144
S. Krishnia and W. S. Lew
non-adiabatic spin-transfer torques, spin-Hall effect, Rashba effect, DzyaloshinskiiMoriya interaction drive the domain walls in ferromagnetic and synthetic antiferromagnetic wire. Distinct domain wall dynamics in synthetic antiferromagnetic materials interfaced with heavy metals have shown to be much more efficient. A novel
chiral torque: combination of DMI, SHE and exchange coupling torque, drives the
domain walls at very high speeds in synthetic antiferromagnetic wire. These remarkable current-induced domains wall dynamics in ferromagnetic and synthetic antiferromagnetic wires are not only of great interest on fundamental physics point of view
but also have potential use to design domain wall based memory and logic devices.
References
1. R.C O’ Handley, Modern Magnetic Materials: Principles and Applications (John Wiley Sons,
New York; Chichester Weinheim Brisbane, Singapore, Toronto, 2000)
2. C. Kittel, Introduction to Solid State Physics (2004)
3. B.D. Cullity, C.D. Graham, Introduction to Magnetic Materials, 2nd edn (2009)
4. A. Thiaville, Y. Nakatani, Domain-Wall Dynamics in Nanowiresand Nanostrips (Spin Dyn.
Confin. Magn. Struct, III, 2006)
5. D.A. Allwood, G. Xiong, C.C. Faulkner, D. Atkinson, D. Petit, R.P. Cowburn, Magnetic
domain-wall logic. Science(80-). 309(5741), 1688–1692 (2005)
6. D.A. Allwood et al., Submicrometer ferromagnetic NOT gate and shift register. Science (80-).
296(5575), 2003–2006 (2002)
7. J.H. Franken, H.J.M. Swagten, B. Koopmans, Shift registers based on magnetic domain wall
ratchets with perpendicular anisotropy. Nat. Nanotechnol. 7(8), 499–503 (2012)
8. M. Hayashi, L. Thomas, R. Moriya, C. Rettner, S.S.P. Parkin, Current-controlled magnetic
domain-wall nanowire shift register. Science (80-) (2008)
9. L. O’Brien, D. E. Read, H. T. Zeng, E. R. Lewis, D. Petit, and R. P. Cowburn, “Bidirectional
magnetic nanowire shift register,” Appl. Phys. Lett., vol. 95, no. 23, 2009.
10. S.S.P. Parkin, M. Hayashi, L. Thomas, Magnetic domain-wall racetrack memory. Science
(2008)
11. C.Y. Hung, L. Berger, Exchange forces between domain wall and electric current in permalloy
films of variable thickness. J. Appl. Phys. (1988)
12. L. Berger, Exchange interaction between ferromagnetic domain wall and electric current in
very thin metallic films. J. Appl. Phys (1984)
13. T. Min et al., A study of write margin of spin torque transfer magnetic random access memory
technology. in IEEE Transactions on Magnetics (2010)
14. M. Cubukcu et al., Spin-orbit torque magnetization switching of a three-terminal perpendicular
magnetic tunnel junction. Appl. Phys. Lett. (2014)
15. G. Prenat et al., Ultra-fast and high-reliability SOT-MRAM: from cache replacement to
normally-off computing. IEEE Trans. Multi-Scale Comput. Syst (2016)
16. A.J. Annunziata et al., Racetrack memory cell array with integrated magnetic tunnel junction
readout. in Technical Digest—International Electron Devices Meeting. IEDM (2011)
17. Y. Zhang, W. Zhao, J.O. Klein, D. Ravelsona, C. Chappert, Ultra-high density content addressable memory based on current induced domain wall motion in magnetic track. IEEE Trans.
Magn. (2012)
18. L. Bocklage, F.U. Stein, M. Martens, T. Matsuyama, G. Meier, Time structure of fast domain
wall creation by localized fields in a magnetic nanowire. Appl. Phys. Lett. (2013)
19. S.F. Zhang et al., Highly efficient domain walls injection in perpendicular magnetic anisotropy
nanowire. Sci. Rep. (2016)
S. Krishnia and W. S. Lew
non-adiabatic spin-transfer torques, spin-Hall effect, Rashba effect, DzyaloshinskiiMoriya interaction drive the domain walls in ferromagnetic and synthetic antiferromagnetic wire. Distinct domain wall dynamics in synthetic antiferromagnetic materials interfaced with heavy metals have shown to be much more efficient. A novel
chiral torque: combination of DMI, SHE and exchange coupling torque, drives the
domain walls at very high speeds in synthetic antiferromagnetic wire. These remarkable current-induced domains wall dynamics in ferromagnetic and synthetic antiferromagnetic wires are not only of great interest on fundamental physics point of view
but also have potential use to design domain wall based memory and logic devices.
References
1. R.C O’ Handley, Modern Magnetic Materials: Principles and Applications (John Wiley Sons,
New York; Chichester Weinheim Brisbane, Singapore, Toronto, 2000)
2. C. Kittel, Introduction to Solid State Physics (2004)
3. B.D. Cullity, C.D. Graham, Introduction to Magnetic Materials, 2nd edn (2009)
4. A. Thiaville, Y. Nakatani, Domain-Wall Dynamics in Nanowiresand Nanostrips (Spin Dyn.
Confin. Magn. Struct, III, 2006)
5. D.A. Allwood, G. Xiong, C.C. Faulkner, D. Atkinson, D. Petit, R.P. Cowburn, Magnetic
domain-wall logic. Science(80-). 309(5741), 1688–1692 (2005)
6. D.A. Allwood et al., Submicrometer ferromagnetic NOT gate and shift register. Science (80-).
296(5575), 2003–2006 (2002)
7. J.H. Franken, H.J.M. Swagten, B. Koopmans, Shift registers based on magnetic domain wall
ratchets with perpendicular anisotropy. Nat. Nanotechnol. 7(8), 499–503 (2012)
8. M. Hayashi, L. Thomas, R. Moriya, C. Rettner, S.S.P. Parkin, Current-controlled magnetic
domain-wall nanowire shift register. Science (80-) (2008)
9. L. O’Brien, D. E. Read, H. T. Zeng, E. R. Lewis, D. Petit, and R. P. Cowburn, “Bidirectional
magnetic nanowire shift register,” Appl. Phys. Lett., vol. 95, no. 23, 2009.
10. S.S.P. Parkin, M. Hayashi, L. Thomas, Magnetic domain-wall racetrack memory. Science
(2008)
11. C.Y. Hung, L. Berger, Exchange forces between domain wall and electric current in permalloy
films of variable thickness. J. Appl. Phys. (1988)
12. L. Berger, Exchange interaction between ferromagnetic domain wall and electric current in
very thin metallic films. J. Appl. Phys (1984)
13. T. Min et al., A study of write margin of spin torque transfer magnetic random access memory
technology. in IEEE Transactions on Magnetics (2010)
14. M. Cubukcu et al., Spin-orbit torque magnetization switching of a three-terminal perpendicular
magnetic tunnel junction. Appl. Phys. Lett. (2014)
15. G. Prenat et al., Ultra-fast and high-reliability SOT-MRAM: from cache replacement to
normally-off computing. IEEE Trans. Multi-Scale Comput. Syst (2016)
16. A.J. Annunziata et al., Racetrack memory cell array with integrated magnetic tunnel junction
readout. in Technical Digest—International Electron Devices Meeting. IEDM (2011)
17. Y. Zhang, W. Zhao, J.O. Klein, D. Ravelsona, C. Chappert, Ultra-high density content addressable memory based on current induced domain wall motion in magnetic track. IEEE Trans.
Magn. (2012)
18. L. Bocklage, F.U. Stein, M. Martens, T. Matsuyama, G. Meier, Time structure of fast domain
wall creation by localized fields in a magnetic nanowire. Appl. Phys. Lett. (2013)
19. S.F. Zhang et al., Highly efficient domain walls injection in perpendicular magnetic anisotropy
nanowire. Sci. Rep. (2016)