Fig. 10
STM experiment with electrochemical polarization causing reduction of the initial surface (left) at
V set
¼ 5 V (middle) and re-oxidation at negative tip
bias of
V reset
¼ –5 V. The Ta
2 O
5
film (deposited by RF sputtering on 100 nm metallic Ta) has been reduced in the vacuum chamber by annealing in vacuum at
300
C for 5 min in order to enable STM experiments. The
figure is reproduced from [29]
Nanoscale Electrochemical Studies: How Can We Use the Atomic Switch
91
STM experiment with electrochemical polarization causing reduction of the initial surface (left) at
V set
¼ 5 V (middle) and re-oxidation at negative tip
bias of
V reset
¼ –5 V. The Ta
2 O
5
film (deposited by RF sputtering on 100 nm metallic Ta) has been reduced in the vacuum chamber by annealing in vacuum at
300
C for 5 min in order to enable STM experiments. The
figure is reproduced from [29]
Nanoscale Electrochemical Studies: How Can We Use the Atomic Switch
91