelwal, J.P. Duarte, Y.S. Chauhan, A. Niknejad, and
C. Hu, “BSIM6.1.0 MOSFET Compact Model Technical Manual,” University of
California, Berkeley, CA, 2014.
137. S.K. Saha, “Modelling the effectiveness of computer-aided development
projects in the semiconductor industry,” International Journal of Engineering
Management and Economics, vol. 1, no. 2/3, pp. 162–178, 2010.
Chapter 2
1. A.S. Grove, Physics and Technology of Semiconductor Devices, John Wiley & Sons,
New York, 1967.
2. R.A. Smith, Semiconductors, 2nd edition, Cambridge University Press, London,
1978.
3. B.G. Streetman and S.K. Banerjee, Solid State Electronic Devices, 7th edition,
Prentice Hall, Englewood Cliffs, NJ, 2014.
4. R.M. Warner, Jr. and B.L. Grung, Transistors—Fundamentals for the Integrated
Circuit Engineer, John Wiley & Sons, New York, 1983.
5. S.M. Sze and K.K. Ng, Physics of Semiconductor Devices, John Wiley & Sons,
New York, 2007.
6. R.S. Muller and T.I. Kamins, Device Electronics for Integrated Circuits, John Wiley &
Sons, New York, 1986.
7. R.F. Pierret, Advanced Semiconductor Fundamentals, Addison-Wesley, Reading,
MA, 1987.
8. E.S. Yang, Microelectronic Devices, McGraw-Hill, New York, 1988.
9. S. Wang, Fundamentals of Semiconductor Theory and Devices, Prentice Hall,
Englewood Cliffs, NJ, 1989.
10. M. Zambuto, Semiconductor Devices, McGraw-Hill, New York, 1989.
11. M. Shur, Physics of Semiconductor Devices, Prentice Hall, Englewood Cliffs, NJ, 1990.
12. G.W. Neudeck, The PN Junction Diode, Addison-Wesley, Reading, MA, 1989.
13. D.J. Roulston, Bipolar Semiconductor Devices, McGraw-Hill, New York, 1990.
14. P. Balk, P.G. Burkhardt, and L.V. Gregor, “Orientation dependence of built-in
surface charge on thermally oxidized silicon,” IEEE Proceedings, vol. 53, no. 12,
pp. 2133–2134, 1965.
15. M. Aoki, K. Yano, T. Masuhara, S. Ikeda, and S. Meguro, “Optimum crystallographic orientation of submicron CMOS devices,” in IEEE International Electron
Devices Meeting Technical Digest, pp. 577–580, 1985.
16. M.A. Green, “Intrinsic concentration, effective density of states, and effective
mass in silicon,” Journal of Applied Physics, vol. 67, no. 6, pp. 2944–2954, 1990.
17. N. Arora, MOSFET Models for VLSI Circuit Simulation: Theory and Practice,
Springer-Verlag, Wien, Austria, 1993.
18. L. Nagel and D. Pederson, “Simulation program with integrated circuit emphasis,” University of California, Berkeley, CA, Electronics Research Laboratory
Memorandum No. UCB/ERL M352, 1973.