242
S. Goolaup et al.
Fig. 16 a Schematic image of the magnetic nanowire overlapped with metallic strip to generate
the Oersted field. Current is flowing perpendicular to plane, b Simulated Oersted magnetic field
distribution along cross-section of the NiFe due to the current flowing along the Gate, c Magnetic
field strength as a function of position along the NiFe nanowire
2.5 Reconfigurable Logic
By combining the above mentioned two effects: deterministic VDW motion in asymmetric branch and the magnetic gate influence on the TDW charge distribution we
have demonstrated a reconfigurable logic on a single magnetic structure in which one
can carry out all the basic logic functionalities. Figure 17 shows the SEM image of the
device structure. The vertical nanowire (width of 120 nm and length of 6 μm) is placed
100 nm away from the bifurcation to transform the DW from vortex to transverse
configuration with a specific chirality as mentioned in the earlier section. The half
S. Goolaup et al.
Fig. 16 a Schematic image of the magnetic nanowire overlapped with metallic strip to generate
the Oersted field. Current is flowing perpendicular to plane, b Simulated Oersted magnetic field
distribution along cross-section of the NiFe due to the current flowing along the Gate, c Magnetic
field strength as a function of position along the NiFe nanowire
2.5 Reconfigurable Logic
By combining the above mentioned two effects: deterministic VDW motion in asymmetric branch and the magnetic gate influence on the TDW charge distribution we
have demonstrated a reconfigurable logic on a single magnetic structure in which one
can carry out all the basic logic functionalities. Figure 17 shows the SEM image of the
device structure. The vertical nanowire (width of 120 nm and length of 6 μm) is placed
100 nm away from the bifurcation to transform the DW from vortex to transverse
configuration with a specific chirality as mentioned in the earlier section. The half