3. Nayak, A., Ohno, T., Tsuruoka, T., Terabe, K., Hasegawa, T., Gimzewski, J.K., Aono, M.:
Controlling the synaptic plasticity of a Cu 2 S gap-type atomic switch. Adv. Funct. Mater. 22,
3606 (2012)
4. Tsuruoka, T., Hasegawa, T., Terabe, K., Aono, M.: Conductance quantization and synaptic
behavior of a Ta 2 O 5 -based atomic switch. Nanotechnology. 23, 435705 (2012)
5. Yang, R., Terabe, K., Yao, Y., Tsuruoka, T., Hasegawa, T., Gimzewski, J.K., Aono, M.:
Synaptic plasticity and memory functions achieved in a WO 3-x -based nanoionics device by
using the principle of atomic switch operation. Nanotechnology. 24, 384003 (2013)
6. Hasegawa, T., Ohno, T., Terabe, K., Tsuruoka, T., Nakayama, T., Gimzewski, J.K., Aono, M.:
Learning abilities achieved by a single solid-state atomic switch. Adv. Mater. 22, 1831 (2010)
7. Hasegawa, T., Nayak, A., Ohno, T., Terabe, K., Tsuruoka, T., Gimzewski, J.K., Aono, M.:
Memristive operations demonstrated by gap-type atomic switches. Appl. Phys. A. 102,
811 (2011)
8. Jo, S.H., Chang, T., Ebong, I., Bhadviya, B.B., Mazumder, P., Lu, W.: Nanoscale memristor
device as synapse in neuromorphic systems. Nano Lett. 10, 1297 (2010)
9. Atkinson, R.C., Shiffrin, R.M.: Human memory: A proposed system and its control processes.
In: Spence, K.W., Spence, J.T. (eds.) The Psychology of Learning and Motivation: Advances in
Research and Theory, vol. 2, pp. 89–195. Academic, New York (1968)
10. Ebbinghaus, H.: In: Ruger, H.A., Bussenius, C.E. (eds. trans.) Memory: A Contribution to
Experimental Psychology. Teachers College, Columbia University, New York (1913)
11. Rubin, D.C., Wenzel, A.E.: One hundred years of forgetting: A quantitative description of
retention. Psychol. Rev. 103, 734 (1996)
12. Ohno, T., Hasegawa, T., Nayak, A., Tsuruoka, T., Gimzewski, J.K., Aono, M.: Sensory and
short-term memory formations observed in a Ag 2 S gap-type atomic switch. Appl. Phys. Lett.
99, 203108 (2011)
13. Kundu, M., Hasegawa, T., Terabe, K., Aono, M.: Effect of sulfurization conditions on structural
and electrical properties of copper sulfide films. J. Appl. Phys. 103, 073523 (2008)
14. Urban, J., Sack-Kongehl, H., Weiss, K.: HREM studies of the structure and the oxidation
process of copper clusters created by inert gas aggregation. Z. Phys. D. 36, 73 (1996)
15. Ruuska, H., Tapani, A.P.: MP2 study on water adsorption on cluster models of Cu(111).
J. Phys. Chem. B. 108, 2614 (2004)
16. ter Maat, H., Hogendoorn, J.A., Versteeg, G.F.: The removal of hydrogen sulfide from gas
streams using an aqueous metal sulfate absorbent: Part II. The regeneration of copper sulfide to
copper oxide-an experimental study. Sep. Purif. Technol. 43, 199 (2005)
17. Nayak, A., Tsuruoka, T., Terabe, K., Hasegawa, T., Aono, M.: Theoretical investigation of
kinetics of a Cu 2 S-based gap-type atomic switch. Appl. Phys. Lett. 98, 233501 (2011)
18. Nayak, A., Tsuruoka, T., Terabe, K., Hasegawa, T., Aono, M.: Switching kinetics of a Cu 2 Sbased gap-type atomic switch. Nanotechnology. 22, 235201 (2011)
19. Schiff, S.J., Somjen, G.G.: The effects of temperature on synaptic transmission in hippocampal
tissue slices. Brain Res. 345, 279 (1985)
20. Klyachko, V.A., Stevens, C.F.: Temperature-dependent shift of balance among the components
of short-term plasticity in hippocampal synapses. J. Neurosci. 26, 6945 (2006)
21. Tsuruoka, T., Terabe, K., Hasegawa, T., Aono, M.: Forming and switching mechanisms of a
cation-migration-based oxide resistive memory. Nanotechnology. 21, 425205 (2010)
22. Tsuruoka, T., Terabe, K., Hasegawa, T., Aono, M.: Temperature effects on the switching
kinetics of a Cu-Ta 2 O 5 -based atomic switch. Nanotechnology. 22, 254013 (2011)
23. Tsuruoka, T., Hasegawa, T., Terabe, K., Aono, M.: Operating mechanism and resistive
switching characteristics of two- and three-terminal atomic switches using a thin metal oxide
layer. J. Electroceram. 39, 143 (2017). https://doi.org/10.1007/s10832-016-0063-9
24. Hasegawa, T., Terabe, K., Sakamoto, K., Aono, M.: Nanoionics switching devices: “Atomic
switches”. MRS Bull. 34, 929 (2009)
198
T. Tsuruoka et al.
Controlling the synaptic plasticity of a Cu 2 S gap-type atomic switch. Adv. Funct. Mater. 22,
3606 (2012)
4. Tsuruoka, T., Hasegawa, T., Terabe, K., Aono, M.: Conductance quantization and synaptic
behavior of a Ta 2 O 5 -based atomic switch. Nanotechnology. 23, 435705 (2012)
5. Yang, R., Terabe, K., Yao, Y., Tsuruoka, T., Hasegawa, T., Gimzewski, J.K., Aono, M.:
Synaptic plasticity and memory functions achieved in a WO 3-x -based nanoionics device by
using the principle of atomic switch operation. Nanotechnology. 24, 384003 (2013)
6. Hasegawa, T., Ohno, T., Terabe, K., Tsuruoka, T., Nakayama, T., Gimzewski, J.K., Aono, M.:
Learning abilities achieved by a single solid-state atomic switch. Adv. Mater. 22, 1831 (2010)
7. Hasegawa, T., Nayak, A., Ohno, T., Terabe, K., Tsuruoka, T., Gimzewski, J.K., Aono, M.:
Memristive operations demonstrated by gap-type atomic switches. Appl. Phys. A. 102,
811 (2011)
8. Jo, S.H., Chang, T., Ebong, I., Bhadviya, B.B., Mazumder, P., Lu, W.: Nanoscale memristor
device as synapse in neuromorphic systems. Nano Lett. 10, 1297 (2010)
9. Atkinson, R.C., Shiffrin, R.M.: Human memory: A proposed system and its control processes.
In: Spence, K.W., Spence, J.T. (eds.) The Psychology of Learning and Motivation: Advances in
Research and Theory, vol. 2, pp. 89–195. Academic, New York (1968)
10. Ebbinghaus, H.: In: Ruger, H.A., Bussenius, C.E. (eds. trans.) Memory: A Contribution to
Experimental Psychology. Teachers College, Columbia University, New York (1913)
11. Rubin, D.C., Wenzel, A.E.: One hundred years of forgetting: A quantitative description of
retention. Psychol. Rev. 103, 734 (1996)
12. Ohno, T., Hasegawa, T., Nayak, A., Tsuruoka, T., Gimzewski, J.K., Aono, M.: Sensory and
short-term memory formations observed in a Ag 2 S gap-type atomic switch. Appl. Phys. Lett.
99, 203108 (2011)
13. Kundu, M., Hasegawa, T., Terabe, K., Aono, M.: Effect of sulfurization conditions on structural
and electrical properties of copper sulfide films. J. Appl. Phys. 103, 073523 (2008)
14. Urban, J., Sack-Kongehl, H., Weiss, K.: HREM studies of the structure and the oxidation
process of copper clusters created by inert gas aggregation. Z. Phys. D. 36, 73 (1996)
15. Ruuska, H., Tapani, A.P.: MP2 study on water adsorption on cluster models of Cu(111).
J. Phys. Chem. B. 108, 2614 (2004)
16. ter Maat, H., Hogendoorn, J.A., Versteeg, G.F.: The removal of hydrogen sulfide from gas
streams using an aqueous metal sulfate absorbent: Part II. The regeneration of copper sulfide to
copper oxide-an experimental study. Sep. Purif. Technol. 43, 199 (2005)
17. Nayak, A., Tsuruoka, T., Terabe, K., Hasegawa, T., Aono, M.: Theoretical investigation of
kinetics of a Cu 2 S-based gap-type atomic switch. Appl. Phys. Lett. 98, 233501 (2011)
18. Nayak, A., Tsuruoka, T., Terabe, K., Hasegawa, T., Aono, M.: Switching kinetics of a Cu 2 Sbased gap-type atomic switch. Nanotechnology. 22, 235201 (2011)
19. Schiff, S.J., Somjen, G.G.: The effects of temperature on synaptic transmission in hippocampal
tissue slices. Brain Res. 345, 279 (1985)
20. Klyachko, V.A., Stevens, C.F.: Temperature-dependent shift of balance among the components
of short-term plasticity in hippocampal synapses. J. Neurosci. 26, 6945 (2006)
21. Tsuruoka, T., Terabe, K., Hasegawa, T., Aono, M.: Forming and switching mechanisms of a
cation-migration-based oxide resistive memory. Nanotechnology. 21, 425205 (2010)
22. Tsuruoka, T., Terabe, K., Hasegawa, T., Aono, M.: Temperature effects on the switching
kinetics of a Cu-Ta 2 O 5 -based atomic switch. Nanotechnology. 22, 254013 (2011)
23. Tsuruoka, T., Hasegawa, T., Terabe, K., Aono, M.: Operating mechanism and resistive
switching characteristics of two- and three-terminal atomic switches using a thin metal oxide
layer. J. Electroceram. 39, 143 (2017). https://doi.org/10.1007/s10832-016-0063-9
24. Hasegawa, T., Terabe, K., Sakamoto, K., Aono, M.: Nanoionics switching devices: “Atomic
switches”. MRS Bull. 34, 929 (2009)
198
T. Tsuruoka et al.