25. Tappertzhofen, S., Valov, I., Tsuruoka, T., Hasegawa, T., Waser, R., Aono, M.: Generic
relevance of counter charges for cation-based nanoscale resistive switching memory. ACS
Nano. 7, 6396 (2013)
26. Tsuruoka, T., Valov, I., Tappertzhofen, S., van den Hulk, J., Hasegawa, T., Waver, R., Aono,
M.: Redox reactions at Cu(Ag)/Ta 2 O 5 interfaces and the effects of Ta 2 O 5 film density on the
forming process in atomic switch structures. Adv. Funct. Mater. 25, 6374 (2015)
27. Tsuruoka, T., Terabe, K., Hasegawa, T., Valov, I., Waser, R., Aono, M.: Effects of moisture on
the switching characteristics of oxide-based, gapless-type atomic switches. Adv. Funct. Mater.
22, 70 (2012)
28. Mannequin, C., Tsuruoka, T., Hasegawa, T., Aono, M.: Composition of thin Ta 2 O 5 films
deposited by different methods and the effects of humidity on their resistive switching behavior.
Jpn. J. Appl. Phys. 55, 06GG08 (2016)
29. Tsuruoka, T., Valov, I., Mannequin, C., Hasegawa, T., Waser, R., Aono, M.: Humidity effects
on the redox reactions and ionic transport in a Cu/Ta 2 O 5 atomic switch structure. Jpn. J. Appl.
Phys. 55, 06GJ09 (2016)
30. Tsuruoka, T., Hasegawa, T., Valov, I., Waser, R., Aono, M.: Rate-limiting processes in the fast
SET operation of a gapless-type Cu-Ta 2 O 5 atomic switch. AIP Adv. 3, 032114 (2013)
31. Mannequin, C., Tsuruoka, T., Hasegawa, T., Aono, M.: Identification and roles of
nonstoichiometric oxygen in amorphous Ta 2 O 5 thin films deposited by electron beam and
sputtering processes. Appl. Surf. Sci. 385, 426 (2016)
32. Tsuruoka, T., Hasegawa, T., Aono, M.: Synaptic plasticity and memristive behavior operated
by atomic switches. https://doi.org/10.1109/CNN.2014.6888615 (2014)
33. Strukov, D.B., Snider, G.S., Stewart, D.R., Williams, R.S.: The missing memristor found.
Nature. 453, 80 (2008)
34. Yang, J.J., Pickett, M.D., Li, X., Ohlberg, D.A.A., Stewart, D.R., Williams, R.S.: Memristive
switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol. 3, 429 (2008)
35. Magleby, K.L.: The effect of repetitive stimulation on facilitation of transmitter release at the
frog neuromuscular junction. J. Physiol. 234, 327 (1973)
36. Atluri, P.P., Regehr, W.G.: Determinants of the time course of facilitation at the granule cell to
Purkinje cell synapse. J. Neurosci. 16, 5661 (1996)
37. Yang, R., Terabe, K., Liu, G., Tsuruoka, T., Hasegawa, T., Gimzewski, J.K., Aono, M.:
On-demand nanodevice with electrical and neuromorphic multifunction realized by local ion
migration. ACS Nano. 6, 9515 (2012)
38. Yang, R., Terabe, K., Tsuruoka, T., Hasegawa, T., Aono, M.: Oxygen migration process in the
interfaces during bipolar resistance switching behavior of WO 3-x -based nanoionics devices.
Appl. Phys. Lett. 100, 231603 (2012)
39. Tan, Z.H., Yang, R., Terabe, K., Yin, X.B., Zhang, X.D., Guo, X.: Synaptic metaplasticity
realized in oxide memristive devices. Adv. Mater. 28, 377 (2016)
40. Yang, R., Terabe, K., Guo, X.: The Joule heating effect on the electroforming process for the
resistive switching behavior in Pt/WO 3-x /Pt memristive devices, oral presentation. In:
PRiME2016, Honolulu, HI, 2016.10.05
Artificial Synapses Realized by Atomic Switch Technology
199
relevance of counter charges for cation-based nanoscale resistive switching memory. ACS
Nano. 7, 6396 (2013)
26. Tsuruoka, T., Valov, I., Tappertzhofen, S., van den Hulk, J., Hasegawa, T., Waver, R., Aono,
M.: Redox reactions at Cu(Ag)/Ta 2 O 5 interfaces and the effects of Ta 2 O 5 film density on the
forming process in atomic switch structures. Adv. Funct. Mater. 25, 6374 (2015)
27. Tsuruoka, T., Terabe, K., Hasegawa, T., Valov, I., Waser, R., Aono, M.: Effects of moisture on
the switching characteristics of oxide-based, gapless-type atomic switches. Adv. Funct. Mater.
22, 70 (2012)
28. Mannequin, C., Tsuruoka, T., Hasegawa, T., Aono, M.: Composition of thin Ta 2 O 5 films
deposited by different methods and the effects of humidity on their resistive switching behavior.
Jpn. J. Appl. Phys. 55, 06GG08 (2016)
29. Tsuruoka, T., Valov, I., Mannequin, C., Hasegawa, T., Waser, R., Aono, M.: Humidity effects
on the redox reactions and ionic transport in a Cu/Ta 2 O 5 atomic switch structure. Jpn. J. Appl.
Phys. 55, 06GJ09 (2016)
30. Tsuruoka, T., Hasegawa, T., Valov, I., Waser, R., Aono, M.: Rate-limiting processes in the fast
SET operation of a gapless-type Cu-Ta 2 O 5 atomic switch. AIP Adv. 3, 032114 (2013)
31. Mannequin, C., Tsuruoka, T., Hasegawa, T., Aono, M.: Identification and roles of
nonstoichiometric oxygen in amorphous Ta 2 O 5 thin films deposited by electron beam and
sputtering processes. Appl. Surf. Sci. 385, 426 (2016)
32. Tsuruoka, T., Hasegawa, T., Aono, M.: Synaptic plasticity and memristive behavior operated
by atomic switches. https://doi.org/10.1109/CNN.2014.6888615 (2014)
33. Strukov, D.B., Snider, G.S., Stewart, D.R., Williams, R.S.: The missing memristor found.
Nature. 453, 80 (2008)
34. Yang, J.J., Pickett, M.D., Li, X., Ohlberg, D.A.A., Stewart, D.R., Williams, R.S.: Memristive
switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol. 3, 429 (2008)
35. Magleby, K.L.: The effect of repetitive stimulation on facilitation of transmitter release at the
frog neuromuscular junction. J. Physiol. 234, 327 (1973)
36. Atluri, P.P., Regehr, W.G.: Determinants of the time course of facilitation at the granule cell to
Purkinje cell synapse. J. Neurosci. 16, 5661 (1996)
37. Yang, R., Terabe, K., Liu, G., Tsuruoka, T., Hasegawa, T., Gimzewski, J.K., Aono, M.:
On-demand nanodevice with electrical and neuromorphic multifunction realized by local ion
migration. ACS Nano. 6, 9515 (2012)
38. Yang, R., Terabe, K., Tsuruoka, T., Hasegawa, T., Aono, M.: Oxygen migration process in the
interfaces during bipolar resistance switching behavior of WO 3-x -based nanoionics devices.
Appl. Phys. Lett. 100, 231603 (2012)
39. Tan, Z.H., Yang, R., Terabe, K., Yin, X.B., Zhang, X.D., Guo, X.: Synaptic metaplasticity
realized in oxide memristive devices. Adv. Mater. 28, 377 (2016)
40. Yang, R., Terabe, K., Guo, X.: The Joule heating effect on the electroforming process for the
resistive switching behavior in Pt/WO 3-x /Pt memristive devices, oral presentation. In:
PRiME2016, Honolulu, HI, 2016.10.05
Artificial Synapses Realized by Atomic Switch Technology
199