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memristive systems. Nat. Nanotechnol. 11, 67–74 (2016)
47. Davies, J.A., Domeij, B., Pringle, J.P.S., Brown, F.: The migration of metal and oxygen during
anodic film formation. J. Electrochem. Soc. 112, 675–680 (1965)
48. Khalil, N., Leach, J.S.L.: The anodic oxidation of valve metals—I. determination of ionic
transport numbers by a-spectrometry. Electrochim. Acta. 31, 1279–1285 (1986)
49. Chandrasekharan, R., Park, I., Masel, R.I., Shannon, M.A.: Thermal oxidation of tantalum films
at various oxidation states from 300 to 700
C. J. Appl. Phys. 98, 114908 (2005)
50. Oshima, M., Toyoda, S., Horiba, K., Yasuhara, R., Kumigashira, H.: Synchrotron radiation
nano-spectroscopy of dielectrics for LSI and ReRAM. ECS Trans. 41, 453 (2011)
51. Yang, J.J., Strukov, D.B., Stewart, D.R.: Memristive devices for computing. Nat. Nanotechnol.
8, 13–24 (2013)
52. Yalon, E., Gavrilov, A., Cohen, S., Ritter, D.: Validation and extension of local temperature
evaluation of conductive filaments in RRAM devices. IEEE Trans. Electron Devices. 62,
3671–3677 (2015)
53. Sharma, A.A., Noman, M., Abdelmoula, M., Skowronski, M., Bain, J.A.: Electronic instabilities leading to electroformation of binary metal oxide-based resistive switches. Adv. Funct.
Mater. 24, 5522–5529 (2014)
54. Li, W., Ando, Y., Watanabe, S.: Cu diffusion in amorphous Ta 2 O 5 studied with a simplified
neural network potential. J. Phys. Soc. Jpn. 86, 104004 (2017)
55. Li, W., Ando, Y., Minamitani, E., Watanabe, S.: Study of Li atom diffusion in amorphous
Li 3 PO 4 with neural network potential. J. Chem. Phys. 147, 214106 (2017)
Atomistic Simulations for Understanding Microscopic Mechanism of. . .
125