437
Compact Model Library for Circuit Simulation
.lib ‘lib’ TT (or SS, FF, FS, and SF)
.param globalmismatchflag = 0
$ disable MC mismatch
.param globalsigmavtflag = 1
$ enable fixed V th mismatch
offset
.param globalmcflag = 0
$ disable MC systematic variation
Figure 12.6a shows the simulated corner points along with the simulated TT
values of nMOSFET on current, IONN versus pMOSFET on current, IONP
for an advanced CMOS technology.
7.50E−04
3.5E−04
4.0E−04
4.5E−04
5.0E−04
5.5E−04
8.50E−04
Statistical corners
FF
TT
SF
FS
SS
9.50E−04
IONN (A/μm)
(a)
IONP (A/μm)
1.15E−03
1.05E−03
7.50E−04
3.5E−04
4.0E−04
4.5E−04
5.0E−04
5.5E−04
8.50E−04
MC (global + local)
Statistical corners
MC (local only)
MC (global only)
FF
TT
SF
FS
SS
9.50E−04
IONN (A/μm)
(b)
IONP (A/μm)
1.15E−03
1.05E−03
FIGURE 12.6
Simulated IONN versus IONP of a typical CMOS technology obtained by HSPICE circuit
CAD using a model card similar to ex1mod0p1.l: (a) corner simulation and (b) MC analysis with
simulated corner values superimposed.