240
Compact Models for Integrated Circuit Design
∂ ′
∂ ′
′ = −
∂
′
∂
′
−
=−
∂
∫
∫
I y t
y
dy
W
Q y t
t
dy
I y t I t
W
Q
y
i
y
i
( , )
( , )
( , ) ( , )
0
0
0
or
( ( , )
′
∂
′
∫
y t
t
dy
y
0
(6.41)
Again, integrating Equation 6.41 along the entire length of the channel, we get
I y t dy
I t dy
W
Q y t
t
dy dy
L
L
i
y
L
( , )
( , )
( , )
0
0
0
0
0
∫
∫
∫
∫
−
=−
∂
′
∂
′
(6.42)
Since the integration is at any instant t, the right-hand side of the above equation can be rewritten by taking the time derivative outside the integral. Then
integrating by parts and simplifying the resulted expression, we can show
I t L
I y t dy
W
L t
y
L
Q dy
L
i
L
( , )
( , )
0
1
1
0
0
=
+
∂
∂
−






∫
∫
(6.43)
Equation 6.43 is the expression for the channel current at the position y = 0 at
any time t, that is, the total current flowing through the source contact. The
first term on the right-hand side is the average transport current in the channel at time t, that is, the DC current under quasistatic operation. Comparing
Equation 6.43 with the expression for i s (t) in Equation 6.4, we find that the
charge Q S associated with the source is
Q
W
y
L
Q dy
S
i
L
= −
−






∫
1
0
(6.44)
An expression similar to Equation 6.43 can be derived for the drain current
and the charge Q D associated with the drain can be shown as
Q
W
y
L
Q dy
D
i
L
= −
∫
0
(6.45)
Thus, we can now calculate the terminal charges Q G , Q B , Q S , and Q D from
Equations 6.6, 6.7, 6.44, and 6.45, respectively, using the expression for Q I
from Equation 6.8 to ensure charge conservation. First of all, we will derive
the charge expressions for the long channel devices and then modify those
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