482
References
86. W. Wu, T.-L. Chen, G. Gildenblat, and C.C. McAndrew, “Physics-based mathematical conditioning of the MOSFET surface potential equation,” IEEE
Transactions on Electron Devices, vol. 51, no. 7, pp. 1196–1199, 2004.
87. T.-L. Chen and G. Gildenblat, “Analytical approximation for the MOSFET surface potential,” Solid-State Electronics, vol. 45, no. 2, pp. 335–339, 2001.
88. X. Gu, T.-L. Chen, G. Gildenblat, G.O. Workman, S. Veeraraghavan, S. Shapira, and
K. Stiles, “A surface potential-based compact model of n-MOSFET gate-tunneling
current,” IEEE Transactions on Electron Devices, vol. 51, no. 1, pp. 127–135, 2004.
89. J. Victory, Z. Yan, G. Gildenblat, C. McAndrew, and J. Zheng, “A physically
based, scalable MOS varactor model and extraction methodology for RF
applications,” IEEE Transactions on Electron Devices, vol. 52, no. 7, pp. 1343–
1353, 2005.
90. H. Wang and G. Gildenblat, “A robust large signal non-quasi-static MOSFET
model for circuit simulation,” in Proceedings of the IEEE Custom Integrated Circuits
Conference, pp. 5–8, 2004.
91. T. Nguyen and J. Plummer, “Physical mechanisms responsible for short channel
effects in MOS devices,” in IEEE International Electron Devices Meeting Technical
Digest, pp. 596–599, 1981.
92. C. Turchetti, G. Masetti, and Y. Tsividis, “On the small-signal behavior of the
MOS transistor in quasi-static operation,” Solid-State Electronics, vol. 26, no. 10,
pp. 941–949, 1983.
93. H. Wang, T.-L. Chen, and G. Gildenblat, “Quasi-static and nonquasi-static compact MOSFET models based on symmetric linearization of the bulk and inversion charges,” IEEE Transactions on Electron Devices, vol. 50, no. 11, pp. 2262–2272,
2003.
94. P. Bendix, P. Rakers, P. Wagh, L. Lemaitre, W. Grabinski, C.C. McAndrew, X. Gu,
and G. Gildenblat, “RF distortion analysis with compact MOSFET models,” in
Proceedings of the IEEE Custom Integrated Circuits Conference, pp. 9–12, 2004.
95. T. Grotjohn and B. Hofflinger, “A parametric short-channel MOS transistor
model for subthreshold and strong inversion current,” IEEE Journal of SolidState Circuits, vol. 19, no. 1, pp. 100–112, 1984.
96. G. Gildenblat, “One-flux theory of a nonabsorbing barrier,” Journal of Applied
Physics, vol. 91, no. 12, pp. 9883–9886, 2002.
97. H. Wang and G. Gildenblat, “Scattering matrix based compact MOSFET model,”
in IEEE International Electron Devices Meeting Technical Digest, pp. 125–128, 2002.
98. M. Lundstrom and Z. Ren, “Essential physics of carrier transport in nanoscale
MOSFETs,” IEEE Transactions on Electron Devices, vol. 49, no. 1, pp. 133–141, 2002.
99. M.A. Maher and C.A. Mead, “A physical charge-based model for MOS transistors,” in Advanced Research in VLSI, P. Losleben (ed.). MIT Press, Cambridge,
MA, 1987.
100. Y.H. Byun, K. Lee, and M. Shur, “Unified charge control model and subthreshold current in heterostructure field-effect transistors,” IEEE Electron Devices
Letters, vol. 11, no. 1, pp. 50–53, 1990.
101. C.K. Park, C.-Y. Lee, K. Lee, B.-J. Moon, Y.H. Byun, and M. Shur, “A unified current-voltage model for long-channel nMOSFETs,” IEEE Transactions on Electron
Devices, vol. 38, no. 2, pp. 399–406, 1991.
102. A.I.A. Cunha, M.C. Schneider, and C. Galup-Montoro, “An explicit physical
model for the long-channel MOS transistor including small-signal parameters,” Solid-State Electronics, vol. 38, no. 11, pp. 1945–1952, 1995.
References
86. W. Wu, T.-L. Chen, G. Gildenblat, and C.C. McAndrew, “Physics-based mathematical conditioning of the MOSFET surface potential equation,” IEEE
Transactions on Electron Devices, vol. 51, no. 7, pp. 1196–1199, 2004.
87. T.-L. Chen and G. Gildenblat, “Analytical approximation for the MOSFET surface potential,” Solid-State Electronics, vol. 45, no. 2, pp. 335–339, 2001.
88. X. Gu, T.-L. Chen, G. Gildenblat, G.O. Workman, S. Veeraraghavan, S. Shapira, and
K. Stiles, “A surface potential-based compact model of n-MOSFET gate-tunneling
current,” IEEE Transactions on Electron Devices, vol. 51, no. 1, pp. 127–135, 2004.
89. J. Victory, Z. Yan, G. Gildenblat, C. McAndrew, and J. Zheng, “A physically
based, scalable MOS varactor model and extraction methodology for RF
applications,” IEEE Transactions on Electron Devices, vol. 52, no. 7, pp. 1343–
1353, 2005.
90. H. Wang and G. Gildenblat, “A robust large signal non-quasi-static MOSFET
model for circuit simulation,” in Proceedings of the IEEE Custom Integrated Circuits
Conference, pp. 5–8, 2004.
91. T. Nguyen and J. Plummer, “Physical mechanisms responsible for short channel
effects in MOS devices,” in IEEE International Electron Devices Meeting Technical
Digest, pp. 596–599, 1981.
92. C. Turchetti, G. Masetti, and Y. Tsividis, “On the small-signal behavior of the
MOS transistor in quasi-static operation,” Solid-State Electronics, vol. 26, no. 10,
pp. 941–949, 1983.
93. H. Wang, T.-L. Chen, and G. Gildenblat, “Quasi-static and nonquasi-static compact MOSFET models based on symmetric linearization of the bulk and inversion charges,” IEEE Transactions on Electron Devices, vol. 50, no. 11, pp. 2262–2272,
2003.
94. P. Bendix, P. Rakers, P. Wagh, L. Lemaitre, W. Grabinski, C.C. McAndrew, X. Gu,
and G. Gildenblat, “RF distortion analysis with compact MOSFET models,” in
Proceedings of the IEEE Custom Integrated Circuits Conference, pp. 9–12, 2004.
95. T. Grotjohn and B. Hofflinger, “A parametric short-channel MOS transistor
model for subthreshold and strong inversion current,” IEEE Journal of SolidState Circuits, vol. 19, no. 1, pp. 100–112, 1984.
96. G. Gildenblat, “One-flux theory of a nonabsorbing barrier,” Journal of Applied
Physics, vol. 91, no. 12, pp. 9883–9886, 2002.
97. H. Wang and G. Gildenblat, “Scattering matrix based compact MOSFET model,”
in IEEE International Electron Devices Meeting Technical Digest, pp. 125–128, 2002.
98. M. Lundstrom and Z. Ren, “Essential physics of carrier transport in nanoscale
MOSFETs,” IEEE Transactions on Electron Devices, vol. 49, no. 1, pp. 133–141, 2002.
99. M.A. Maher and C.A. Mead, “A physical charge-based model for MOS transistors,” in Advanced Research in VLSI, P. Losleben (ed.). MIT Press, Cambridge,
MA, 1987.
100. Y.H. Byun, K. Lee, and M. Shur, “Unified charge control model and subthreshold current in heterostructure field-effect transistors,” IEEE Electron Devices
Letters, vol. 11, no. 1, pp. 50–53, 1990.
101. C.K. Park, C.-Y. Lee, K. Lee, B.-J. Moon, Y.H. Byun, and M. Shur, “A unified current-voltage model for long-channel nMOSFETs,” IEEE Transactions on Electron
Devices, vol. 38, no. 2, pp. 399–406, 1991.
102. A.I.A. Cunha, M.C. Schneider, and C. Galup-Montoro, “An explicit physical
model for the long-channel MOS transistor including small-signal parameters,” Solid-State Electronics, vol. 38, no. 11, pp. 1945–1952, 1995.