coefficient, 47
device, 192
length, 47, 71, 94, 97, 112, 138, 191, 403
doping, 50–51, 55–57, 189, 198
gradient, 387
drift, 47, 58–59, 93, 173
device, 192
emission coefficient, 73
equilibrium, 52, 55
II-IV, 203
intrinsic, 49, 54
junction, 47, 83–105, 295
breakdown, 229
emitter, 160
forward bias, 92, 112, 401
hetero-, 83, 97–100, 172, 201, 204, 207
homo-, 83–97, 401–407
localized, 172
metal-semiconductor, 83, 100–105, 163, 164
ohmic, 100, 104–105
p-i-n, 191–192
reverse bias, 92
step, 87
tunnel, 184–185
low-level injection, 70, 75, 77, 401, 402, 407
MOSFET, 295
non-equilibrium, 79–80
nondegenerate, 54