6.6
6.1
(a)
(b)
(c)
(d)
6.2
(a)
(b)
(c)
(d)
6.3
(a)
(b)
(c)
(d)
6.4
(a)
(b)
(c)
(d)
6.5
(a)
(b)
(c)
(d)
6.6
(a)
(b)
(c)
(d)
6.7
Exercises
Which statement is not true about a semiconductor at room temperature and in the dark?
The band gap of the semiconductor is within a range of 0.5 eV to 3 eV.
In a semiconductor only a few electrons fill the conduction band.
In a semiconductor electrons almost fully fill the valence band.
In a semiconductor the valence band is fully filled with electrons.
What are the ‘free’ carriers in the different electronic bands of a semiconductor?
Electrons in conduction band and holes in valence band.
Holes in conduction band and electrons in valence band.
Both electrons and holes in conduction band when an electric field is applied.
Both electrons and holes in valence band when an electric field is applied.
What is the maximum number of electrons that can occupy the 3p energy state in an atom?
2 electrons.
6 electrons.
Only 1 electron can occupy this state according to the Pauli exclusion principle.
8 electrons.
According to the molecular description of the band gap, which of the following statements are true?
The anti-bonding level is a lower energy state than the bonding level.
The anti-bonding level is a higher energy state than the bonding level.
The closer the two neighbouring atoms making a molecular orbital are together, the smaller the energy
splitting between the bonding and anti-bonding levels.
The bonding state of a molecular orbital represents the conduction band.
In case of p-doping of Si, the energy of the acceptor state…
… is located in the Si bandgap, relatively close to the conduction band.
… is located out of the Si bandgap, relatively close to the conduction band edge.
… is located in the Si bandgap, relatively close to the valence band.
… is located out of the Si bandgap, relatively close to the valence band edge.
Considering Si as the bulk material, which of the dopant materials below can be used in order to achieve n
doping?
Ge.
In.
Ga.
As.
A photon with energy E ph = 1.35 eV is absorbed in a semiconductor creating one electronhole pair. At the same
6.1
(a)
(b)
(c)
(d)
6.2
(a)
(b)
(c)
(d)
6.3
(a)
(b)
(c)
(d)
6.4
(a)
(b)
(c)
(d)
6.5
(a)
(b)
(c)
(d)
6.6
(a)
(b)
(c)
(d)
6.7
Exercises
Which statement is not true about a semiconductor at room temperature and in the dark?
The band gap of the semiconductor is within a range of 0.5 eV to 3 eV.
In a semiconductor only a few electrons fill the conduction band.
In a semiconductor electrons almost fully fill the valence band.
In a semiconductor the valence band is fully filled with electrons.
What are the ‘free’ carriers in the different electronic bands of a semiconductor?
Electrons in conduction band and holes in valence band.
Holes in conduction band and electrons in valence band.
Both electrons and holes in conduction band when an electric field is applied.
Both electrons and holes in valence band when an electric field is applied.
What is the maximum number of electrons that can occupy the 3p energy state in an atom?
2 electrons.
6 electrons.
Only 1 electron can occupy this state according to the Pauli exclusion principle.
8 electrons.
According to the molecular description of the band gap, which of the following statements are true?
The anti-bonding level is a lower energy state than the bonding level.
The anti-bonding level is a higher energy state than the bonding level.
The closer the two neighbouring atoms making a molecular orbital are together, the smaller the energy
splitting between the bonding and anti-bonding levels.
The bonding state of a molecular orbital represents the conduction band.
In case of p-doping of Si, the energy of the acceptor state…
… is located in the Si bandgap, relatively close to the conduction band.
… is located out of the Si bandgap, relatively close to the conduction band edge.
… is located in the Si bandgap, relatively close to the valence band.
… is located out of the Si bandgap, relatively close to the valence band edge.
Considering Si as the bulk material, which of the dopant materials below can be used in order to achieve n
doping?
Ge.
In.
Ga.
As.
A photon with energy E ph = 1.35 eV is absorbed in a semiconductor creating one electronhole pair. At the same