480
References
54. R.M.D.A. Velghe, D.B.M. Klaassen, and F.M. Klaassen, “MOS 9 model,”
Unclassified report NL-UR 003/94, Philips Electronics N.V., Amsterdam, the
Netherlands, 1994.
55. N. Paydavosi, T.H. Morsged, D.D. Lu, W. Yang, M.V. Dunga, X. Xi, J. He, W.
Liu, K. cao, X. Jin, J.J. Ou, M. Chan, A.M. Niknejad, and C. Hu, “BSIM4v4.8.0
MOSFET Model User’s Manual,” University of California, Berkeley, CA, 2013.
56. W. Liu, MOSFET models for SPICE simulation, including BSIM3 and BSIM4, Wiley,
New York, 2001.
57. X. Xi et al., BSIM4.3.0 MOSFET Model—User’s Manual, University of California,
Berkeley, CA, 2003.
58. M. Bagheri and Y. Tsividis, “A small signal dc-to-high-frequency nonquasistatic model for the four-terminal MOSFET valid in all regions of operation,”
IEEE Transactions on Electron Devices, vol. 32, no. 12, pp. 2383–2391, 1985.
59. P.P. Guebels and F. Van de Wiele, “A charge sheet model for small geometry
MOSFET’s,” in IEEE International Electron Devices Meeting Technical Digest,
pp. 211–214, 1981.
60. A.M. Ostrowsky, Solutions of Equations and Systems of Equations, Academic Press,
New York, 1973.
61. C. Turchetti and G. Masetti, “A CAD-oriented analytical MOSFET model for
high-accuracy applications,” IEEE Transactions on Computer-Aided Design of ICAS,
vol. 3, no. 2, pp. 117–122, 1984.
62. N.D. Arora, R. Rios, C.L. Huang, and K. Raol, “PCIM: A physically based continuous short-channel IGFET model for circuit simulation,” IEEE Transactions
on Electron Devices, vol. 41, no. 6, pp. 988–997, 1994.
63. H.-J. Park, P.-K. Ko, and C. Hu, “A charge sheet capacitance model of short channel MOSFETs for SPICE,” IEEE Transactions on Computer-Aided Design, vol. 10,
no. 3, pp. 376–389, 1991.
64. J.W. Sleight and R. Rios, “A continuous compact MOSFET model for SOI with
automatic transitions between fully and partially depleted device behavior,” in
IEEE International Electron Devices Meeting Technical Digest, pp. 143–246, 1996.
65. R. Rios, N.D. Arora, C.-L. Huang, N. Khalil, J. Faricelli, and L. Gruber, “A physical
compact MOSFET model including quantum mechanical effects for statistical
circuit design applications,” in IEEE International Electron Devices Meeting Technical
Digest, pp. 937–940, 1995.
66. M. Miura-Mattausch and H. Jacobs, “Analytical model for circuit simulation with quarter micron metal-oxide semiconductor field-effect transistors:
Subthreshold characteristics,” Japanese Journal of Applied Physics, vol. 29, no. 12 A,
pp. L2279–L2282, 1990.
67. M. Miura-Mattausch, “Analytical MOSFET model for quarter micron technologies,” IEEE Transactions on Computer-Aided Design, vol. 13, no. 5, pp. 610–615, 1994.
68. M. Miura-Mattausch, U. Feldmann, A. Rahm, M. Bollu, and D. Savignac,
“Unified complete MOSFET model for analysis of digital and analog circuits,”
IEEE Transactions on Computer-Aided Design, vol. 15, no. 1, pp. 1–7, 1996.
69. H. Uneo, S. Jinbou, H. Kawano, K. Morikawa, N. Nakayama, A. Miura-Mattausch,
and H.J. Mattausch, “Drift-diffusion-based modeling of the non-quasi-static
small-signal response for RF-MOSFET applications,” in International Conference
on Simulation of Semiconductor Processes and Devices, pp. 71–74, 2002.
70. J. Watts, C. McAndrew, C. Enz, C. Galup-Montoro, G. Gildenblat, C. Hu, R.
van Langevelde, M. Miura-Mattausch, R. Rios, and C.-T. Sah, “Advanced
References
54. R.M.D.A. Velghe, D.B.M. Klaassen, and F.M. Klaassen, “MOS 9 model,”
Unclassified report NL-UR 003/94, Philips Electronics N.V., Amsterdam, the
Netherlands, 1994.
55. N. Paydavosi, T.H. Morsged, D.D. Lu, W. Yang, M.V. Dunga, X. Xi, J. He, W.
Liu, K. cao, X. Jin, J.J. Ou, M. Chan, A.M. Niknejad, and C. Hu, “BSIM4v4.8.0
MOSFET Model User’s Manual,” University of California, Berkeley, CA, 2013.
56. W. Liu, MOSFET models for SPICE simulation, including BSIM3 and BSIM4, Wiley,
New York, 2001.
57. X. Xi et al., BSIM4.3.0 MOSFET Model—User’s Manual, University of California,
Berkeley, CA, 2003.
58. M. Bagheri and Y. Tsividis, “A small signal dc-to-high-frequency nonquasistatic model for the four-terminal MOSFET valid in all regions of operation,”
IEEE Transactions on Electron Devices, vol. 32, no. 12, pp. 2383–2391, 1985.
59. P.P. Guebels and F. Van de Wiele, “A charge sheet model for small geometry
MOSFET’s,” in IEEE International Electron Devices Meeting Technical Digest,
pp. 211–214, 1981.
60. A.M. Ostrowsky, Solutions of Equations and Systems of Equations, Academic Press,
New York, 1973.
61. C. Turchetti and G. Masetti, “A CAD-oriented analytical MOSFET model for
high-accuracy applications,” IEEE Transactions on Computer-Aided Design of ICAS,
vol. 3, no. 2, pp. 117–122, 1984.
62. N.D. Arora, R. Rios, C.L. Huang, and K. Raol, “PCIM: A physically based continuous short-channel IGFET model for circuit simulation,” IEEE Transactions
on Electron Devices, vol. 41, no. 6, pp. 988–997, 1994.
63. H.-J. Park, P.-K. Ko, and C. Hu, “A charge sheet capacitance model of short channel MOSFETs for SPICE,” IEEE Transactions on Computer-Aided Design, vol. 10,
no. 3, pp. 376–389, 1991.
64. J.W. Sleight and R. Rios, “A continuous compact MOSFET model for SOI with
automatic transitions between fully and partially depleted device behavior,” in
IEEE International Electron Devices Meeting Technical Digest, pp. 143–246, 1996.
65. R. Rios, N.D. Arora, C.-L. Huang, N. Khalil, J. Faricelli, and L. Gruber, “A physical
compact MOSFET model including quantum mechanical effects for statistical
circuit design applications,” in IEEE International Electron Devices Meeting Technical
Digest, pp. 937–940, 1995.
66. M. Miura-Mattausch and H. Jacobs, “Analytical model for circuit simulation with quarter micron metal-oxide semiconductor field-effect transistors:
Subthreshold characteristics,” Japanese Journal of Applied Physics, vol. 29, no. 12 A,
pp. L2279–L2282, 1990.
67. M. Miura-Mattausch, “Analytical MOSFET model for quarter micron technologies,” IEEE Transactions on Computer-Aided Design, vol. 13, no. 5, pp. 610–615, 1994.
68. M. Miura-Mattausch, U. Feldmann, A. Rahm, M. Bollu, and D. Savignac,
“Unified complete MOSFET model for analysis of digital and analog circuits,”
IEEE Transactions on Computer-Aided Design, vol. 15, no. 1, pp. 1–7, 1996.
69. H. Uneo, S. Jinbou, H. Kawano, K. Morikawa, N. Nakayama, A. Miura-Mattausch,
and H.J. Mattausch, “Drift-diffusion-based modeling of the non-quasi-static
small-signal response for RF-MOSFET applications,” in International Conference
on Simulation of Semiconductor Processes and Devices, pp. 71–74, 2002.
70. J. Watts, C. McAndrew, C. Enz, C. Galup-Montoro, G. Gildenblat, C. Hu, R.
van Langevelde, M. Miura-Mattausch, R. Rios, and C.-T. Sah, “Advanced