94
2 Fundamental Properties of Mem-Elements
16. T. Zhang, M. Yin, X. Lu, Y. Cai, Y. Yang, R. Huang, Tolerance of intrinsic device variation
in fuzzy restricted Boltzmann machine network based on memristive nano-synapses. Nano
Futur. 1(1), 015003 (2017)
17. T.W. Hickmott, Low-frequency negative resistance in thin anodic oxide films. J. Appl. Phys.
33(9), 2669–2682 (1962)
18. J.F. Gibbons, W.E. Beadle, Switching properties of thin NiO films. Solid-State Electron.
7(11), 785–790 (1964)
19. J.G. Simmons, R.R. Verderber, New conduction and reversible memory phenomena in thin
insulating films. Proc. R. Soc. Lond. A Math. Phys. Sci. 301(1464), 77–102 (1967)
20. Y.G. Kriger, N.F. Yudanov, I.K. Igumenov, S.B. Vashchenko, Study of test structures of a
molecular memory element. J. Struct. Chem. 34(6), 966–970 (1993)
21. M. Sapoff, R.M. Oppenheim, Theory and application of self-heated thermistors. Proc. IEEE
51(10), 1292–1305 (1963)
22. V.J. Francis, Fundamentals of Discharge Tube Circuits (Methuen, London, 1948)
23. A.L. Hodgkin, A.F. Huxley, A quantitative description of membrane current and its application to conduction and excitation in nerve. J. Physiol. 117(4), 500–544 (1952)
24. F. Corinto, P.P. Civalleri, L.O. Chua, A theoretical approach to memristor devices. IEEE J.
Emerg. Sel. Top. Circuits Syst. 5(2), 123–132 (2015)
25. L. Chua, G. Sirakoulis, A. Adamatzky, (Eds.), Handbook of Memristor Networks. Vol. 1 and
2 (Springer, New York, 2019)
26. J. Vista, A. Ranjan, A simple floating MOS-memristor for high-frequency applications. IEEE
Trans. Very Large Scale Integr. Syst. 27(5), 1186–1195 (2019)
27. E. Solan, K. Ochs, Wave digital emulation of general memristors. Int. J. Circuit Theory Appl.
46(11), 2011–2027 (2018)
28. D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, The missing memristor found. Nature
453(7191), 80–83 (2008)
29. Y.N. Joglekar, S.J. Wolf, The elusive memristor: properties of basic electrical circuits. Eur. J.
Phys. 30(4), 661 (2009)
30. Z. Biolek, D. Biolek, V. Biolkova, SPICE model of memristor with nonlinear dopant drift.
Radioengineering 18(2), 210–214 (2009)
31. F. Corinto, A. Ascoli, A boundary condition-based approach to the modeling of memristor
nanostructures. IEEE Trans. Circuits Syst. I Regul. Pap. 59(11), 2713–2726 (2012)
32. A. Ascoli, F. Corinto, R. Tetzlaff, Generalized boundary condition memristor model. Int. J.
Circuit Theory Appl. 44(1), 60–84 (2016)
33. R. Stanley Williams, How we found the missing memristor. IEEE Spectr. 45(12), 28–35
(2008)
34. S. Kvatinsky, E.G. Friedman, A. Kolodny, U.C. Weiser, TEAM: threshold adaptive memristor
model. IEEE Trans. Circuits Syst. I Regul. Pap. 60(1), 211–221 (2013)
35. G.A. Gibson, S. Musunuru, J. Zhang, K. Vandenberghe, J. Lee, C.-C. Hsieh, W. Jackson, Y.
Jeon, D. Henze, Z. Li, et al., An accurate locally active memristor model for S-type negative
differential resistance in nbox. Appl. Phys. Lett. 108(2), 023505 (2016)
36. F. Corinto, A. Ascoli, Memristive diode bridge with LCR filter. Electron. Lett. 48(14), 824–
825 (2012)
37. A. Ascoli, F. Corinto, R. Tetzlaff, A class of versatile circuits, made up of standard electrical
components, are memristors. Int. J. Circuit Theory Appl. 44(1), 127–146 (2016)
38. M. Itoh, L.O. Chua, Parasitic effects on memristor dynamics. Int. J. Bifurcat. Chaos 26(6),
1630014 (2016)
39. Y.V. Pershin, M. Di Ventra, Memory effects in complex materials and nanoscale systems.
Adv. Phys. 60(2), 145–227 (2011)
40. L.O. Chua, Reply to comment on ‘If it’s pinched it’s a memristor’. Semicond. Sci. Technol.
34(9), 098002 (2019)
41. J. Martinez-Rincon, M. Di Ventra, Y.V. Pershin, Solid-state memcapacitive system with
negative and diverging capacitance. Phys. Rev. B 81(19), 195430 (2010)
2 Fundamental Properties of Mem-Elements
16. T. Zhang, M. Yin, X. Lu, Y. Cai, Y. Yang, R. Huang, Tolerance of intrinsic device variation
in fuzzy restricted Boltzmann machine network based on memristive nano-synapses. Nano
Futur. 1(1), 015003 (2017)
17. T.W. Hickmott, Low-frequency negative resistance in thin anodic oxide films. J. Appl. Phys.
33(9), 2669–2682 (1962)
18. J.F. Gibbons, W.E. Beadle, Switching properties of thin NiO films. Solid-State Electron.
7(11), 785–790 (1964)
19. J.G. Simmons, R.R. Verderber, New conduction and reversible memory phenomena in thin
insulating films. Proc. R. Soc. Lond. A Math. Phys. Sci. 301(1464), 77–102 (1967)
20. Y.G. Kriger, N.F. Yudanov, I.K. Igumenov, S.B. Vashchenko, Study of test structures of a
molecular memory element. J. Struct. Chem. 34(6), 966–970 (1993)
21. M. Sapoff, R.M. Oppenheim, Theory and application of self-heated thermistors. Proc. IEEE
51(10), 1292–1305 (1963)
22. V.J. Francis, Fundamentals of Discharge Tube Circuits (Methuen, London, 1948)
23. A.L. Hodgkin, A.F. Huxley, A quantitative description of membrane current and its application to conduction and excitation in nerve. J. Physiol. 117(4), 500–544 (1952)
24. F. Corinto, P.P. Civalleri, L.O. Chua, A theoretical approach to memristor devices. IEEE J.
Emerg. Sel. Top. Circuits Syst. 5(2), 123–132 (2015)
25. L. Chua, G. Sirakoulis, A. Adamatzky, (Eds.), Handbook of Memristor Networks. Vol. 1 and
2 (Springer, New York, 2019)
26. J. Vista, A. Ranjan, A simple floating MOS-memristor for high-frequency applications. IEEE
Trans. Very Large Scale Integr. Syst. 27(5), 1186–1195 (2019)
27. E. Solan, K. Ochs, Wave digital emulation of general memristors. Int. J. Circuit Theory Appl.
46(11), 2011–2027 (2018)
28. D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, The missing memristor found. Nature
453(7191), 80–83 (2008)
29. Y.N. Joglekar, S.J. Wolf, The elusive memristor: properties of basic electrical circuits. Eur. J.
Phys. 30(4), 661 (2009)
30. Z. Biolek, D. Biolek, V. Biolkova, SPICE model of memristor with nonlinear dopant drift.
Radioengineering 18(2), 210–214 (2009)
31. F. Corinto, A. Ascoli, A boundary condition-based approach to the modeling of memristor
nanostructures. IEEE Trans. Circuits Syst. I Regul. Pap. 59(11), 2713–2726 (2012)
32. A. Ascoli, F. Corinto, R. Tetzlaff, Generalized boundary condition memristor model. Int. J.
Circuit Theory Appl. 44(1), 60–84 (2016)
33. R. Stanley Williams, How we found the missing memristor. IEEE Spectr. 45(12), 28–35
(2008)
34. S. Kvatinsky, E.G. Friedman, A. Kolodny, U.C. Weiser, TEAM: threshold adaptive memristor
model. IEEE Trans. Circuits Syst. I Regul. Pap. 60(1), 211–221 (2013)
35. G.A. Gibson, S. Musunuru, J. Zhang, K. Vandenberghe, J. Lee, C.-C. Hsieh, W. Jackson, Y.
Jeon, D. Henze, Z. Li, et al., An accurate locally active memristor model for S-type negative
differential resistance in nbox. Appl. Phys. Lett. 108(2), 023505 (2016)
36. F. Corinto, A. Ascoli, Memristive diode bridge with LCR filter. Electron. Lett. 48(14), 824–
825 (2012)
37. A. Ascoli, F. Corinto, R. Tetzlaff, A class of versatile circuits, made up of standard electrical
components, are memristors. Int. J. Circuit Theory Appl. 44(1), 127–146 (2016)
38. M. Itoh, L.O. Chua, Parasitic effects on memristor dynamics. Int. J. Bifurcat. Chaos 26(6),
1630014 (2016)
39. Y.V. Pershin, M. Di Ventra, Memory effects in complex materials and nanoscale systems.
Adv. Phys. 60(2), 145–227 (2011)
40. L.O. Chua, Reply to comment on ‘If it’s pinched it’s a memristor’. Semicond. Sci. Technol.
34(9), 098002 (2019)
41. J. Martinez-Rincon, M. Di Ventra, Y.V. Pershin, Solid-state memcapacitive system with
negative and diverging capacitance. Phys. Rev. B 81(19), 195430 (2010)