484
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EPFL-EKV Charge Based Model,” Special session: MOS Transistor: Compact
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128. J.-M. Sallese, M. Bucher, F. Krummenacher, and P. Fazan, “Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact
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for Low-Power and RF IC Design, Wiley, New York, 2006.
132. J.M. Sallese, F. Krummenacher, F. Prégaldiny, Ch. Lallement, A. Roy, and C. Enz,
“A design oriented charge-based current model for symmetric DG MOSFET
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pp. 485–489, 2005.
133. J. He, X. Xi, H. Wan, M. Dunga, M. Chan, and A.M. Niknejad, “BSIM5: An
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134. C.-H. Lin, X. Xi, J. He, R.Q. Williams, M.B. Ketchen, W.E. Haensch, M. Dunga,
S. Balasubramanian, A.M. Niknejad, M. Chan, and C. Hu, “Compact modeling
of FinFETs featuring independent-gate operation mode,” in Proceedings of the
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References
a charge-based design-oriented MOSFET model,” IEEE Transactions on Electron
Devices, vol. 50, no. 2, pp. 406–417, 2003.
120. C. Lallement, M. Bucher, and C. Enz, “Modelling and characterization of nonuniform substrate doping,” Solid-State Electronics, vol. 41, no. 12, pp. 1857–1861, 1997.
121. E. Vittoz, C. Enz, and F. Krummenacher, “A basic property of MOS transistors
and its circuit implications,” in Technical Proceedings, International Workshop on
Compact Modeling, NSTI Nanotech, pp. 246–249, 2003.
122. J.-M. Sallese, “Advancements in DC and RF MOSFET Modeling with the
EPFL-EKV Charge Based Model,” Special session: MOS Transistor: Compact
Modeling and Standardization Aspects, in 8th International Conference MIXDES
2001, 21–23, 2001.
123. M. Bucher, J.-M. Sallese, C. Lallement, W. Grabinski, C.C. Enz, and F.
Krummenacher, “Extended charges modeling for deep submicron CMOS,” in
International Semiconductor Device Research Symposium, pp. 397–400, 1999.
124. A.-S. Porret, J.-M. Sallese, and C. Enz, “A compact non-quasi-static extension of
a charge-based MOS model,” IEEE Transactions on Electron Devices, vol. 48, no. 8,
pp. 1647–1654, 2001.
125. C. Enz, “An MOS transistor model for RF IC design valid in all regions of
operation,” IEEE Transactions on Microwave Theory and Techniques, vol. 50, no. 1,
pp. 342–359, 2002.
126. A.-S. Porret and C.C. Enz, “Non-quasi-static (NQS) thermal noise modelling of
the MOS transistor,” IEE Proceedings Circuits, Devices and Systems, vol. 151, no. 2,
pp. 155–166, 2004.
127. A.S. Roy and C. Enz, “Compact modeling of thermal noise in the MOS transistor,” IEEE Transactions on Electron Devices, vol. 52, no. 4, pp. 611–614, 2005.
128. J.-M. Sallese, M. Bucher, F. Krummenacher, and P. Fazan, “Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact
model,” Solid-State Electronics, vol. 47, no. 4, pp. 677–683, 2003.
129. M. Bucher, “The EKV compact MOS transistor model version 3: Accounting for
deep-submicron aspects,” in NANOTECH Workshop on Compact Modeling, San
Juan, PR, April 23–25, 2002.
130. M. Bucher, A. Bazigos, F. Krummenacher, J.-M. Sallese, C. Enz, and W. Grabinski,
“Advances in MOSFET charges modeling: EKV3.0 MOSFET model,” in
NANOTECH Workshop on Compact Modeling, Anaheim, CA, May 10–12, 2005.
131. C.C. Enz and E.A. Vittoz, Charge-Based MOS Transistor Modeling: The EKV Model
for Low-Power and RF IC Design, Wiley, New York, 2006.
132. J.M. Sallese, F. Krummenacher, F. Prégaldiny, Ch. Lallement, A. Roy, and C. Enz,
“A design oriented charge-based current model for symmetric DG MOSFET
and its correlation with the EKV formalism,” Solid-State Electronics, vol. 49, no. 3,
pp. 485–489, 2005.
133. J. He, X. Xi, H. Wan, M. Dunga, M. Chan, and A.M. Niknejad, “BSIM5: An
advanced charge-based MOSFET model for nanoscale VLSI circuit simulation,” Solid-State Electronics, vol. 51, no. 3, pp. 433–444, 2007.
134. C.-H. Lin, X. Xi, J. He, R.Q. Williams, M.B. Ketchen, W.E. Haensch, M. Dunga,
S. Balasubramanian, A.M. Niknejad, M. Chan, and C. Hu, “Compact modeling
of FinFETs featuring independent-gate operation mode,” in Proceedings of the
IEEE VLSI-TSA Symposium, pp. 120–121, 2005.
135. Y.S. Chauhan, M.A. Karim, S. Venugopalan, S. Khandelwal, P. Thakur,
N. Paydavosi, A.B. Sachid, A. Niknejad, and C. Hu, “BSIM6: Symmetric bulk