156
2 Holographic Microscopy of Phase and Diffuse Objects …
Fig. 2.47 Optical scheme of the device for the study of thermoelastic deformations of injective
heterolasers (a): 1—He–Ne laser; 2, 9—the non-transmitting mirror; 10–12—the splitters; 13, 14—
the microobjectives; 15—the object of study, 16–18—the lense; 19—the hologram) and the scheme
of attachment of the laser diode 15 on the copper cooling vessel 20 (b): 13, 14—the microobjective.
Reprinted from [136] with permission
to remove a number of restrictions during measurements constrained by the cooling
vessel. In particular, the temperature distribution along the cooling vessel can have
a heterogeneous character.
The methods described above were tested while defining the heating temperature
of the laser diodes operating in the continuous mode of excitation. In the experiments,
there were used GaAs/AlGaAs injection lasers with strip geometry of the contact
fixed with the indium solder on the copper cooling vessel.
One part of the samples was mounted on a temperature compensating gasket made
of pseudoalloy. Heating of the laser crystal active area relative to environmental
temperature was calculated according to the formula:
2 Holographic Microscopy of Phase and Diffuse Objects …
Fig. 2.47 Optical scheme of the device for the study of thermoelastic deformations of injective
heterolasers (a): 1—He–Ne laser; 2, 9—the non-transmitting mirror; 10–12—the splitters; 13, 14—
the microobjectives; 15—the object of study, 16–18—the lense; 19—the hologram) and the scheme
of attachment of the laser diode 15 on the copper cooling vessel 20 (b): 13, 14—the microobjective.
Reprinted from [136] with permission
to remove a number of restrictions during measurements constrained by the cooling
vessel. In particular, the temperature distribution along the cooling vessel can have
a heterogeneous character.
The methods described above were tested while defining the heating temperature
of the laser diodes operating in the continuous mode of excitation. In the experiments,
there were used GaAs/AlGaAs injection lasers with strip geometry of the contact
fixed with the indium solder on the copper cooling vessel.
One part of the samples was mounted on a temperature compensating gasket made
of pseudoalloy. Heating of the laser crystal active area relative to environmental
temperature was calculated according to the formula: