RRAM Device Characterizations and Modelling
361
Fig. 17 a Simulated CF and b the corresponding resistance varies with switching cycle under
different operation scheme. It demonstrates that the operation scheme will impact on the degradation
type. Reprinted from [48]
the dissolution of CF. Hence, the V O concentration of CF gradually decrease and the
conduction transfer from the metallic to the hopping. Moreover, the O
2− release by
the electrode and sidewall oxide will recombine the V O , which will also lead to the
decrease of V O amount as well as the rupture of CF. Therefore, the current decrease
as time went on.
The endurance degradation can investigated by the developed Monte Carlo simulator by repeatedly simulate the resistive switching like the endurance test. The CF
geometry changing with the switching cycle is simulated and shown in Fig. 17 [48].
The experimental over SET and over RESET endurance degradation behavior are
reproduced by the simulator. It can be found that the gap distance increases with
cycle for the “over RESET” degradation and radius of CF increase with cycle for the
“over SET” degradation. Generally, the simulation of endurance degradation is time
consuming due to the fact that so many switching cycles are calculated.
6 Compact Model
Compact model is very important for the development of new electronic devices
based on new semiconductor technologies. An accurate and comprehensive compact
model acts as an interface between the device physics and system/sub-system design.
Beside phenomenological considerations, compatibility with standardized software
suites employed in the IC industry is also an essential feature for compact model. For
361
Fig. 17 a Simulated CF and b the corresponding resistance varies with switching cycle under
different operation scheme. It demonstrates that the operation scheme will impact on the degradation
type. Reprinted from [48]
the dissolution of CF. Hence, the V O concentration of CF gradually decrease and the
conduction transfer from the metallic to the hopping. Moreover, the O
2− release by
the electrode and sidewall oxide will recombine the V O , which will also lead to the
decrease of V O amount as well as the rupture of CF. Therefore, the current decrease
as time went on.
The endurance degradation can investigated by the developed Monte Carlo simulator by repeatedly simulate the resistive switching like the endurance test. The CF
geometry changing with the switching cycle is simulated and shown in Fig. 17 [48].
The experimental over SET and over RESET endurance degradation behavior are
reproduced by the simulator. It can be found that the gap distance increases with
cycle for the “over RESET” degradation and radius of CF increase with cycle for the
“over SET” degradation. Generally, the simulation of endurance degradation is time
consuming due to the fact that so many switching cycles are calculated.
6 Compact Model
Compact model is very important for the development of new electronic devices
based on new semiconductor technologies. An accurate and comprehensive compact
model acts as an interface between the device physics and system/sub-system design.
Beside phenomenological considerations, compatibility with standardized software
suites employed in the IC industry is also an essential feature for compact model. For