1.2 Advances in Functional Nanomaterials Sciences
11
Moreover, a novel 2D electron gas (2DEG) of Dirac fermion nature was reported
which forms at the interface of CdTe/PbTe heterojunctions.
In addition, C. Guo from the Center for Correlated Matter of the ZJU explained
how a novel Weyl semimetal was envisioned through heterostructuring, which hinted
at a new path towards the realisation of other exotic topological materials via heterostructure fabrication.
1.2.3 Optoelectronic Devices
Miniaturisation not only promises more compact and energy efficient optical devices
but also enables novel device concepts. This is where quantum structures and
nanophotonics come into play. It becomes clear that functionalised nanomaterials
contribute strongly to the developments in this field.
As a classical example, G. Qian from the State Key Laboratory of Functional
Materials for Informatic in Shanghai reported how InAs quantum-dot lasers with
high device performances were achieved when epitaxially integrated on a germanium
substrate. Grown by gas-source molecular-beam epitaxy (MBE), those quantum-dot
laser-diode structures emitting in the spectral range of 1.0–1.3 µm exhibited a very
low lasing-threshold current density and high output power.
A truly nanophotonic case was represented by the semiconductor nanowire photonic devices, which were studied for long by L. Tong and his co-workers at the State
Key Laboratory of Modern Optical Instrumentation and the ZJU. Recent progress
on nanowire optical modulators based on a graphene-coated ZnO nanowire and on
an on-chip integrated CdS nanowire were summarised by him, and single-nanowire
ultrafast optical correlators based on transverse second-harmonic generation from
CdS and CdTe nanowires were reported.
A topical bridge towards quantum technologies was made by nanostructured
semiconductors and their applications in classical and quantum communication
at the telecommunications wavelength of 1.5 µm. J.P. Reithmaier from the University of Kassel highlighted different types of 1.5-µm quantum-dot gain materials for fibre-based applications that were developed with regard to classical highperformance optoelectronic devices as well as for core elements of long-haul
quantum-communication systems.
Entering the nonclassical world, quantum technologies have revealed themselves
as an emerging topic, both, generally and within the topic landscape of the symposium.
From the beginning, S. Reitzenstein from the Technische Universität Berlin outlined the advantages of nonclassical light emission from quantum-dot–microlens
structures. It was shown how deterministic fabrication of bright quantum-dot-based
single-photon sources and on-chip waveguide structures by means of in-situ electronbeam lithography promised better yield and faster implementation in quantumcryptography schemes. In this context, the optical properties and application potential
for quantum networks were discussed.
11
Moreover, a novel 2D electron gas (2DEG) of Dirac fermion nature was reported
which forms at the interface of CdTe/PbTe heterojunctions.
In addition, C. Guo from the Center for Correlated Matter of the ZJU explained
how a novel Weyl semimetal was envisioned through heterostructuring, which hinted
at a new path towards the realisation of other exotic topological materials via heterostructure fabrication.
1.2.3 Optoelectronic Devices
Miniaturisation not only promises more compact and energy efficient optical devices
but also enables novel device concepts. This is where quantum structures and
nanophotonics come into play. It becomes clear that functionalised nanomaterials
contribute strongly to the developments in this field.
As a classical example, G. Qian from the State Key Laboratory of Functional
Materials for Informatic in Shanghai reported how InAs quantum-dot lasers with
high device performances were achieved when epitaxially integrated on a germanium
substrate. Grown by gas-source molecular-beam epitaxy (MBE), those quantum-dot
laser-diode structures emitting in the spectral range of 1.0–1.3 µm exhibited a very
low lasing-threshold current density and high output power.
A truly nanophotonic case was represented by the semiconductor nanowire photonic devices, which were studied for long by L. Tong and his co-workers at the State
Key Laboratory of Modern Optical Instrumentation and the ZJU. Recent progress
on nanowire optical modulators based on a graphene-coated ZnO nanowire and on
an on-chip integrated CdS nanowire were summarised by him, and single-nanowire
ultrafast optical correlators based on transverse second-harmonic generation from
CdS and CdTe nanowires were reported.
A topical bridge towards quantum technologies was made by nanostructured
semiconductors and their applications in classical and quantum communication
at the telecommunications wavelength of 1.5 µm. J.P. Reithmaier from the University of Kassel highlighted different types of 1.5-µm quantum-dot gain materials for fibre-based applications that were developed with regard to classical highperformance optoelectronic devices as well as for core elements of long-haul
quantum-communication systems.
Entering the nonclassical world, quantum technologies have revealed themselves
as an emerging topic, both, generally and within the topic landscape of the symposium.
From the beginning, S. Reitzenstein from the Technische Universität Berlin outlined the advantages of nonclassical light emission from quantum-dot–microlens
structures. It was shown how deterministic fabrication of bright quantum-dot-based
single-photon sources and on-chip waveguide structures by means of in-situ electronbeam lithography promised better yield and faster implementation in quantumcryptography schemes. In this context, the optical properties and application potential
for quantum networks were discussed.