10
1 Introduction
interfaces, hybrids of inorganic–organic materials and molecules on surfaces of metals, or topological insulators were discussed.
For instance, experiments on ultrafast electron dynamics of interfaces between
metals and organic semiconductors, surfaces of topological insulators and TMDCs
were discussed by U. Höfer from the UMR. Among others, he explained how timeresolved two-photon photoemission served as a characterisation method that combined femtosecond pump–probe techniques with photoelectron spectroscopy. With
such method, his group obtained detailed information about the ultrafast dynamics
of electrons excited into surface- and interface-specific states of these systems.
Regarding selected-area engineering of correlated vanadium oxides and their
nanostructures without any lithography and chemicals, C. Xin from the National
Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai, discussed
how nanoscale selected-area chemical doping became promising for constructing
functional materials and devices.
Clearly, numerous nanomaterials systems received considerable attention throughout the symposium. One such system formed by self-prepared crystalline thin organic
films and molecular heterostructures was presented as a model system for detailed
optoelectronic studies of elementary processes in organic electronic devices by G.
Witte from the UMR, whose research is focused on molecular nanostructures.
Not less important remain colloidal quantum dots (cQDs) as model nanoclusters
in which quantisation effects strongly determine optical properties. L. Hu from the
Jiangnan University in Wuxi outlined how the emission of CdS cQDs could be tuned
with silver particles. Giving a hybrid II-VI cQDs silver nanocrystal as an example,
the luminescence of the hybrid was shown to be modifiable by tuning the ratio of the
two components when mixing the components during synthesis quantitatively.
Complementary to the various other spectroscopic measurement schemes used to
obtain most of the information discussed about optoelectronic materials, M. Koch
from the UMR also conducted material investigation using THz spectroscopy, a well
established technique nowadays. He highlighted THz time-domain spectroscopy as a
tool for basic research, as well as for non-destructive testing in the industry, providing
several examples for both application fields. For instance, the techniques developed
in his group allowed him to take a look at the formation of crystals out of solution,
or to analyse arbitrarily shaped samples.
The domain of topological and structural effects was briefly discussed as well. Y.P.
Feng from the National University of Singapore shed light on the search for a wider
gap topological insulator and the enhancement of charge-to-spin conversion. Via firstprinciples calculations, layered hexagonal Bi 2 S 3 was predicted to be convertible into
a topological insulator by pressure. Other calculations indicated that the coexistence
of topological surface states and the Rashba effect contributed to the enhanced chargeto-spin conversion in a Bi 2 Se 3 /Ag/CoFeB system.
Furthermore, investigations on the topological nature of the PbTe crystal and
the interface of a CdTe/PbTe heterostructure were summarised by the symposium’s
co-host, H.Z. Wu from the State Key Laboratory of Silicon Materials and ZJU.
Theoretical and experimental results demonstrated that by incorporating Te antisites into the host lattice, PbTe could become a topological crystalline insulator.
1 Introduction
interfaces, hybrids of inorganic–organic materials and molecules on surfaces of metals, or topological insulators were discussed.
For instance, experiments on ultrafast electron dynamics of interfaces between
metals and organic semiconductors, surfaces of topological insulators and TMDCs
were discussed by U. Höfer from the UMR. Among others, he explained how timeresolved two-photon photoemission served as a characterisation method that combined femtosecond pump–probe techniques with photoelectron spectroscopy. With
such method, his group obtained detailed information about the ultrafast dynamics
of electrons excited into surface- and interface-specific states of these systems.
Regarding selected-area engineering of correlated vanadium oxides and their
nanostructures without any lithography and chemicals, C. Xin from the National
Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai, discussed
how nanoscale selected-area chemical doping became promising for constructing
functional materials and devices.
Clearly, numerous nanomaterials systems received considerable attention throughout the symposium. One such system formed by self-prepared crystalline thin organic
films and molecular heterostructures was presented as a model system for detailed
optoelectronic studies of elementary processes in organic electronic devices by G.
Witte from the UMR, whose research is focused on molecular nanostructures.
Not less important remain colloidal quantum dots (cQDs) as model nanoclusters
in which quantisation effects strongly determine optical properties. L. Hu from the
Jiangnan University in Wuxi outlined how the emission of CdS cQDs could be tuned
with silver particles. Giving a hybrid II-VI cQDs silver nanocrystal as an example,
the luminescence of the hybrid was shown to be modifiable by tuning the ratio of the
two components when mixing the components during synthesis quantitatively.
Complementary to the various other spectroscopic measurement schemes used to
obtain most of the information discussed about optoelectronic materials, M. Koch
from the UMR also conducted material investigation using THz spectroscopy, a well
established technique nowadays. He highlighted THz time-domain spectroscopy as a
tool for basic research, as well as for non-destructive testing in the industry, providing
several examples for both application fields. For instance, the techniques developed
in his group allowed him to take a look at the formation of crystals out of solution,
or to analyse arbitrarily shaped samples.
The domain of topological and structural effects was briefly discussed as well. Y.P.
Feng from the National University of Singapore shed light on the search for a wider
gap topological insulator and the enhancement of charge-to-spin conversion. Via firstprinciples calculations, layered hexagonal Bi 2 S 3 was predicted to be convertible into
a topological insulator by pressure. Other calculations indicated that the coexistence
of topological surface states and the Rashba effect contributed to the enhanced chargeto-spin conversion in a Bi 2 Se 3 /Ag/CoFeB system.
Furthermore, investigations on the topological nature of the PbTe crystal and
the interface of a CdTe/PbTe heterostructure were summarised by the symposium’s
co-host, H.Z. Wu from the State Key Laboratory of Silicon Materials and ZJU.
Theoretical and experimental results demonstrated that by incorporating Te antisites into the host lattice, PbTe could become a topological crystalline insulator.