29 A Novel Approach to Artificial Energy-Loss Free Field Emitters …
421
0
30
60
90
120
150
0
0.5
1
1.5
2
2.5
3
3.5
0
20
40
60
80
100
Current /A
Loading time / min
Temperature /
Loading current
Temperatureon Anode
Temp.on Cathode
electron
Anode
Cathode
Thermocouples
Vacuum chamber
SWCNTs thin film
Conductive electrode
Thermocouples
Fig. 29.5 Current fluctuations under 2.75 kV DC loading and time-dependent thermal changes
over 100 min
yet been designed. The increased crystallinity of the SWCNTs prevented them from
attenuating under a large FE current.
29.4 Conclusions and outlook
We have succeeded to apply high crystallized SWCNTs as planar FE sources for the
first time ever. The homogeneous dispersion process with high crystallized SWCNTs
is one of the essential elements required to fabricate electronic devices with a wet
process. The developed thin films employing the SWCNTs as field emitters improve
FE properties with low power consumption. However, conventional SWCNTs used
in various electrical applications currently have carbon network defects that prevent
the FE electron emission. From the above discussion for FE properties in this study,
we examined the electric conductive in a SWCNT by using the inelastic electron
tunneling model with energy barriers based on the crystal defects in a SWCNT.
Moreover, we have succeeded in obtaining a long FE radioactive life-time with
a high loading FE current density by employing high crystallized SWCNTs. In this
study, our FE devices did not even reach to their radioactive half-time during 1000 h
with high FE current density, and we could ascertain the superior potential of high
crystallized SWCNTs compared to other CNTs, as shown in Fig. 29.6 (Thuesen
2001; Bormashov et al. 2003; Xiang et al. 2005; Sheshin et al. 1999; Saito and
Uemura 2000; Liu et al. 2007; Sung et al. 2008; Lee et al. 2008; Hu et al. 2010;
Cho et al. 2007; Rao et al. 2000; Xu and Brandes 1999). Also, as the SWCNTs
used as field emitters exhibited almost identical homogeneous dispersion states,
their FE properties could be examined and directly compared in this study. We then
421
0
30
60
90
120
150
0
0.5
1
1.5
2
2.5
3
3.5
0
20
40
60
80
100
Current /A
Loading time / min
Temperature /
Loading current
Temperatureon Anode
Temp.on Cathode
electron
Anode
Cathode
Thermocouples
Vacuum chamber
SWCNTs thin film
Conductive electrode
Thermocouples
Fig. 29.5 Current fluctuations under 2.75 kV DC loading and time-dependent thermal changes
over 100 min
yet been designed. The increased crystallinity of the SWCNTs prevented them from
attenuating under a large FE current.
29.4 Conclusions and outlook
We have succeeded to apply high crystallized SWCNTs as planar FE sources for the
first time ever. The homogeneous dispersion process with high crystallized SWCNTs
is one of the essential elements required to fabricate electronic devices with a wet
process. The developed thin films employing the SWCNTs as field emitters improve
FE properties with low power consumption. However, conventional SWCNTs used
in various electrical applications currently have carbon network defects that prevent
the FE electron emission. From the above discussion for FE properties in this study,
we examined the electric conductive in a SWCNT by using the inelastic electron
tunneling model with energy barriers based on the crystal defects in a SWCNT.
Moreover, we have succeeded in obtaining a long FE radioactive life-time with
a high loading FE current density by employing high crystallized SWCNTs. In this
study, our FE devices did not even reach to their radioactive half-time during 1000 h
with high FE current density, and we could ascertain the superior potential of high
crystallized SWCNTs compared to other CNTs, as shown in Fig. 29.6 (Thuesen
2001; Bormashov et al. 2003; Xiang et al. 2005; Sheshin et al. 1999; Saito and
Uemura 2000; Liu et al. 2007; Sung et al. 2008; Lee et al. 2008; Hu et al. 2010;
Cho et al. 2007; Rao et al. 2000; Xu and Brandes 1999). Also, as the SWCNTs
used as field emitters exhibited almost identical homogeneous dispersion states,
their FE properties could be examined and directly compared in this study. We then