4
1 Introduction
technology [18]. These two types of devices are compatible for fabrication in a
single FDSOI-CMOS process.
In Chap. 7 single-ended sensing techniques and adaptive read techniques are
explored for SRAMs and original SRAM, DRAM, and CAM architectures presented in Chaps. 3, 4, and 6, respectively.
Finally, Chap. 8 offers a perspective of innovative applications of TFET’s unique
features to hybrid systems with tighter cointegration of TFET and CMOS.
1 Introduction
technology [18]. These two types of devices are compatible for fabrication in a
single FDSOI-CMOS process.
In Chap. 7 single-ended sensing techniques and adaptive read techniques are
explored for SRAMs and original SRAM, DRAM, and CAM architectures presented in Chaps. 3, 4, and 6, respectively.
Finally, Chap. 8 offers a perspective of innovative applications of TFET’s unique
features to hybrid systems with tighter cointegration of TFET and CMOS.