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37. Yang, J.J., Zhang, M.X., Strachan, J.P., Miao, F., Pickett, M.D., Kelley, R.D., MedeirosRibeiro, G., Williams, R.S.: High switching endurance in TaO x memristive devices. Appl.
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capacitors with ultrathin Ta 2 O 5 films by zero-bias thermally stimulated current spectroscopy.
Appl. Phys. Lett. 83, 2835 (2003)
40. Ivanov, M.V., Perevalov, T.V., Aliev, V.S., Gritsenko, V.A., Kaichev, V.V.: Effect of dielectric
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platinum. J. Appl. Phys. 110, 024115 (2011)
41. Lau, W.S.: Engineering implication of the correlation between the leakage current in high-k
dielectric materials and the electronic defect states detected by zero-bias thermally simulated
current spectroscopy. China Semiconductor Technology International Conference (CSTIC).
(2018). https://doi.org/10.1109/CSTIC.2018.8369248
42. Garg, S.P., Krishnamurthy, N., Awasthi, A., Venkatraman, M.: The O-Ta (oxygen-tantalum)
system. J. Phase Equilib. 17, 63–77 (1996)
43. Alderman, O.L.G., Benmore, C.J., Neuefeind, J., Coillet, E., Mermet, A., Martinez, V.,
Tamalonis, A., Weber, R.: Amorphous tantala and its relationship with the molten state.
Phys. Rev. Mater. 2, 043602 (2018)
44. Jiang, A.Q., Tyson, T.A., Axe, L.: The structure of small Ta clusters. J. Phys. Condens. Matter.
17, 1841 (2005)
45. Park, T.H., Kwon, Y.J., Kim, H.J., Woo, H.C., Kim, G.S., An, C.H., Kim, C.H., Kwon, D.E.,
Hwang, C.S.: Balancing the source and sink of oxygen vacancies for the resistive switching
memory. ACS Appl. Mater. Interfaces. 10, 21445–21450 (2018)
124
S. Watanabe and B. Xiao
(2013)
29. Miao, F., Strachan, J.P., Yang, J.J., Zhang, M.X., Goldfarb, I., Torrezan, A.C., Eschbach, P.,
Kelley, R.D., Medeiros-Ribeiro, G., Williams, R.S.: Anatomy of a nanoscale conduction
channel reveals the mechanism of a high-performance memristor. Adv. Mater. 23,
5633–5640 (2011)
30. Jagath, A.L., Kumar, T.N., Almurib, H.A. Modeling of current conduction during RESET
phase of Pt/Ta 2 O 5 /TaO x /Pt bipolar resistive RAM devices. In: IEEE 7
th Non-Volatile Memory
Systems and Applications Symposium (NVMSA). (2018). https://doi.org/10.1109/NVMSA.
2018.00014
31. Yang, J.J., Kobayashi, N.P., Strachan, J.P., Zhang, M.X., Ohlberg, D.A.A., Pickett, M.D., Li,
Z., Medeiros-Ribeiro, G., Williams, R.S.: Dopant control by atomic layer deposition in oxide
films for memristive switches. Chem. Mater. 23, 123–125 (2011)
32. Yang, J.J., Strachan, J.P., Miao, F., Zhang, M.X., Pickett, M., Yi, W., Ohlberg, D., MedeirosRibeiro, G., Williams, R.: Metal/TiO 2 interfaces for memristive switches. Appl. Phys. A Mater.
Sci. Process. 102, 785–789 (2011)
33. Xu, N., Gao, B., Liu, L.F., Sun, B., Liu, X.Y., Han, R.Q., Kang, J.F., Yu, B.: A unified physical
model of switching behavior in oxide-based RRAM. Symposium on VLSI Technology Digest
of technical papers, pp. 100–101 (2008)
34. Hur, J.H., Lee, M.J., Lee, C.B., Kim, Y.B., Kim, C.J.: Modeling for bipolar resistive memory
switching in transition-metal oxides. Phys. Rev. B. 82, 155321 (2010)
35. Wei, Z., Takagi, T., Kanzawa, Y., Katoh, Y., Ninomiya, T., Kawai, K., Muraoka, S., Mitani, S.,
Katayama, K., Fujii, S., Miyanaga, R., Kawashima, Y., Mikawa, T., Shimakawa, K., Aono, K.:
Demonstration of high-DENSITY ReRAM ensuring 10-year retention at 85
C. Based on a
newly developed reliability model. IEDM11–721, 31.4.1–31.1.4 (2011)
36. Choi, S., Yang, Y.C., Lu, W.: Random telegraph noise and resistance switching analysis of
oxide based resistive memory. Nanoscale. 7, 400–404 (2014)
37. Yang, J.J., Zhang, M.X., Strachan, J.P., Miao, F., Pickett, M.D., Kelley, R.D., MedeirosRibeiro, G., Williams, R.S.: High switching endurance in TaO x memristive devices. Appl.
Phys. Lett. 97, 232102 (2010)
38. Heyd, J., Scuseria, G.E., Ernzerhof, M.: Hybrid functionals based on a screened coulomb
potential. J. Chem. Phys. 118, 8207 (2003)
39. Lau, W.S., Leong, L.L., Han, T., Sandler, N.P.: Detection of oxygen vacancy defect states in
capacitors with ultrathin Ta 2 O 5 films by zero-bias thermally stimulated current spectroscopy.
Appl. Phys. Lett. 83, 2835 (2003)
40. Ivanov, M.V., Perevalov, T.V., Aliev, V.S., Gritsenko, V.A., Kaichev, V.V.: Effect of dielectric
stoichiometry and interface chemical state on band alignment between tantalum oxide and
platinum. J. Appl. Phys. 110, 024115 (2011)
41. Lau, W.S.: Engineering implication of the correlation between the leakage current in high-k
dielectric materials and the electronic defect states detected by zero-bias thermally simulated
current spectroscopy. China Semiconductor Technology International Conference (CSTIC).
(2018). https://doi.org/10.1109/CSTIC.2018.8369248
42. Garg, S.P., Krishnamurthy, N., Awasthi, A., Venkatraman, M.: The O-Ta (oxygen-tantalum)
system. J. Phase Equilib. 17, 63–77 (1996)
43. Alderman, O.L.G., Benmore, C.J., Neuefeind, J., Coillet, E., Mermet, A., Martinez, V.,
Tamalonis, A., Weber, R.: Amorphous tantala and its relationship with the molten state.
Phys. Rev. Mater. 2, 043602 (2018)
44. Jiang, A.Q., Tyson, T.A., Axe, L.: The structure of small Ta clusters. J. Phys. Condens. Matter.
17, 1841 (2005)
45. Park, T.H., Kwon, Y.J., Kim, H.J., Woo, H.C., Kim, G.S., An, C.H., Kim, C.H., Kwon, D.E.,
Hwang, C.S.: Balancing the source and sink of oxygen vacancies for the resistive switching
memory. ACS Appl. Mater. Interfaces. 10, 21445–21450 (2018)
124
S. Watanabe and B. Xiao