2.1 TFET Introduction
7
Fig. 2.3 TFET and
MOSFET I D = f (V G )
TFET
High mobility (III-V)
FDSOI MOSFET
V G
I
D
Fig. 2.4 Ambipolar effect:
TFET conducts for both
positive and negative V G
for very small absolute values of V DS below 0 there is still current flowing due to
BTBT, which only stops when V DS gets below −100 to −200 mV. The conduction
mechanism changes from drift to diffusion for |V DS | >= 0.6 V corresponding to the
turn-on voltage of the diode. The transition between the two conduction mechanisms
creates a Negative Differential Resistance (NDR) region that can have interesting
applications in circuit design as described in the following chapters.
7
Fig. 2.3 TFET and
MOSFET I D = f (V G )
TFET
High mobility (III-V)
FDSOI MOSFET
V G
I
D
Fig. 2.4 Ambipolar effect:
TFET conducts for both
positive and negative V G
for very small absolute values of V DS below 0 there is still current flowing due to
BTBT, which only stops when V DS gets below −100 to −200 mV. The conduction
mechanism changes from drift to diffusion for |V DS | >= 0.6 V corresponding to the
turn-on voltage of the diode. The transition between the two conduction mechanisms
creates a Negative Differential Resistance (NDR) region that can have interesting
applications in circuit design as described in the following chapters.