274
S. Lee
(a)
(b)
Twice reflow
One Ɵme
300C Head
130C Stage
Target: <3um
Fig. 10.15 SEM micrographs of intermetallic thickness measurement: (a) micro bump assembled
using TCB [18] and (b) C4 bump assembled using mass reflow process [17]
Fig. 10.16 Visual micrographs of micro-bump interconnection comparison for interposer attachment to organic substrate: (a) TCB and (b) mass reflow process [19]
contrast, the mass reflowed unit exhibits about a 10 μm warpage due to the “stack-up”
of CTE mismatch values across the package elements.
10.2.3 Fundamentals of Process Materials
10.2.3.1 Introduction
The TCB technology is an enabler for stacking microbumped 3D TSV dies in order
to overcome the technical challenges of finer placement accuracy and minimize the
S. Lee
(a)
(b)
Twice reflow
One Ɵme
300C Head
130C Stage
Target: <3um
Fig. 10.15 SEM micrographs of intermetallic thickness measurement: (a) micro bump assembled
using TCB [18] and (b) C4 bump assembled using mass reflow process [17]
Fig. 10.16 Visual micrographs of micro-bump interconnection comparison for interposer attachment to organic substrate: (a) TCB and (b) mass reflow process [19]
contrast, the mass reflowed unit exhibits about a 10 μm warpage due to the “stack-up”
of CTE mismatch values across the package elements.
10.2.3 Fundamentals of Process Materials
10.2.3.1 Introduction
The TCB technology is an enabler for stacking microbumped 3D TSV dies in order
to overcome the technical challenges of finer placement accuracy and minimize the