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microscope. Nature. 352(6336), 600–603 (1991)
12. Li, C.Z., Tao, N.J.: Quantum transport in metallic nanowires fabricated by electrochemical
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13. Terabe, K., Hasegawa, T., Nakayama, T., Aono, M.: Quantized conductance atomic switch.
Nature. 433(7021), 47–50 (2005)
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18. Gonzalez-Velo, Y., Barnaby, H.J., Kozicki, M.N., Gopalan, C., Holbert, K.: Total ionizing dose
retention capability of conductive bridging random access memory. IEEE Electron Device Lett.
35(2), 205–207 (2014)
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S., Van Buskirk, M.: Conductive-bridge memory (CBRAM) with excellent high-temperature
retention. In: 2013 IEEE International Electron Devices Meeting. IEEE, pp. 30.1.1–30.1.4
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single event induced soft errors in programmable metallization cell memory. IEEE Trans. Nucl.
Sci. 61(6), 3557–3563 (2014)
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Single-event effect performance of a conductive-bridge memory EEPROM. IEEE Trans. Nucl.
Sci. 62(6), 2703–2708 (2015)
22. Okamoto, K., Tada, M., Sakamoto, T., Miyamura, M., Banno, N., Iguchi, N., Hada, H.:
Conducting mechanism of atom switch with polymer solid-electrolyte. Tech. Digest. 1,
279–282 (2011)
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Maekawa, K., Banno, N., Miyamura, M., Okamoto, K., Iguchi, N., Oda, H., Kamohara, S.,
Yamagata, Y., Sugii, N., Hada, H., Ogasahara, Y.: A silicon-on-thin-buried-oxide CMOS
microcontroller with embedded atom-switch ROM. IEEE Micro. 35(6), 13–23 (2015)
24. Miyamura, M., Sakamoto, T., Tada, M., Banno, N., Okamoto, K., Iguchi, N., Hada, H.:
Low-power programmable-logic cell arrays using nonvolatile complementary atom switch.
In: 15th International Symposium on Quality Electronic Design. IEEE, pp. 330–334 (2014)
25. Miyamura, M., Sakamoto, T., Tsuji, Y., Tada, M., Banno, N., Okamoto, K., Iguchi, N., Hada,
H.: 0.5-V highly power-efficient programmable logic using nonvoltile configuration switch in
BEOL. In: 23rd ACM/SIGDA International Symposium on Field-Programmable Gate Arrays
(2015)
26. Miyamura, M., Tada, M., Sakamoto, T., Banno, N., Okamoto, K., Iguchi, N., Hada, H.: First
demonstration of logic mapping on nonvolatile programmable cell using complementary atom
switch. In: 2012 International Electron Devices Meeting. IEEE, pp. 10.6.1–10.6.4 (2012)
27. The stopping and range of ions in matter. http://www.srim.org/
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K. Takeuchi et al.