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P. Huang et al.
Fig. 7 In situ TEM observation of the threshold switching process of Ag atoms with and without
electrical bias. When the external electric field is exerted at the point of time zero, Ag migration is
observed at time 0.1 s when two nanocrystals started to form. A clear arc-shaped filament is visible
at 2.5 s. When the external biasing is removed at 5.0 s, the filament starts to deform, shrinking to a
round spherical nanocluster implying an interfacial energy driven diffusion mechanism. Reprinted
from [37]
Fig. 8 a Schematic of the standard CAFM experimental setup for HfO 2 (~4 nm)/W (200 nm) /n-Si
stack and the electrical connections for the measurement. b Schematic showing the three different
microstructural regions that the CAFM tip might be probing with very different defect density and
spatial vacancy distribution patterns. Reprinted from [39]
P. Huang et al.
Fig. 7 In situ TEM observation of the threshold switching process of Ag atoms with and without
electrical bias. When the external electric field is exerted at the point of time zero, Ag migration is
observed at time 0.1 s when two nanocrystals started to form. A clear arc-shaped filament is visible
at 2.5 s. When the external biasing is removed at 5.0 s, the filament starts to deform, shrinking to a
round spherical nanocluster implying an interfacial energy driven diffusion mechanism. Reprinted
from [37]
Fig. 8 a Schematic of the standard CAFM experimental setup for HfO 2 (~4 nm)/W (200 nm) /n-Si
stack and the electrical connections for the measurement. b Schematic showing the three different
microstructural regions that the CAFM tip might be probing with very different defect density and
spatial vacancy distribution patterns. Reprinted from [39]