356
P. Huang et al.
Fig. 9 A typical Monte Carlo simulation algorithm flow for Ox-RRAM
potential can be calculated by solving Poisson’s equation as:
∇
2
φ= −
ρ
ε
(7)
where φ is the potential, ρ is charge density within the oxide material.
The resistor network is based on the percolation theory [32, 43]. An example of
a resistor network to calculate the conductance of RRAM is shown in Fig. 10 [44].
The resistive switching layer is divided into the resistor network with cross nodes.
Different particles with different resistivity are located in the network following the
Monte Carlo processes.
The resistance of the node representing the insulating or semiconductive oxide is
nonlinear and can be described as [20]:
P. Huang et al.
Fig. 9 A typical Monte Carlo simulation algorithm flow for Ox-RRAM
potential can be calculated by solving Poisson’s equation as:
∇
2
φ= −
ρ
ε
(7)
where φ is the potential, ρ is charge density within the oxide material.
The resistor network is based on the percolation theory [32, 43]. An example of
a resistor network to calculate the conductance of RRAM is shown in Fig. 10 [44].
The resistive switching layer is divided into the resistor network with cross nodes.
Different particles with different resistivity are located in the network following the
Monte Carlo processes.
The resistance of the node representing the insulating or semiconductive oxide is
nonlinear and can be described as [20]: