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Compact Models for Integrated Circuit Design
Exercises
7.1 Use the expression for the inversion charge from the MOS Level 1
model to calculate and plot the thermal noise PSD as a function of the channel length at room temperature for nMOSFET
and pMOSFET devices of channel length, 100 < L < 1000 nm;
W = 1000 nm. Given that the surface mobilities for electrons and
holes are 600 cm 2 V −1 sec −1 and 400 cm 2 V −1 sec −1 , respectively.
7.2 Complete the mathematical steps to derive the flicker noise PSD
given in Equation 7.27. Clearly state any assumptions you make.
7.3 Use the subthreshold region drain current expression (Equation
4.122) to derive the diffusion resistance in the channel given by
Equation 7.55. Clearly state any of the assumptions you make.
Compact Models for Integrated Circuit Design
Exercises
7.1 Use the expression for the inversion charge from the MOS Level 1
model to calculate and plot the thermal noise PSD as a function of the channel length at room temperature for nMOSFET
and pMOSFET devices of channel length, 100 < L < 1000 nm;
W = 1000 nm. Given that the surface mobilities for electrons and
holes are 600 cm 2 V −1 sec −1 and 400 cm 2 V −1 sec −1 , respectively.
7.2 Complete the mathematical steps to derive the flicker noise PSD
given in Equation 7.27. Clearly state any assumptions you make.
7.3 Use the subthreshold region drain current expression (Equation
4.122) to derive the diffusion resistance in the channel given by
Equation 7.55. Clearly state any of the assumptions you make.