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S. Krishnia and W. S. Lew
Fig. 2 Domain wall nucleation by passing current through a strip-line to generate Oersted field. The
blue and red arrows represent the magnetization along +z direction and –z direction, respectively.
The wire was initially saturated along –z direction. The current into the strip-line generates Oersted
field and nucleate a domain of reverse magnetization which is along +z direction (red arrows)
data bit. The FBI method also work in the case when the data nanowire has in-plane
magnetization.
Scanning electron microscope (SEM) image of such a device is shown in Fig. 3a.
The film stack of the devices Ta(3)/Pt(3)/Co(0.25)/[Ni(0.5)/Co(0.25)] 4 /Pt(3)/Ta(3),
was sputter deposited on thermally grown SiO 2 substrate at a base pressure of 2
Fig. 3 a Scanning electron microscopy of the fabricated device with external circuit connections.
b Normalized Hall resistance variation of the nanowire when out-of-plane external field is swept
c Field induced domain wall driving. The Hall resistance drops at the de-pinning field [22]
S. Krishnia and W. S. Lew
Fig. 2 Domain wall nucleation by passing current through a strip-line to generate Oersted field. The
blue and red arrows represent the magnetization along +z direction and –z direction, respectively.
The wire was initially saturated along –z direction. The current into the strip-line generates Oersted
field and nucleate a domain of reverse magnetization which is along +z direction (red arrows)
data bit. The FBI method also work in the case when the data nanowire has in-plane
magnetization.
Scanning electron microscope (SEM) image of such a device is shown in Fig. 3a.
The film stack of the devices Ta(3)/Pt(3)/Co(0.25)/[Ni(0.5)/Co(0.25)] 4 /Pt(3)/Ta(3),
was sputter deposited on thermally grown SiO 2 substrate at a base pressure of 2
Fig. 3 a Scanning electron microscopy of the fabricated device with external circuit connections.
b Normalized Hall resistance variation of the nanowire when out-of-plane external field is swept
c Field induced domain wall driving. The Hall resistance drops at the de-pinning field [22]