432
Compact Models for Integrated Circuit Design
TABLE 12.2
Example Corner Parameters in the Compact Model Library: Only a Selected List of nMOSFET Model Parameters is Shown to
Illustrate the Corner Modeling Technique in BSIM4 Model Library
Compact Model
Parameter
Extracted
Typical
Value (TT)
Instance
Parameter
TT
SS (WS)
FF (WP)
SF (WZ)
FS (WO)
Statistical
(delta)
Value
delta
(%)
Value
(delta)
delta
(%)
Value
(delta)
Value
(delta)
Value
(delta)
TOXE/TOXM
1.667E-09
toxen_svt
1.667E-09
2.6
1.710E-09
−2.6
1.6237E-09
1.667E-09
1.667E-09
4.2948E-11
TOXP
1.770E-09
toxpn_svt
1.770E-09
2.6
1.816E-09
−2.6
1.724E-09
1.770E-09
1.770E-09
4.5613E-11
XL
1.000E-08
dxln_svt
0
*
2.000E-09
*
−2.000E-09
1.000E-09
−1.0000E-09
2.0000E-09
XW
0
dxwn_svt
0
*
−5.000E-09
*
5.000E-09
−5.000E-09
5.000E-09
−5.0000E-09
VTH0
0.3827
dvthn_svt
0
*
−0.0079
*
0.0021
−0.0053
0.00138
−7.9330E-03
RDSW
1.597E+02
drdswn_svt 0
3.0
4.7916
−3.0
−4.7916
0
0
4.7916E+00
K1
0.5658
dk1n_svt
0
2.0
0.0113
−2.0
−0.0113
0
0
1.1317E-02
CJS/CJD
3.201E-03
cjn_svt
3.201E-03
3.0
3.297E-03
−3.0
3.105E-03
3.297E-03
3.105E-03
9.6030E-05
CJSWS/CJSWD
1.000E-14
cjswn_svt
1.000E-14
3.0
1.030E-14
−3.0
9.700E-15
1.030E-14
9.700E-15
3.0000E-16
CJSWGS/CJSWGD 1.938E-10
cjswgn_svt
1.938E-10
3.0
1.996E-10
−3.0
1.880E-10
1.997E-10
1.880E-10
5.8149E-12
CGSO/CGDO
6.206E-11
cgon_svt
6.206E-11
−3.0
6.020E-11
3.0
6.392E-11
6.020E-11
6.392E-11
−1.8619E-12
CGDL/CGSL
5.228E-11
cgln_svt
5.228E-11
−3.0
5.071E-11
3.0
5.385E-11
5.07E-11
5.385E-11
−1.5684E-12