RRAM Device Characterizations and Modelling
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Table 1
Comparative analysis of the compact models
Linear ion drift (Hp) Stanford model
Physical electro-thermal
model (PKU)
Marc-Bocquet model
Filament dissolution
model
Device type
Bipolar
Bipolar
Bipolar
Uni/bipolar
Uni/bipolar
Mechanism
Diffusion/drift of V
o
Vacancy generation,
oxygen migration
Generation and
recombination of V
o
Redox and thermally
assisted
diffusion/electrochemical
redox reactions
Joule-heating assisted
diffusion/ion migration
Methodology
Gap length
Gap length
Gap length/widths
Gap length and width
Gap width/length
Conduction
Ohmic
Hopping, ohmic
Hopping, ohmic
Ohmic
Semi-conductive, ohmic
Transient characteristic Yes
Yes
Yes
Not show
Yes
Compatible
Possible with Spice
Verilog-A Spice
Verilog- A Spice
Console/Spice
Console