Nanoscale Electrochemical Studies: How
Can We Use the Atomic Switch
Ilia Valov, Tsuyoshi Hasegawa, Tohru Tsuruoka, Rainer Waser,
and Masakazu Aono
Abstract Scanning tunnelling microscopy (STM) and in particular the Atomic
Switch concept provides a unique opportunity for site invariant, atomically resolved
studies on the electrochemical reaction kinetics, combined with close monitoring of
the surface morphology. This approach can be applied on particular active or defect
sites, but also to larger surface areas, where electrochemically induced changes on
the surface states and nanocluster dynamics are monitored by current-voltage (I-V )
spectroscopy and/or current-displacement (I-z) spectroscopy.
The redox reaction kinetics of areas or sites with different electrocatalytic activity
can be distinguished and independently characterized. By modification of the
Buttler-Volmer equation, we use switching time as a kinetic parameter instead of
current density, where this approach is independent on the electronic partial
conductivity.
Thus, the Atomic Switch concept allows for redox kinetics studies with highest
lateral, mass and charge resolution.
1 Introduction
Since its introduction and invention by Binnig and Rohrer [1, 2], scanning tunnelling
microscope (STM) has been used for characterization and manipulation of electronically conductive surfaces providing unique opportunity for achieving atomic lateral
resolution and precision [3–5]. STM is now an inevitable tool for high resolution in
situ and ex situ studies in the fields such as surface science and (electro)catalysis.
More recent developments have transferred this typically UHV technique to liquids,
establishing the electrochemical STM [6, 7]. In most of its applications STM is used
as a non-invasive tool for observation and/or characterization e.g. to image
I. Valov (*) · R. Waser
Research Centre Jülich, Electronic Materials (PGI-7), Jülich, Germany
e-mail: i.valov@fz-juelich.de
T. Hasegawa · T. Tsuruoka · M. Aono
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials
Science (NIMS), Tsukuba, Ibaraki, Japan
© Springer Nature Switzerland AG 2020
M. Aono (ed.), Atomic Switch, Advances in Atom and Single Molecule Machines,
https://doi.org/10.1007/978-3-030-34875-5_5
73
Can We Use the Atomic Switch
Ilia Valov, Tsuyoshi Hasegawa, Tohru Tsuruoka, Rainer Waser,
and Masakazu Aono
Abstract Scanning tunnelling microscopy (STM) and in particular the Atomic
Switch concept provides a unique opportunity for site invariant, atomically resolved
studies on the electrochemical reaction kinetics, combined with close monitoring of
the surface morphology. This approach can be applied on particular active or defect
sites, but also to larger surface areas, where electrochemically induced changes on
the surface states and nanocluster dynamics are monitored by current-voltage (I-V )
spectroscopy and/or current-displacement (I-z) spectroscopy.
The redox reaction kinetics of areas or sites with different electrocatalytic activity
can be distinguished and independently characterized. By modification of the
Buttler-Volmer equation, we use switching time as a kinetic parameter instead of
current density, where this approach is independent on the electronic partial
conductivity.
Thus, the Atomic Switch concept allows for redox kinetics studies with highest
lateral, mass and charge resolution.
1 Introduction
Since its introduction and invention by Binnig and Rohrer [1, 2], scanning tunnelling
microscope (STM) has been used for characterization and manipulation of electronically conductive surfaces providing unique opportunity for achieving atomic lateral
resolution and precision [3–5]. STM is now an inevitable tool for high resolution in
situ and ex situ studies in the fields such as surface science and (electro)catalysis.
More recent developments have transferred this typically UHV technique to liquids,
establishing the electrochemical STM [6, 7]. In most of its applications STM is used
as a non-invasive tool for observation and/or characterization e.g. to image
I. Valov (*) · R. Waser
Research Centre Jülich, Electronic Materials (PGI-7), Jülich, Germany
e-mail: i.valov@fz-juelich.de
T. Hasegawa · T. Tsuruoka · M. Aono
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials
Science (NIMS), Tsukuba, Ibaraki, Japan
© Springer Nature Switzerland AG 2020
M. Aono (ed.), Atomic Switch, Advances in Atom and Single Molecule Machines,
https://doi.org/10.1007/978-3-030-34875-5_5
73