132
M. Jasiurkowska-Delaporte
Fig. 8 Comparison of data obtained for melt and cold isothermal crystallization in 5P-EtFLEt-P5
at selected temperatures as indicated. a The normalized dielectric strength ε N (t) as a function of
time during isothermal crystallization. The schematic representation of the crystal/nematic interface
is shown in left corner of the panel. b Avrami plot: ln[−ln(1−ε N )] versus ln(t) for the data
presented in the upper panel. c Avrami–Avramov plot: time dependence of normalized dielectric
strength ε N (t) and its derivative versus the natural logarithm of the time at T = 273 K. Adapted
with permission from [20] (Copyright © 2018 American Chemical Society)
ε N (t) = 1 − exp
−K (t − t 0 )
n A
(10)
where K denotes a constant depending on the crystallization temperature and geometry of the sample, t 0 is the induction time and n is the Avrami exponent depending
M. Jasiurkowska-Delaporte
Fig. 8 Comparison of data obtained for melt and cold isothermal crystallization in 5P-EtFLEt-P5
at selected temperatures as indicated. a The normalized dielectric strength ε N (t) as a function of
time during isothermal crystallization. The schematic representation of the crystal/nematic interface
is shown in left corner of the panel. b Avrami plot: ln[−ln(1−ε N )] versus ln(t) for the data
presented in the upper panel. c Avrami–Avramov plot: time dependence of normalized dielectric
strength ε N (t) and its derivative versus the natural logarithm of the time at T = 273 K. Adapted
with permission from [20] (Copyright © 2018 American Chemical Society)
ε N (t) = 1 − exp
−K (t − t 0 )
n A
(10)
where K denotes a constant depending on the crystallization temperature and geometry of the sample, t 0 is the induction time and n is the Avrami exponent depending