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C. Patrick Collier, Dynamical nonlinear memory capacitance in biomimetic membranes. Nat.
Commun. 10(1), 3239 (2019)
44. S. Battistoni, V. Erokhin, S. Iannotta, Organic memristive devices for perceptron applications.
J. Phys. D Appl. Phys. 51(28), 284002 (2018)
45. I. Valov, M. Kozicki, Non-volatile memories: organic memristors come of age. Nat. Mater.
16(12), 1170 (2017)
46. G. Oster, A note on memristors. IEEE Trans. Circuits Syst. 21(1), 152–152 (1974)
47. J.-S. Pei, J.P. Wright, M.D. Todd, S.F. Masri, F. Gay-Balmaz, Understanding memristors
and memcapacitors in engineering mechanics applications. Nonlinear Dyn. 80(1–2), 457–489
(2015)
48. D. Biolek, Z. Biolek, V. Biolkova, Z. Kolka, Reliable modeling of ideal generic memristors
via state-space transformation. Radioengineering 24(2), 393–407 (2015)
49. F. Yang, M.P. Gordon, J.J. Urban, Theoretical framework of the thermal memristor via a
solid-state phase change material. J. Appl. Phys. 125(2), 025109 (2019)
50. J. Joshua Yang, R. Stanley Williams, Memristive devices in computing system: promises and
challenges. ACM J. Emerg. Technol. Comput. Syst. 9(2), 11 (2013)
51. Q. Xia, J. Joshua Yang, Memristive crossbar arrays for brain-inspired computing. Nat. Mater.
18(4), 309–323 (2019)
52. F. Argall, Switching phenomena in titanium oxide thin films. Solid-State Electron. 11(5),
535–541 (1968)
53. D.P. Oxley, Electroforming, switching and memory effects in oxide thin films. Act. Passive
Electron. Compon. 3(4), 217–224 (1977)
54. M.A. Zidan, J.P. Strachan, W.D. Lu, The future of electronics based on memristive systems.
Nat. Electron. 1(1), 22 (2018)
55. J. Joshua Yang, M.D. Pickett, X. Li, D. A.A. Ohlberg, D.R. Stewart, R. Stanley Williams,
Memristive switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol. 3(7),
429 (2008)
56. J.M. Slaughter, Materials for magnetoresistive random access memory. Annu. Rev. Mater.
Res. 39, 277–296 (2009)
57. K.M. Kim, D.S. Jeong, C.S. Hwang, Nanofilamentary resistive switching in binary oxide
system; a review on the present status and outlook. Nanotechnology 22(25), 254002 (2011)
58. K. Terabe, T. Hasegawa, T. Nakayama, M. Aono, Quantized conductance atomic switch.
Nature 433(7021), 47 (2005)
59. T. Prodromakis, B.P. Peh, C. Papavassiliou, C. Toumazou, A versatile memristor model with
nonlinear dopant kinetics. IEEE Trans. Electron. Dev. 58(9), 3099–3105 (2011)
60. S. Benderli, T.A. Wey, On SPICE macromodelling of TiO2 memristors. Electron. Lett. 45(7),
377–379 (2009)
61. Á. Rák, G. Cserey, Macromodeling of the memristor in SPICE. IEEE Trans. Comput.-Aided
Des. Integr. Circuits Syst. 29(4), 632–636 (2010)
62. S. Shin, K. Kim, S.-M. Kang, Compact models for memristors based on charge-flux
constitutive relationships. IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. 29(4), 590–
598 (2010)
63. O. Kavehei, A. Iqbal, Y.S. Kim, K. Eshraghian, S.F. Al-Sarawi, D. Abbott, The fourth
element: characteristics, modelling and electromagnetic theory of the memristor. Proc. Roy.
Soc. A Math. Phys. Eng. Sci. 466(2120), 2175–2202 (2010)
64. T.H. Kim, E.Y. Jang, N.J. Lee, D.J. Choi, K.-J. Lee, J.-T. Jang, J.-S. Choi, S.H. Moon, J.
Cheon, Nanoparticle assemblies as memristors. Nano Lett. 9(6), 2229–2233 (2009)
65. E. Lehtonen, M. Laiho, CNN using memristors for neighborhood connections, in 2010 12th
International Workshop on Cellular Nanoscale Networks and their Applications (CNNA
2010) (IEEE, Piscataway, 2010), pp. 1–4