170
J. Lourembam and J. Huang
17. S. Matsunaga, J. Hayakawa, S. Ikeda et al., Fabrication of a nonvolatile full adder based on logicin-memory architecture using magnetic tunnel junctions. Appl. Phys. Express 1, 0913011–
0913013 (2008). https://doi.org/10.1143/APEX.1.091301
18. F. Ren, D. Markovic, True energy-performance analysis of the MTJ-based logic-in-memory
architecture (1-bit full adder). IEEE Trans. Electron. Devices 57, 1023–1028 (2010). https://
doi.org/10.1109/TED.2010.2043389
19. S. Kanai, F. Matsukura, H. Ohno, Electric-field-induced magnetization switching in
CoFeB/MgO magnetic tunnel junctions with high junction resistance. Appl. Phys. Lett. 108,
192406 (2016). https://doi.org/10.1063/1.4948763
20. P.K. Amiri, J.G. Alzate, X.Q. Cai et al., Electric-field-controlled magnetoelectric RAM:
progress, challenges, and scaling. IEEE Trans. Magn. 51, 1–7 (2015). https://doi.org/10.1109/
TMAG.2015.2443124
21. S. Kanai, Y. Nakatani, M. Yamanouchi et al., Magnetization switching in a CoFeB/MgO
magnetic tunnel junction by combining spin-transfer torque and electric field-effect. Appl.
Phys. Lett. 104, 212406 (2014). https://doi.org/10.1063/1.4880720
22. S. Kanai, Y. Nakatani, M. Yamanouchi et al., In-plane magnetic field dependence of electric
field-induced magnetization switching. Appl. Phys. Lett. 103, 072408 (2013). https://doi.org/
10.1063/1.4818676
23. S. Kanai, M. Yamanouchi, S. Ikeda et al., Electric field-induced magnetization reversal in a
perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. Appl. Phys. Lett. 101, 122403
(2012). https://doi.org/10.1063/1.4753816
24. J. Lourembam, J. Huang, S.T. Lim, E.F. Gerard, Role of CoFeB thickness in electric field
controlled sub-100 nm sized magnetic tunnel junctions. AIP Adv. 8, 055915 (2018). https://
doi.org/10.1063/1.5006368
25. F. Matsukura, Y. Tokura, H. Ohno, Control of magnetism by electric fields. Nat. Nanotechnol.
10, 209–220 (2015). https://doi.org/10.1038/nnano.2015.22
26. T. Nozaki, A. Koziol-Rachwal, W. Skowronski, et al., Large voltage-induced changes in the
perpendicular magnetic anisotropy of an MgO-based tunnel junction with an ultrathin fe layer.
Phys. Rev. Appl. 5, 044006 (2016). https://doi.org/10.1103/PhysRevApplied.5.044006
27. T. Nozaki, Y. Shiota, S. Miwa et al., Electric-field-induced ferromagnetic resonance excitation
in an ultrathin ferromagnetic metal layer. Nat. Phys. 8, 491–496 (2012). https://doi.org/10.
1038/nphys2298
28. T. Nozaki, Y. Shiota, M. Shiraishi et al., Voltage-induced perpendicular magnetic anisotropy
change in magnetic tunnel junctions. Appl. Phys. Lett. 96, 022506 (2010). https://doi.org/10.
1063/1.3279157
29. A. Rajanikanth, T. Hauet, F. Montaigne et al., Magnetic anisotropy modified by electric field in
V/Fe/MgO(001)/Fe epitaxial magnetic tunnel junction. Appl. Phys. Lett. 103, 062402 (2013).
https://doi.org/10.1063/1.4817268
30. T. Seki, M. Kohda, J. Nitta, K. Takanashi, Coercivity change in an FePt thin layer in a Hall
device by voltage application. Appl. Phys. Lett. 98, 212505 (2011). https://doi.org/10.1063/1.
3595318
31. Y. Shiota, S. Miwa, T. Nozaki et al., Pulse voltage-induced dynamic magnetization switching in
magnetic tunneling junctions with high resistance-area product. Appl. Phys. Lett. 101, 102406
(2012). https://doi.org/10.1063/1.4751035
32. Y. Shiota, T. Nozaki, F. Bonell et al., Induction of coherent magnetization switching in a few
atomic layers of FeCo using voltage pulses. Nat. Mater. 11, 39–43 (2012). https://doi.org/10.
1038/nmat3172
33. W.-G. Wang, M. Li, S. Hageman, C.L. Chien, Electric-field-assisted switching in magnetic
tunnel junctions. Nat. Mater. 11, 64–68 (2012). https://doi.org/10.1038/nmat3171
34. W.G. Wang, C.L. Chien, Voltage-induced switching in magnetic tunnel junctions with perpendicular magnetic anisotropy. J. Phys. D Appl. Phys. 46, 074004 (2013). https://doi.org/10.1088/
0022-3727/46/7/074004
35. M. Weisheit, S. Fähler, A. Marty et al., Electric field-induced modification of magnetism in
thin-film ferromagnets. Science 315, 349–351 (2007). https://doi.org/10.1126/science.1136629
J. Lourembam and J. Huang
17. S. Matsunaga, J. Hayakawa, S. Ikeda et al., Fabrication of a nonvolatile full adder based on logicin-memory architecture using magnetic tunnel junctions. Appl. Phys. Express 1, 0913011–
0913013 (2008). https://doi.org/10.1143/APEX.1.091301
18. F. Ren, D. Markovic, True energy-performance analysis of the MTJ-based logic-in-memory
architecture (1-bit full adder). IEEE Trans. Electron. Devices 57, 1023–1028 (2010). https://
doi.org/10.1109/TED.2010.2043389
19. S. Kanai, F. Matsukura, H. Ohno, Electric-field-induced magnetization switching in
CoFeB/MgO magnetic tunnel junctions with high junction resistance. Appl. Phys. Lett. 108,
192406 (2016). https://doi.org/10.1063/1.4948763
20. P.K. Amiri, J.G. Alzate, X.Q. Cai et al., Electric-field-controlled magnetoelectric RAM:
progress, challenges, and scaling. IEEE Trans. Magn. 51, 1–7 (2015). https://doi.org/10.1109/
TMAG.2015.2443124
21. S. Kanai, Y. Nakatani, M. Yamanouchi et al., Magnetization switching in a CoFeB/MgO
magnetic tunnel junction by combining spin-transfer torque and electric field-effect. Appl.
Phys. Lett. 104, 212406 (2014). https://doi.org/10.1063/1.4880720
22. S. Kanai, Y. Nakatani, M. Yamanouchi et al., In-plane magnetic field dependence of electric
field-induced magnetization switching. Appl. Phys. Lett. 103, 072408 (2013). https://doi.org/
10.1063/1.4818676
23. S. Kanai, M. Yamanouchi, S. Ikeda et al., Electric field-induced magnetization reversal in a
perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. Appl. Phys. Lett. 101, 122403
(2012). https://doi.org/10.1063/1.4753816
24. J. Lourembam, J. Huang, S.T. Lim, E.F. Gerard, Role of CoFeB thickness in electric field
controlled sub-100 nm sized magnetic tunnel junctions. AIP Adv. 8, 055915 (2018). https://
doi.org/10.1063/1.5006368
25. F. Matsukura, Y. Tokura, H. Ohno, Control of magnetism by electric fields. Nat. Nanotechnol.
10, 209–220 (2015). https://doi.org/10.1038/nnano.2015.22
26. T. Nozaki, A. Koziol-Rachwal, W. Skowronski, et al., Large voltage-induced changes in the
perpendicular magnetic anisotropy of an MgO-based tunnel junction with an ultrathin fe layer.
Phys. Rev. Appl. 5, 044006 (2016). https://doi.org/10.1103/PhysRevApplied.5.044006
27. T. Nozaki, Y. Shiota, S. Miwa et al., Electric-field-induced ferromagnetic resonance excitation
in an ultrathin ferromagnetic metal layer. Nat. Phys. 8, 491–496 (2012). https://doi.org/10.
1038/nphys2298
28. T. Nozaki, Y. Shiota, M. Shiraishi et al., Voltage-induced perpendicular magnetic anisotropy
change in magnetic tunnel junctions. Appl. Phys. Lett. 96, 022506 (2010). https://doi.org/10.
1063/1.3279157
29. A. Rajanikanth, T. Hauet, F. Montaigne et al., Magnetic anisotropy modified by electric field in
V/Fe/MgO(001)/Fe epitaxial magnetic tunnel junction. Appl. Phys. Lett. 103, 062402 (2013).
https://doi.org/10.1063/1.4817268
30. T. Seki, M. Kohda, J. Nitta, K. Takanashi, Coercivity change in an FePt thin layer in a Hall
device by voltage application. Appl. Phys. Lett. 98, 212505 (2011). https://doi.org/10.1063/1.
3595318
31. Y. Shiota, S. Miwa, T. Nozaki et al., Pulse voltage-induced dynamic magnetization switching in
magnetic tunneling junctions with high resistance-area product. Appl. Phys. Lett. 101, 102406
(2012). https://doi.org/10.1063/1.4751035
32. Y. Shiota, T. Nozaki, F. Bonell et al., Induction of coherent magnetization switching in a few
atomic layers of FeCo using voltage pulses. Nat. Mater. 11, 39–43 (2012). https://doi.org/10.
1038/nmat3172
33. W.-G. Wang, M. Li, S. Hageman, C.L. Chien, Electric-field-assisted switching in magnetic
tunnel junctions. Nat. Mater. 11, 64–68 (2012). https://doi.org/10.1038/nmat3171
34. W.G. Wang, C.L. Chien, Voltage-induced switching in magnetic tunnel junctions with perpendicular magnetic anisotropy. J. Phys. D Appl. Phys. 46, 074004 (2013). https://doi.org/10.1088/
0022-3727/46/7/074004
35. M. Weisheit, S. Fähler, A. Marty et al., Electric field-induced modification of magnetism in
thin-film ferromagnets. Science 315, 349–351 (2007). https://doi.org/10.1126/science.1136629